Abstract: Provided are an array substrate, a display panel and a display device. The array substrate includes a first base; a switch array layer including transistors; a pixel electrode layer including pixel electrodes, each of which being connected to a drain electrode of a pixel electrode through a via; and a color resist array layer including color resists, each of which includes a first edge and a second edge opposite to each other in a first direction. First and second recesses are formed at first and second edges; for two color resists adjacent in the first direction, the first recess of one color resist is opposite to the second recess of the other color resist; and projections of the first and second recesses overlap at least partially with a projection of the via in a second direction, and the second direction is parallel to a thickness direction of the array substrate.

Abstract: Provided are an array substrate, a display panel, and a display device. The array substrate includes a base substrate, a thin-film transistor disposed on one side of the base substrate, a pixel electrode, and at least two color resist layers disposed between the TFT and the pixel electrode. A medium layer is disposed between any two adjacent color resist layers. The pixel electrode is electrically connected to a first electrode of the thin-film transistor through a via.

Abstract: Provided display panel includes color film substrate, array substrate disposed opposite to color film substrate, first color resist layer disposed on color film substrate and including first-type color resist blocks, second color resist layer disposed on array substrate, and first metal wires disposed on array substrate. Second color resist layer is disposed on side of first metal wires facing color film substrate. First metal wires extend along first direction. Second color resist layer includes second-type color resist blocks. Color of second-type color resist blocks different from color of first-type color resist blocks. Each first-type color resist block and each second-type color resist block are disposed alternatively along second direction.

Abstract: Provided display panel includes color film substrate, array substrate disposed opposite to color film substrate, first color resist layer disposed on color film substrate and including first-type color resist blocks, second color resist layer disposed on array substrate, and first metal wires disposed on array substrate. Second color resist layer is disposed on side of first metal wires facing color film substrate. First metal wires extend along first direction. Second color resist layer includes second-type color resist blocks. Color of second-type color resist blocks different from color of first-type color resist blocks. Each first-type color resist block and each second-type color resist block are disposed alternatively along second direction.

Abstract: Provided are an array substrate, a display panel and a display device. The array substrate includes a first base: a switch array layer including transistors: a pixel electrode layer including pixel electrodes, each of which being connected to a drain electrode of a pixel electrode through a via; and a color resist array layer including color resists, each of which includes a first edge and a second edge opposite to each other in a first direction. First and second recesses are formed at first and second edges; for two color resists adjacent in the first direction, the first recess of one color resist is opposite to the second recess of the other color resist; and projections of the first and second recesses overlap at least partially with a projection of the via in a second direction, and the second direction is parallel to a thickness direction of the array substrate.

Abstract: Provided are an array substrate, a display panel, and a display device. The array substrate includes a base substrate, a thin-film transistor disposed on one side of the base substrate, a pixel electrode, and at least two color resist layers disposed between the TFT and the pixel electrode. A medium layer is disposed between any two adjacent color resist layers. The pixel electrode is electrically connected to a first electrode of the thin-film transistor through a via.

Abstract: Embodiments of the present disclosure provide a low temperature poly-silicon display panel, a manufacturing method thereof, and a liquid crystal device, which relate to the display technology and improve the light leakage of the metal. The low temperature poly-silicon display panel includes an array substrate and an alignment substrate that are opposite to each other, and liquid crystals filled between the array substrate and the alignment substrate. The array substrate includes a base substrate, and a low temperature poly-silicon active layer, a gate layer, and a source-drain layer are arranged on the base substrate. The low temperature poly-silicon display panel further includes a color filter layer disposed on the array substrate and located on a side of the source-drain layer facing away from the base substrate, and a light shielding layer configured to define an opening region of the low temperature poly-silicon display panel.

Abstract: A medical hydrogel composition, a medical hydrogel, a preparation method therefore and an application thereof, and a medical hydrogel kit. The medical hydrogel composition comprises a first component and a second component; the first component comprises polylysine and polyethylene imine; the second component comprises one or more of 4-arm-polyethylene glycol-succinimidyl glutarate, 4-arm-polyethylene glycol-succinimidyl succinate, and 4-arm-polyethylene glycol-succinimidyl carbonate; the degree of polymerization of the polylysine is 20 or more. The medical hydrogel is formed by reacting the first component with the second component of the medical hydrogel composition. The medical hydrogel kit comprises the medical hydrogel composition and a buffer solution used for dissolving the components of the medical hydrogel composition. The medical hydrogel has a degree of swelling of ?10%-50%, and can be applied in narrow parts where cranial, spinal, and peripheral nerves are densely distributed.

Abstract: Embodiments of the present disclosure provide a display device and relate to the display technology field. The display device includes: a first base substrate, a plurality of pixels arranged in an array, a light source, configured to emit visible light, at least one photoluminescence unit, configured to convert the visible light into invisible light, and at least one light sensing element, configured to perform fingerprint recognition according to the invisible light reflected by a touch body. The display device implements the fingerprint recognition with the invisible light, and then the influence on the fingerprint recognition caused by the visible light from the external environment or backlight source and irradiated onto the light sensing element is avoided, thereby improving a fingerprint recognition precision.

