Patents by Inventor Li Mingfu

Li Mingfu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
    Patent number: 7504329
    Abstract: Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
    Type: Grant
    Filed: May 11, 2006
    Date of Patent: March 17, 2009
    Assignees: Interuniversitair Microelektronica Centrum (IMEC), National University of Singapore (NUS), Texas Instruments Incorporated
    Inventors: HongYu Yu, Chen JingDe, Li Mingfu, Dim-Lee Kwong, Serge Biesemans, Jorge Adrian Kittl
  • LOW WORK FUNCTION METAL ALLOY
    Publication number: 20060286802
    Abstract: Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.
    Type: Application
    Filed: May 11, 2006
    Publication date: December 21, 2006
    Inventors: HongYu Yu, Chen JingDe, Li Mingfu, Dim-Lee Kwong, Serge Biesemans, Jorge Kittl