Patents by Inventor Lin-Chuan Huang

Lin-Chuan Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11955552
    Abstract: A semiconductor device structure includes a source/drain feature comprising a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface. The structure also includes a dielectric layer having a continuous surface in contact with the entire second surface of the source/drain feature, a semiconductor layer having a first surface, a second surface opposing the first surface, and a sidewall connecting the first surface to the second surface, wherein the sidewall of the semiconductor layer is in contact with the sidewall of the source/drain feature. The structure also includes a gate dielectric layer in contact with the continuous surface of the dielectric layer and the second surface of the semiconductor layer, and a gate electrode layer surrounding a portion of the semiconductor layer.
    Type: Grant
    Filed: November 14, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Li-Zhen Yu, Huan-Chieh Su, Shih-Chuan Chiu, Lin-Yu Huang, Cheng-Chi Chuang, Chih-Hao Wang
  • Patent number: D438041
    Type: Grant
    Filed: March 20, 2000
    Date of Patent: February 27, 2001
    Assignee: TWI International Taiwan Inc.
    Inventor: Lin-Chuan Huang
  • Patent number: D441848
    Type: Grant
    Filed: March 20, 2000
    Date of Patent: May 8, 2001
    Assignee: TWI International Taiwan, Inc.
    Inventor: Lin Chuan Huang