Abstract: A power storage connector includes a socket, a sleeve and a plug. The socket includes a fixed plate, a connecting unit and a fixing component configured on the fixed plate, and a limiting structure configured around the outer side of the connecting unit. The sleeve includes a limited component and a fixing structure configured on the outer sidewall and the inner sidewall of the connecting portion respectively. When the sleeve sleeves on the connecting unit, the limited component is located in the limiting structure and configured to move along the limiting structure, so that the sleeve is capable of rotating on the connecting unit. The plug includes a plug case detachably coupled and linked with the sleeve. The plug case drives the sleeve to rotate to engage the fixing structure and the fixing component, so as to connect and fix the plug to the socket.

Abstract: Ferroelectric PbZrxT1−xO3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350° C., followed by thermal treatment at 620° C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.

Abstract: Ferroelectric PbZr.sub.x T.sub.1-x O.sub.3 (PZT) thin films are deposited on Pt coated Si substrates by using RF magnetron sputtering. A method for obtaining desirable stoichiometric PZT, the desired ferroelectric perovskite phase, and better dielectric properties using a PZT target with Pb/(Zr+Ti) ratio of 1.2 and depositing at 350.degree. C., followed by thermal treatment at 620.degree. C. for 30 min is disclosed. The structural and electrical properties of the PZT layer were further improved by a method of fabricating a novel multi-layer structure which combined the PZT thin film with nanolayers of BaTiO.sub.3. The method and device of the present invention provided reduced leakage current density while maintaining high relative effective dielectric constants.

Abstract: The invention relates to a method for forming a high capacitance thin film capacitor comprising forming layers of dielectric material in amorphous, nanocrystalline and polycrystalline configuration and arranging the resulting layers between upper and lower electrodes. The invention further comprises dielectric articles such as capacitors formed in accordance with the method of the invention and includes their use in an electronic circuit.