Abstract: A source driver includes a first drive channel circuit, a voltage controller and a first programmable voltage buffer unit. The first drive channel circuit receives a first pixel data and a first reference voltage group, for driving the display device. The voltage controller receives a voltage command during a line data transmitting period, a horizontal blanking period or a vertical blanking period for generating a first reference voltage configuration data. The first programmable voltage buffer unit is coupled to the voltage controller and the first drive channel circuit, and receives the first reference voltage configuration data for applying the first reference voltage group to the first drive channel circuit. Furthermore, a method for driving a display device is also provided.

Abstract: This invention generally relates to a design and method for developing novel anti-tumor/cancer drugs, vaccines and therapies, using microRNA (miRNA) and its shRNA homologues/derivatives. More particularly, the present invention relates to the use of a nucleic acid composition capable of expressing mir-302-like gene silencing effectors upon delivery into human cells and then silencing mir-302-targeted cell cycle regulators and oncogenes, resulting in an inhibitory effect on tumor/cancer cell growth and metastasis. Mir-302 is the most predominant miRNA found in human embryonic stem (hES) and induced pluripotent stem (iPS) cells, yet its function is unclear. The present invention establishes that in humans mir-302 concurrently suppressed both cyclin-E-CDK2 and cyclin-D-CDK4/6 pathways and eventually blocked over 70% of the G1-S transition.

Abstract: A ternary magnetic braze alloy and method for applying the braze alloy in areas having limited access. The magnetic braze alloy is a nickel-based braze alloy from the perminvar region of the Ni, Fe, Co phase diagram. The braze alloy includes, by weight percent 8-45% Fe, 0-78% Co, 2.0-4.0% of an element selected from the group consisting of B and Si and combinations thereof, and the balance Ni. The nickel-based braze alloy is characterized by a brazing temperature in the range of 1850-2100° F. The nickel-based braze alloy is magnetic below its Curie temperature.

Abstract: Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.

Abstract: A generator for harvesting energy from water in motion includes a sheet of a hydrophobic material, having a first side and an opposite second side, that is triboelectrically more negative than water. A first electrode sheet is disposed on the second side of the sheet of a hydrophobic material. A second electrode sheet is disposed on the second side of the sheet of a hydrophobic material and is spaced apart from the first electrode sheet. Movement of the water across the first side induces an electrical potential imbalance between the first electrode sheet and the second electrode sheet.

Abstract: A group III-V transistor device employing a novel layout for isolating and/or defining the active region is provided. A group III-V heterojunction is arranged over or within a substrate, and an inner drain electrode is arranged over the group III-V heterojunction. A gate has a ring shape and is arranged over the group III-V heterojunction around the inner drain electrode. An outer source electrode has a ring-shaped region arranged over the group III-V heterojunction around the gate. A method for manufacturing the group III-V transistor device is also provided.

Abstract: According to one embodiment of the present invention, a system inserts data into a database object. The system associates the database object with a parameter specifying materialization of data for the database object. The system inserts data into the database object and materializes the data in accordance with the parameter to provide access to the data from the database object, wherein the parameter specifies a portion of the data to be materialized upon insertion. Embodiments of the present invention further include a method and computer program product for inserting data into a database object in substantially the same manners described above.

Abstract: Among other things, one or more image sensors and techniques for forming such image sensors are provided. An image sensor comprises a photodiode array configured to detect light. The image sensor comprises a calibration region configured to detect a color level for image reproduction, such as a black calibration region configured to detect a black level for an image detected by the photodiode array. The image sensor comprises a dielectric film that is formed over the photodiode array and the calibration region. The dielectric film is configured to balance stress between the photodiode and the calibration region in order to improve accuracy of the calibration region.

Abstract: An energy generating device utilizing mechanical vibration power is provided. The energy generating device includes a first body for reciprocating according to vibration motions; an anchored second body; a rack coupled to one of the first body and the anchored second body; a gear assembly engaged with the rack and coupled to the other one of the first body and the anchored second body such that the gear assembly drives a generator via a rotational movement in a single direction according to each of upward and downward movement of the rack relative to the gear assembly; and the generator engaged with the gear assembly for receiving the rotational movement output from the gear assembly and outputting a direct current according to the rotational input from the gear assembly.

Abstract: A semiconductor device includes semiconductor fins on semiconductor strips on a substrate. The semiconductor fins are parallel to each other. A gate stack is over the semiconductor fins, and a drain epitaxy semiconductor region is disposed laterally from a side of the gate stack and on the semiconductor strips. A first dielectric layer is over the substrate, and the first dielectric layer has a first metal layer. A second dielectric layer is over the first dielectric layer, and the second dielectric layer has a second metal layer. Vias extend from the second metal layer and through the first dielectric layer, and the vias are electrically coupled to the drain epitaxy semiconductor region.

