Abstract: A method for producing a thin film transistor and including the following steps for preparing a glass substrate; having a positive photosensitive coating on the glass substrate; providing a transparent mold plate, having a plurality of ladder opaque protrusions in accordance with a predetermined pattern having different depth; controlling the transparent mold plate downwardly to press into the positive photosensitive coating and non-contacting to the glass substrate; exposing a part of the positive photosensitive coating via an explosion by a UV light; remaining the other part of the positive photosensitive coating, which is shielded by the protrusions and shaped corresponding to the predetermined pattern; separating the transparent mold plate from the glass substrate, and removing the other parts of the photosensitive coating unshielded via a chemical solvent. Thereby, after the positive photosensitive coating is pressed, cured, and cleaned the thin film transistor is formed.

Abstract: A method for producing a thin film transistor includes providing a glass substrate; disposing a positive photosensitive coating on the glass substrate; providing a transparent molding plate having a plurality of ladder opaque protrusions that are arranged in accordance with a predetermined pattern and that have at least two different depths; pressing the transparent molding plate into the positive photosensitive coating without contacting the glass substrate; exposing a part of the positive photosensitive coating which is unshielded under the ladder opaque protrusions, with a UV light; separating the transparent molding plate from the glass substrate after the step of exposing; and removing the part of the positive photosensitive coating, which is unshielded under the ladder opaque protrusions and not cured, using a chemical solvent, whereby the thin film transistor is formed in a pattern having more than two different depths.

Abstract: A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.

Abstract: A method for producing a thin film transistor and including the following steps for preparing a glass substrate; having a positive photosensitive coating on the glass substrate; providing a transparent mold plate, having a plurality of ladder opaque protrusions in accordance with a predetermined pattern having different depth; controlling the transparent mold plate downwardly to press into the positive photosensitive coating and non-contacting to the glass substrate; exploring a part of the positive photosensitive coating via an explosion by a UV light; remaining the other part of the positive photosensitive coating, which is shielded by the protrusions and shaped corresponding to the predetermined pattern; separating the transparent mold plate from the glass substrate, and removing the other parts of the photosensitive coating unshielded via a chemical solvent. Thereby, after the positive photosensitive coating is pressed, cured, and cleaned the thin film transistor is formed.

Abstract: A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge system to transform the silicon nitride/silicon oxide layer into a silicon oxynitride layer. The semiconductor device may be completely manufactured in simplex equipment. Therefore, the production time and production cost are favorably reduced.

Abstract: A novel electrode pattern design for the electrode plate of field emission device is provided. The electrode plate includes an active region having thereon an electrode layer and a non-active region having thereon a dummy structure or dummy electrode. The material of the dummy electrode is selected from one of the electrode layer materials or the material of the dummy electrode has a coefficient of thermal expansion approximately approaching what the electrode layer material has, so that the stress concentration effect occurring in the non-active region can be eliminated.

Abstract: A method for fabricating an anode plate of field emission luminescent device is provided. The method includes the steps of forming a metal layer on a substrate by using the physical or chemical deposition, printing a pattered protection layer on the metal layer, and sintering the pattered protection layer and oxidizing a potion of the metal layer, which is not covered by the pattered protection layer, so as to form a pattered electrode on the metal layer.

Abstract: A reflection-type field emission luminescent device is provided. The field emission luminescent device includes a cathode plate having an electron-emitting source formed thereon for emitting an electron beam, an anode plate including a first side having thereon an anode electrode layer and a fluorescence layer and a second side having thereon a reflection layer, and a vacuum formation structure formed between the cathode plate and the anode plate, in which the electron-emitting source, the anode electrode layer and the fluorescence layer are arranged.

Abstract: A method for improving vacuum is applicable to a process of fabricating a vacuum display. The residual gas or lightwave heating material in the vacuum display is irradiated with at least one type of light source, such that the residual gas in the vacuum display acquires kinetic energy. Then, the residual gas is efficiently absorbed by a vacuum pump or at least one getter, and thereby the vacuum of the vacuum display is improved.

Abstract: A method for forming a silicon oxynitride layer, suitable to be used in the production of semiconductor devices, e.g. poly-silicon thin film transistors, is provided. A plasma surface treatment is performed over a substrate after a silicon nitride/silicon oxide layer has been formed on the substrate by a glow discharge system to transform the silicon nitride/silicon oxide layer into a silicon oxynitride layer. The semiconductor device may be completely manufactured in simplex equipment. Therefore, the production time and production cost are favorably reduced.

Abstract: A method for producing a thin film transistor and including the following steps for preparing a glass substrate; having a negative photosensitive coating on the glass substrate; providing a transparent mold plate, having a plurality of opaque protrusions in accordance with a predetermined pattern; controlling the transparent mold plate downwardly to press into the negative photosensitive coating of the glass substrate; curing a part of the negative photosensitive coating, which is shielded by the protrusions and shaped corresponding to the predetermined pattern, via an explosion by a UV light; separating the transparent mold plate from the glass substrate, and removing a resident, uncured part of the negative photosensitive coating via a chemical solvent. Thereby, after the negative photosensitive coating is pressed, cured, and cleaned the thin film transistor is formed.