Abstract: Various embodiments include protection layers for a transistor and methods of forming the same. In an embodiment, a method includes: exposing a semiconductor nanostructure, a dummy nanostructure, and an isolation region by removing a dummy gate; increasing a deposition selectivity between a top surface of the semiconductor nanostructure and a top surface of the isolation region relative a selective deposition process; depositing a protection layer on the top surface of the isolation region by performing the selective deposition process; removing the dummy nanostructure by selectively etching a dummy material of the dummy nanostructure at a faster rate than a protection material of the protection layer; and forming a gate structure around the semiconductor nanostructure.

Abstract: A chef robot device includes a temperature sensing module, am image recognizing module, an odor detecting module, a central processing unit (CPU), and a robotic arm module. The temperature sensing module, the image recognizing module, and the odor detecting module respectively sense a temperature, a color, and an odor of foods in a cooker, and transmit a temperature sensing signal, a food color depth signal, and an odor concentration signal to the CPU. The CPU outputs motion instructions to the robotic arm module according to food statuses and a trajectory planning model. The robotic arm module performs motions for cooking the foods according to the motion instructions. The chef robot device can improve a food-cooking quality by training, and can resolve a problem of lacking experienced chefs.

Abstract: The invention relates to a light emitting diode, which comprises a substrate and a semiconductor epitaxy structure. The semiconductor epitaxial structure is disposed on the substrate. The semiconductor epitaxial structure comprises semiconductor composite layers and a plurality of current spreading layers which are disposed among the semiconductor composite layers. The doping concentrations of the upper and lower adjacent current spreading layers are alternately high and low.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The method includes forming first channel structures, second channel structures, and third channel structures. The method also includes forming gate dielectric layers surrounding the first channel structures, the second channel structures, and the third channel structures and forming dipole layers over the gate dielectric layers. The method also includes forming a dummy material in a first space between the first and the second channel structures and in a second space between the second and the third channel structures and removing first portions of the dummy material. The method also includes implanting first dopants in the dummy material in the first space and removing second portions of the dummy material in the first space and the second space. The method also includes removing the dipole layers in the top device region and completely removing the dummy material.

Abstract: A method includes depositing a first work function layer over a first and second gate trench. The method includes depositing a second work function layer over the first work function layer. The method includes etching the second work function layer in the first gate trench while covering the second work function layer in the second gate trench, causing the first work function layer in the first gate trench to contain metal dopants that are left from the second work function layer etched in the first gate trench. The method includes forming a first active gate structure and second active gate structure, which include the first work function layer and the metal dopants left from the second work function layer in the first gate trench, and the first work function layer and no metal dopants left behind from the second work function layer, respectively.

Abstract: Embodiments include mixed complementary field effect and unipolar transistors and methods of forming the same. In an embodiment, a structure includes: a first semiconductor nanostructure; a second semiconductor nanostructure; a first isolation structure interposed between the first semiconductor nanostructure and the second semiconductor nanostructure; a first source/drain region extending laterally from an end of the first semiconductor nanostructure, the first source/drain region having a first conductivity type; a second source/drain region extending laterally from an end of the second semiconductor nanostructure, the second source/drain region having the first conductivity type, the second source/drain region aligned vertically with the first source/drain region; and a first gate structure surrounding the first semiconductor nanostructure and the second semiconductor nanostructure.

Abstract: Embodiments of the present disclosure provide semiconductor device structures and methods of forming the same. The structure includes a source/drain region disposed over a substrate, a gate electrode layer disposed over the substrate, a first gate spacer disposed between the gate electrode layer and the source/drain region, and a dielectric spacer disposed between the gate electrode layer and the source/drain region. A first portion of the dielectric spacer is in contact with a first portion of the first gate spacer. The structure further includes a sacrificial layer disposed between a second portion of the first gate spacer and a second portion of the dielectric spacer.

Abstract: Multiple voltage threshold integrated circuit structures with local layout effect tuning, and methods of fabricating multiple voltage threshold integrated circuit structures with local layout effect tuning, are described. For example, an integrated circuit structure includes a first fin structure or vertical arrangement of horizontal nanowires. A second fin structure or vertical arrangement of horizontal nanowires is laterally spaced apart from the first fin structure or vertical arrangement of horizontal nanowires. An N-type gate structure is over the first fin structure or vertical arrangement of horizontal nanowires. A P-type gate structure is over the second fin structure or vertical arrangement of horizontal nanowires, the P-type gate structure in contact with the N-type gate structure with a PN boundary between the P-type gate structure and the N-type gate structure.

Abstract: Techniques and mechanisms for forming a gate dielectric structure and source or drain (S/D) structures on a monolayer channel structure of a transistor. In an embodiment, the channel structure comprises a two-dimensional (2D) layer of a transition metal dichalcogenide (TMD) material. During fabrication of the transistor structure, a layer of a dielectric material is deposited on the channel structure, wherein the dielectric material is suitable to provide a reaction, with a plasma, to produce a conductive material. While a first portion of the dielectric material is covered by a patterned structure, a second portion of the dielectric material is exposed to a plasma treatment to form a source or dielectric (S/D) electrode structure that adjoins the first portion. In another embodiment, the dielectric material is an oxide of a Group V-VI transition metal.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A pulse pressure measuring apparatus including a plurality of pressing elements, a plurality of pressure sensors, and a processing unit is provided. The pressing elements are used to press the site to be measured, and each pressing element has a position coordinate Pi (i=1, 2, 3 . . . ). The pressure sensors are configured to respectively measure pressure on the pressing elements to generate measured values of pressure intensity Ii (i=1, 2, 3 . . . ) at the position coordinates Pi (i=1, 2, 3 . . . ). The processing unit utilizes the position coordinates Pi (i=1, 2, 3 . . . ) and the measured values of pressure intensity Ii (i=1, 2, 3 . . . ) to determine the blood vessel locus.

