Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) chip comprising a front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV), as well as a method for forming the IC chip. In some embodiments, a semiconductor layer overlies a substrate. The semiconductor layer may, for example, be or comprise a group III-V semiconductor and/or some other suitable semiconductor(s). A semiconductor device is on the semiconductor layer, and a FEOL layer overlies the semiconductor device. The FEOL TSV extends through the FEOL layer and the semiconductor layer to the substrate at a periphery of the IC chip. An intermetal dielectric (IMD) layer overlies the FEOL TSV and the FEOL layer, and an alternating stack of wires and vias is in the IMD layer.

Abstract: A semiconductor structure includes: a channel layer; an active layer over the channel layer, wherein the active layer is configured to form a two-dimensional electron gas (2DEG) to be formed in the channel layer along an interface between the channel layer and the active layer; a gate electrode over a top surface of the active layer; and a source/drain electrode over the top surface of the active layer; wherein the active layer includes a first layer and a second layer sequentially disposed therein from the top surface to a bottom surface of the active layer, and the first layer possesses a higher aluminum (Al) atom concentration compared to the second layer. An HEMT structure and an associated method are also disclosed.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) chip comprising a front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV), as well as a method for forming the IC chip. In some embodiments, a semiconductor layer overlies a substrate. The semiconductor layer may, for example, be or comprise a group III-V semiconductor and/or some other suitable semiconductor(s). A semiconductor device is on the semiconductor layer, and a FEOL layer overlies the semiconductor device. The FEOL TSV extends through the FEOL layer and the semiconductor layer to the substrate at a periphery of the IC chip. An intermetal dielectric (IMD) layer overlies the FEOL TSV and the FEOL layer, and an alternating stack of wires and vias is in the IMD layer.

Abstract: The present invention provides fatty acid amide hydrolase inhibitors, solid forms thereof, compositions thereof, and methods of making and using the same.

Abstract: The present invention provides fatty acid amide hydrolase inhibitors, solid forms thereof, compositions thereof, and methods of making and using the same.

Abstract: The invention is directed to a method to reduce a C—C double bond of an enone of a steroidal compound to produce a mixture of ? ketone product and ? ketone product, comprising treating a solution or suspension of the steroidal compound in a solvent with hydrogen gas in the presence of a catalyst and a substituted pyridine.

Abstract: The present invention provides fatty acid amide hydrolase inhibitors, solid forms thereof, compositions thereof, and methods of making and using the same.

Abstract: The present invention provides fatty acid amide hydrolase inhibitors, solid forms thereof, compositions thereof, and methods of making and using the same.

Abstract: The invention is directed to a method to reduce a C—C double bond of an enone of a steroidal compound to produce a mixture of ? ketone product and ? ketone product, comprising treating a solution or suspension of the steroidal compound in a solvent with hydrogen gas in the presence of a catalyst and a substituted pyridine.

Abstract: The invention is directed to a method to reduce a C—C double bond of an enone of a steroidal compound to produce a mixture of ? ketone product and ? ketone product, comprising treating a solution or suspension of the steroidal compound in a solvent with hydrogen gas in the presence of a catalyst and a substituted pyridine.

Abstract: The present invention provides fatty acid amide hydrolase inhibitors, solid forms thereof, compositions thereof, and methods of making and using the same.

Abstract: The invention is directed to a method to reduce a C—C double bond of an enone of a steroidal compound to produce a mixture of ? ketone product and ? ketone product, comprising treating a solution or suspension of the steroidal compound in a solvent with hydrogen gas in the presence of a catalyst and a substituted pyridine.

Abstract: One aspect of the present invention relates to heterocyclic compounds that bind to bcl proteins and inhibit Bcl function. Another aspect of the present invention relates to compositions comprising a heterocyclic compound of the invention. The present invention provides methods for treating and modulating disorders associated with hyperproliferation, such as cancer.

Abstract: A class of bridged or unbridged metallocene compounds is disclosed, wherein the cyclopentadienyl ligands have two or four adjacent substituents forming one or two alkylenic cycles of from 4 to 8 carbon atoms. These metallocenes are useful as catalyst components for the polymerization of olefins, particularly for the (co)polymerization of ethylene and for the polymerization of propylene.

Abstract: A class of bridged or unbridged metallocene compounds is disclosed, wherein the cyclopentadienyl ligands have two or four adjacent substituents forming one or two alkylenic cycles of from 4 to 8 carbon atoms. These metallocenes are useful as catalyst components for the polymerization of olefins, particularly for the (co)polymerization of ethylene and for the polymerization of propylene.

Abstract: One aspect of the present invention relates to heterocyclic compounds that bind to bcl proteins and inhibit Bcl function. Another aspect of the present invention relates to compositions comprising a heterocyclic compound of the invention. The present invention provides methods for treating and modulating disorders associated with hyperproliferation, such as cancer.

Abstract: Metallocene compounds having the general formula (I): R1 are hydrocarbon groups, R2 are hydrogen or hydrocarbon groups; M is a transition metal of group 3, 4, 5, 6 or to the lanthanide or actinide groups in the Periodic Table; M′ is a transition metal selected from those belonging to group 3 or to the lanthanide or actinide groups in the Periodic Table; X is a monoanionic ligand; p is an integer of from 0 to 3, being equal to the oxidation state of M minus two; q is an integer from 3 to 5; and n is an integer from 1 to 4, when the six-membered rings of formula (Ia) are not perhydrated, and is an integer of from 0 to 4, when the six-membered rings of formula (Ia) are perhydrated as well as in the compound of formula (Ib).

Abstract: A class of bridged or unbridged metallocene compounds is disclosed, wherein the cyclopentadienyl ligands have two or four adjacent substituents forming one or two alkylenic cycles of from 4 to 8 carbon atoms.

Abstract: It is disclosed a new class of bridged metallocene compounds of formula (I): wherein R1 and R2 can be hydrogen, alkyl, cycloalkyl, aryl, alkylaryl or arylalkyl radicals; R3 and R4 form a condensed, 5- to 8-membered, aliphatic, aromatic or heterocyclic ring; M is a transition metal of groups 3, 4, 5, lanthanide or actinide; X is hydrogen, halogen, —R, —OR, —OSO2CF3, —OCOR, —SR, —NR2 or PR2, wherein R is an hydrocarbon substituent; and p is 0-3. Furthermore, a catalyst system for olefin polymerization based on the above bridged metallocene compounds and the ligands for their preparation are disclosed.

Abstract: A class of bridged or unbridged metallocene compounds is disclosed, wherein the cyclopentadienyl ligands have two or four adjacent substituents forming one or two alkylenic cycles of from 4 to 8 carbon atoms. These metallocenes are useful as catalyst components for the polymerization of olefins, particularly for the (co)polymerization of ethylene and for the polymerization of propylene.