Patents by Inventor Lin Chung-Yi

Lin Chung-Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11437361
    Abstract: A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.
    Type: Grant
    Filed: September 12, 2019
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Jen Lai, Lin Chung-Yi, Hsi-Kuei Cheng, Chen-Shien Chen, Kuo-Chio Liu
  • Publication number: 20200006312
    Abstract: A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.
    Type: Application
    Filed: September 12, 2019
    Publication date: January 2, 2020
    Inventors: Yi-Jen Lai, Lin Chung-Yi, Hsi-Kuei Cheng, Chen-Shien Chen, Kuo-Chio Liu
  • Patent number: 10522526
    Abstract: A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.
    Type: Grant
    Filed: February 28, 2018
    Date of Patent: December 31, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Jen Lai, Lin Chung-Yi, Hsi-Kuei Cheng, Chen-Shien Chen, Kuo-Chio Liu
  • Publication number: 20190035774
    Abstract: A method includes forming a release film over a carrier, forming a polymer buffer layer over the release film, forming a metal post on the polymer buffer layer, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, and decomposing a first portion of the release film. A second portion of the release film remains after the decomposing. An opening is formed in the polymer buffer layer to expose the metal post.
    Type: Application
    Filed: February 28, 2018
    Publication date: January 31, 2019
    Inventors: Yi-Jen Lai, Lin Chung-Yi, Hsi-Kuei Cheng, Chen-Shien Chen, Kuo-Chio Liu