Abstract: Present invention teaches the method of using a keratin hydrolysis peptide (“KHP”) solution to enhance the healthy growth and production yield of wheat crops. By selectively choosing specific weights of feathers and water, and treating the mixture to a high-temperature high-pressure hydrolysis process, the resulting solution is confirmed to contain at least 253 peptides and, at early growth stage, applied to the leaf surface or infused into the soil around the crops. Optionally, the KHP solution can be diluted by water, as taught in the specification, before administering as taught herein.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: Antigen binding molecules (ABMs) comprising Fab domains in non-native configurations, ABM conjugates comprising the ABMs and cytotoxic or cytostatic agents, pharmaceutical compositions containing the ABMs and ABM conjugates, methods of using the ABMs, ABM conjugates and pharmaceutical compositions for treating cancer, nucleic acids encoding the ABMs, cells engineered to express the ABMs, and methods of producing ABMs.

Abstract: The present invention relates to chimeric papilloma virus L1 proteins and polynucleotides encoding thereof, and also to HPV virus-like particles and the preparation methods thereof. Said chimeric papilloma virus L1 protein comprises an N-terminal fragment derived from L1 protein of the first papilloma virus type, said N-terminal fragment maintains the immunogenicity of the L1 protein of the corresponding type of HPV; and a C-terminal fragment derived from L1 protein of the second papilloma virus type, said L1 protein of the second papilloma virus type has a better expression level and a better solubility compared to the L1 proteins of other HPV types; wherein said chimeric papilloma virus L1 proteins have the immunogenicity of the L1 proteins of the corresponding HPV types. Said chimeric papilloma virus L proteins have better expression amount and solubility for mass production of vaccines.

Abstract: This disclosure is directed to a pharmaceutical composition for treating or preventing a disease. The pharmaceutical composition can comprise a polymer-drug nanoaggregate having a polymer and at least one bioactive agent that can comprise STING polypeptide, a nucleic acid encoding said STING polypeptide, a STING inhibitor, a STING activator, a STING agonist, a STING antagonist, a STING modulating molecule, or a combination thereof. The pharmaceutical composition can be a vaccine or an adjuvant for a vaccine. This disclosure is also directed to a method for treating or preventing a disease using the pharmaceutical composition. The disease can include infectious diseases caused by viruses or other pathogens, for example, influenza, rabies, or respiratory illnesses such as severe acute respiratory syndrome (SARS) caused by coronaviruses, such as MERS-CoV, SARS-CoV, and Coronavirus Disease 2019 (COVID-19) caused by the virus SARS-CoV-2 and its variants.

Abstract: The present disclosure provides a trenchless multi-stage pipe cleaning device and method combining an artificial tornado and dagger-like mechanical sand. The trenchless multi-stage pipe cleaning device includes a primary pipe cleaning device and a secondary pipe cleaning device that are connected. An outer wall of the pipe cleaning device is provided with multiple air inlet joint pipes evenly distributed in a circumferential direction. The air inlet joint pipes are connected to an air compressor. Each of the air outlet joints is connected to a nozzle. The primary pipe cleaning device is connected to a vibrating screen. The trenchless multi-stage pipe cleaning device further includes a back-end sewage discharge device.

Abstract: Provided is an isolated nucleic acid molecule comprising a NKp30 transmembrane domain, and a chimeric antigen receptor comprising the same. The isolated nucleic acid molecule comprising a NKp30 transmembrane domain comprises nucleic acid sequences encoding (a) an extracellular antigen binding domain, comprising a heavy chain variable region; (b) a hinge domain; (c) a NKp30 transmembrane domain; and (d) a NKp30 cytoplasmic domain. By introducing nucleic acid sequences of the NKp30 transmembrane domain and the NKp30 cytoplasmic domain in combination with the extracellular antigen binding domain into a T cell, the resulting CAR-T cell is a multi-chain CAR-T cell with a NKp30 receptor complex. Consequently, the resulting CAR-T cell forms stable immune synapses with cancer cells and exhibits excellent cytotoxicity against cancer cells.

Abstract: An ingot splitting method and an ingot splitting apparatus are provided. The ingot splitting method includes the following steps. A laser provided from a laser source is focused with a focusing lens group on a plane to be split of an ingot, and a focus point of the laser is used to scan the plane to be split. An opposing first side and second side of the ingot are fixed with a chuck table and an ultrasonic source. The plane to be split is located between the first side and the second side. A pulling force is applied to the second side in a direction away from the ingot with a tensioner, and ultrasonic waves are applied to vibrate the ingot with the ultrasonic source simultaneously, so that the ingot is divided into two parts from the plane to be split.

Abstract: A buffering device for a filter bottle. The buffering device is disposed on a body of the filter bottle and has a sidewall, a top, a bottom, and a chamber. The top of the buffering device is moveable up and down along the sidewall of the buffering device. The chamber is formed between the sidewall, the top, and the bottom of the buffering device, and does not communicate with an interior of the filter bottle. The chamber communicates with an exterior via an air gap for air exchange. A filter bottle having the buffering device can provide a function of anti-water-hammer, can reduce a risk of leakage at a connection between the filter bottle and a valve head, and can provide an anti-freeze effect to reduce a risk of rupture of the filter bottle.