Patents by Inventor Lin-Chung Huang

Lin-Chung Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High density trench power MOSFET structure and fabrication method thereof
    Patent number: 6884684
    Abstract: A high density trench power-MOSFET is described in the present invention. The power-MOSFET has a substrate, first and second epi-layers sequentially formed over the substrate and a trench type gate electrode. A silicon nitride layer is formed over the gate electrode to prevent an electrical connecting between the gate electrode and the metal layer formed in a later process.
    Type: Grant
    Filed: May 6, 2003
    Date of Patent: April 26, 2005
    Assignee: Advanced Power Electronics Corp.
    Inventors: Lin-Chung Huang, Keh-Yuh Yu
  • High density trench power MOSFET structure and fabrication method thereof
    Publication number: 20040175889
    Abstract: A high density trench power MOSFET is described in the present invention. The power-MOSFET has a substrate, first and second epi-layers sequentially formed over the substrate and a trench type gate electrode. A silicon nitride layer is formed over the gate electrode to prevent an electrical connecting between the gate electrode and the metal layer formed in a later process.
    Type: Application
    Filed: May 6, 2003
    Publication date: September 9, 2004
    Inventors: Lin-Chung Huang, Keh-Yuh Yu