Abstract: Embodiments of the present disclosure provide a display device and relate to the display technology field. The display device includes: a first base substrate, a plurality of pixels arranged in an array, a light source, configured to emit visible light, at least one photoluminescence unit, configured to convert the visible light into invisible light, and at least one light sensing element, configured to perform fingerprint recognition according to the invisible light reflected by a touch body. The display device implements the fingerprint recognition with the invisible light, and then the influence on the fingerprint recognition caused by the visible light from the external environment or backlight source and irradiated onto the light sensing element is avoided, thereby improving a fingerprint recognition precision.

Abstract: A medical hydrogel composition, a medical hydrogel, a preparation method therefore and an application thereof, and a medical hydrogel kit. The medical hydrogel composition comprises a first component and a second component; the first component comprises polylysine and polyethylene imine; the second component comprises one or more of 4-arm-polyethylene glycol-succinimidyl glutarate, 4-arm-polyethylene glycol-succinimidyl succinate, and 4-arm-polyethylene glycol-succinimidyl carbonate; the degree of polymerization of the polylysine is 20 or more. The medical hydrogel is formed by reacting the first component with the second component of the medical hydrogel composition. The medical hydrogel kit comprises the medical hydrogel composition and a buffer solution used for dissolving the components of the medical hydrogel composition. The medical hydrogel has a degree of swelling of ?10%-50%, and can be applied in narrow parts where cranial, spinal, and peripheral nerves are densely distributed.

Abstract: A high pixel density intraoral x-ray imaging sensor includes a direct conversion, fully depleted silicon detector bump bonded to a readout CMOS substrate by cu-pillar bump bonds.

Abstract: A high pixel density intraoral x-ray imaging sensor includes a direct conversion, fully depleted silicon detector bump bonded to a readout CMOS substrate by cu-pillar bump bonds.

Abstract: A high pixel density intraoral x-ray imaging sensor includes a direct conversion, fully depleted silicon detector bump bonded to a readout CMOS substrate by cu-pillar bump bonds.

Abstract: A high pixel density intraoral x-ray imaging sensor includes a direct conversion, fully depleted silicon detector bump bonded to a readout CMOS substrate by capillary bump bonds.

Abstract: A high pixel density intraoral x-ray imaging sensor includes a direct conversion, fully depleted silicon detector bump bonded to a readout CMOS substrate by cu-pillar bump bonds.

Abstract: A method of fabricating a compound semiconductor vertical LED is provided. A first growth substrate capable of supporting compound semiconductor epitaxial growth thereon is provided. One or more epitaxial layers of compound semiconductor material such as GaN or InGaN is formed on the first growth substrate to create a portion of a vertical light emitting diode. Plural trenches are formed in the compound semiconductor material. Passivating material is deposited in one or more trenches. A hard material is at least partially deposited in the trenches and optionally on portions of the compound semiconductor material. The hard material has a hardness greater than the hardness of the compound semiconductor. A metal layer is deposited over the compound semiconductor material followed by metal planarization. A new host substrate is bonded to the metal layer and the first growth substrate is removed. Dicing is used to form individual LED devices.

Abstract: A method of making quasi-vertical light emitting devices includes growing semiconductor layers on a growth substrate and etching the semiconductor layers to produce device isolation trenches forming separable semiconductor devices and holes. Blind holes are drilled in the substrate at the location of each of the holes in the semiconductor layers. The drilling of the blind holes defines blind hole walls and a blind hole end in each of the blind holes. N-semiconductor metal is deposited in each of the blind holes. An n-electrode contact is formed in each of the blind holes by plating each of the blind holes with an n-electrode metal connected to the n-semiconductor metal. The substrate is thinned to expose the n-electrode metal as an n-electrode. Bonding metal is deposited to the n-electrode for packaging.

Abstract: A method of fabricating a compound semiconductor vertical LED is provided. A first growth substrate capable of supporting compound semiconductor epitaxial growth thereon is provided. One or more epitaxial layers of compound semiconductor material such as GaN or InGaN is formed on the first growth substrate to create a portion of a vertical light emitting diode. Plural trenches are formed in the compound semiconductor material. Passivating material is deposited in one or more trenches. A hard material is at least partially deposited in the trenches and optionally on portions of the compound semiconductor material. The hard material has a hardness greater than the hardness of the compound semiconductor. A metal layer is deposited over the compound semiconductor material followed by metal planarization. A new host substrate is bonded to the metal layer and the first growth substrate is removed. Dicing is used to form individual LED devices.

Abstract: A method of making quasi-vertical light emitting devices includes growing semiconductor layers on a growth substrate and etching the semiconductor layers to produce device isolation trenches forming separable semiconductor devices and holes. Blind holes are drilled in the substrate at the location of each of the holes in the semiconductor layers. The drilling of the blind holes defines blind hole walls and a blind hole end in each of the blind holes. N-semiconductor metal is deposited in each of the blind holes. An n-electrode contact is formed in each of the blind holes by plating each of the blind holes with an n-electrode metal connected to the n-semiconductor metal. The substrate is thinned to expose the n-electrode metal as an n-electrode. Bonding metal is deposited to the n-electrode for packaging.