Abstract: Zener diode structures and related fabrication methods and semiconductor devices are provided. An exemplary semiconductor device includes first and second Zener diode structures. The first Zener diode structure includes a first region, a second region that is adjacent to the first region, and a third region adjacent to the first region and the second region to provide a junction that is configured to influence a first reverse breakdown voltage of a junction between the first region and the second region. The second Zener diode structure includes a fourth region, a fifth region that is adjacent to the fourth region, and a sixth region adjacent to the fourth region and the fifth region to provide a junction configured to influence a second reverse breakdown voltage of a junction between the fourth region and the fifth region, wherein the second reverse breakdown voltage and the first reverse breakdown voltage are different.

Abstract: Approaches for satellite data transmissions are provided, which accommodate for periodic signal blockages without packet loss. A data stream is segmented into packets for wireless transmission, wherein the transmission is subject to a periodic blockage, wherein the periodic blockage comprises two blockages occurring within a time period, and each blockage is of a respective duration and recurs at regular intervals based on the time period. A forward error correction outer code is applied to the packets for recovery of data erasures due to the periodic blockage, wherein the application of the outer code comprises applying an error correction code to each of the packets to generate a respective codeblock. Each codeblock is interleaved to prevent erasure of consecutive parity bits within the codeblock. The encoded and interleaved codeblocks are transmitted over a wireless channel, wherein a number of data erasures occur within each codeblock due to the periodic blockage.

Abstract: A semiconductor device includes a substrate, a bond pad above the substrate, a guard ring above the substrate, and an alignment mark above the substrate, between the bond pad and the guard ring. The device may include a passivation layer on the substrate, a polymer layer, a post-passivation interconnect (PPI) layer in contact with the bond pad, and a connector on the PPI layer, wherein the connector is between the bond pad and the guard ring, and the alignment mark is between the connector and the guard ring. The alignment mark may be at the PPI layer. There may be multiple alignment marks at different layers. There may be multiple alignment marks for the device around the corners or at the edges of an area surrounded by the guard ring.

Abstract: A method for pyrolyzing organic matter in a subterranean formation includes powering a first generation in situ resistive heating element within an aggregate electrically conductive zone at least partially in a first region of the subterranean formation by transmitting an electrical current between a first electrode pair in electrical contact with the first generation in situ resistive heating element to pyrolyze a second region of the subterranean formation, adjacent the first region, to expand the aggregate electrically conductive zone into the second region, wherein the expanding creates a second generation in situ resistive heating element within the second region and powering the second generation in situ resistive heating element by transmitting an electrical current between a second electrode pair in electrical contact with the second generation in situ resistive heating element to generate heat with the second generation in situ resistive heating element within the second region.

Abstract: An optical fiber connector includes a housing, two coupling lenses, a RJ45 plug, a holder, and two optical fibers. The housing defines a receiving cavity with a bottom surface and two through holes. The coupling lens is positioned on the bottom surface and covers the through holes. The RJ45 plug is received in the receiving cavity and defines a receiving recess. The holder is received in the receiving recess and defines two receiving through holes. The optical fibers are received in the receiving through holes and optically aligned with the coupling lenses.

Abstract: An apparatus includes a first capacitor, an inductor coupled to the first capacitor, and a second capacitor coupled to the inductor. The second capacitor is coupled to a first output of a differential amplifier.

Abstract: An electromagnetic shielding composite includes a polymer and a carbon nanotube film structure. The carbon nanotube structure includes a number of carbon nanotubes disposed in the polymer. The number of carbon nanotubes are parallel with each other.

Abstract: Embodiments of the present disclosure are directed toward techniques and configurations for an optical device having a semiconductor layer to propagate light and a mirror disposed inside the semiconductor layer and having echelle grating reflective surface to substantially totally internally reflect the propagating light inputted by one or more input waveguides, to be received by one or more output waveguides. The waveguides may be disposed in the semiconductor layer under a determined angle relative to the mirror reflective surface. The determined angle may be equal to or greater than a total internal reflection angle corresponding to the interface, to provide substantially total internal reflection of light by the mirror. The mirror may be formed by an interface of the semiconductor layer comprising the mirror reflective surface and another medium filling the mirror, such as a dielectric. Other embodiments may be described and/or claimed.

Abstract: An embodiment is a method. A first III-V compound semiconductor is epitaxially grown in a trench on a substrate, and the epitaxial growth is performed in a chamber. The first III-V compound semiconductor has a first surface comprising a facet. After the epitaxial growth, the first surface of the first III-V compound semiconductor is etched to form an altered surface of the first III-V compound semiconductor. Etching the first surface is performed in the chamber in situ. A second III-V compound semiconductor is epitaxially grown on the altered surface of the first III-V compound semiconductor. The epitaxial growth of the first III-V compound semiconductor may be performed in a MOCVD chamber, and the etch may use an HCl gas. Structures resulting from methods are also disclosed.