Patents by Inventor Lin Kun Tzu

Lin Kun Tzu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6605176
    Abstract: The linear controlling of the pressure of a vacuum chamber, such as a plasma etch chamber used in semiconductor processing, is disclosed. A plasma etch chamber pressure control mechanism includes an aperture diaphragm and a number of aperture blades rotatably mounted on the aperture diaphragm. The diaphragm defines a contractible and expandable aperture for controlling the pressure of the chamber. Rotation of the aperture blades in a first direction contracts the aperture by causing movement of the blades towards the aperture, increasing the pressure of the chamber. Rotation of the aperture blades in a second direction opposite to the first direction expands the aperture by causing movement of the blades away from the aperture, decreasing the pressure of the chamber.
    Type: Grant
    Filed: July 13, 2001
    Date of Patent: August 12, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Lin Kun Tzu
  • Publication number: 20030010447
    Abstract: The linear controlling of the pressure of a vacuum chamber, such as a plasma etch chamber used in semiconductor processing, is disclosed. A plasma etch chamber pressure control mechanism includes an aperture diaphragm and a number of aperture blades rotatably mounted on the aperture diaphragm. The diaphragm defines a contractible and expandable aperture for controlling the pressure of the chamber. Rotation of the aperture blades in a first direction contracts the aperture by causing movement of the blades towards the aperture, increasing the pressure of the chamber. Rotation of the aperture blades in a second direction opposite to the first direction expands the aperture by causing movement of the blades away from the aperture, decreasing the pressure of the chamber.
    Type: Application
    Filed: July 13, 2001
    Publication date: January 16, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventor: Lin Kun Tzu