Abstract: A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.

Abstract: A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.

Abstract: A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.

Abstract: A method of forming a silicon dioxide gate insulator layer on the surface of a native oxide free semiconductor substrate, has been developed. After performing wet clean procedures used to remove organic contaminants, as well as inorganic contaminants from a semiconductor substrate, a first native oxide layer formed on the surface of the semiconductor substrate as a result of the wet clean procedures is removed via a hydrofluoric acid solution. The hydrofluoric acid procedure results in fluoride ions now located on the surface of the semiconductor substrate. Insertion of the semiconductor substrate into an anneal—oxidation chamber results in a second native oxide formed on the surface of the semiconductor substrate, with the thickness of the second native oxide limited by the presence of the fluoride ions on the surface of the semiconductor substrate. An anneal procedure performed at a temperature greater than 1000° C.