Abstract: The present disclosure relates to a dual-band antenna array with fan beam and pencil beam. The antenna comprises a substrate and an antenna array arranged on the surface of the substrate, a first antenna element and a second antenna element are cascaded in an x-axis direction by a filter phase-shift line so as to form a subarray. A pair of T-shaped monopoles are symmetrically placed along the x axis at a certain distance above and below each of the first and second antenna elements, respectively, and a rectangular slot is embedded in the upper edge of the second antenna element to achieve good impedance matching. The second antenna element generates a fan beam at one frequency point or frequency band to have the performance of a wide beam, and generates a pencil beam at another frequency point or frequency band to have the performance of a narrow beam.

Abstract: The invention disclosed a high precision decade capacitor standard box. It comprises 6 sets of physical capacitors, 6 changeover switches, and output ports. Each set of physical capacitors include 4 physical capacitors, at least one capacitor has single-unit capacitance. The changeover switch implements the decade encoding of all the combinations of 4 physical capacitors. The changeover switch has input terminals that connect to two electrodes of physical capacitors, and output terminals that connect to the output ports of capacitor standard box to provide the selected capacitance. The capacitance values can be selected any integer from 0 to 10 times of single-unit capacitance. The decade encoding of all the combinations of 4 capacitors can reduce the number of required capacitors and wires for connecting capacitors. The open and short compensation are adopted in this decade capacitor standard, which minimizes error, improve accuracy, and is convenient for measurement, transport, and field application.

Abstract: The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface.

Abstract: A switch embedded integrated circuit for battery protection includes a first pin to be connected with one terminal of a battery, a second pin to be connected with a load or charger, a third pin to be connected with another terminal of the battery, a MOSFET having a body diode thereof and connected between the first and second pins, a control logic circuit and a detection circuit. The detection circuit monitors the voltage between the first pin and the third pin to determine a detection signal for the control logic circuit to turn on or off the MOSFET and switch the direction of the body diode, thereby providing an over charging and an over discharging protection functions.

Abstract: A switch embedded integrated circuit for battery protection includes a MOSFET having a body diode, and a control logic circuit for switching the MOSFET and the direction of the body diode to control the charge current to and the discharge current from a battery. The control logic circuit turns off the MOSFET once any abnormal operation such as over-voltage and under-voltage happens, and turns on the MOSFET according to an OVPR threshold, an OVPR delay time, an UVPR threshold and an UVPR delay time. The OVPR threshold and the OVPR delay time are determined depending on the battery being coupled to a load or a charger, or floating.

Abstract: The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface.

Abstract: A switch embedded integrated circuit for battery protection includes a MOSFET having a body diode, and a control logic circuit for switching the MOSFET and the direction of the body diode to control the charge current to and the discharge current from a battery. The control logic circuit turns off the MOSFET once any abnormal operation such as over-voltage and under-voltage happens, and turns on the MOSFET according to an OVPR threshold, an OVPR delay time, an UVPR threshold and an UVPR delay time. The OVPR threshold and the OVPR delay time are determined depending on the battery being coupled to a load or a charger, or floating.

Abstract: A switch embedded integrated circuit for battery protection includes a first pin to be connected with one terminal of a battery, a second pin to be connected with a load or charger, a third pin to be connected with another terminal of the battery, a MOSFET having a body diode thereof and connected between the first and second pins, a control logic circuit and a detection circuit. The detection circuit monitors the voltage between the first pin and the third pin to determine a detection signal for the control logic circuit to turn on or off the MOSFET and switch the direction of the body diode, thereby providing an over charging and an over discharging protection functions.

Abstract: A chiral biphenyl compound includes a hindered 2,2'-substituted-1,1'-biphenyl subunit and has the following formula: ##STR1## The chiral biphenyl compounds have been shown to be useful as catalysts in asymmetric reactions. For example, an organozinc species can be formed by reacting the chiral biphenyl compound with an organozinc compound, R.sup.14 R.sup.15 Zn and then used as a catalyst for the asymmetric alkylation of an aldehyde by an organozinc compound.

Abstract: An organozinc species, useful in the reactions of aldehydes and ketones, is a reaction product of a) a biphenyl compound having one or more hindered 2,2'-substituted biphenyl subunits and b) an organozinc compound, such as diethylzinc. The organozinc species catalyzes the reduction of a ketone by a borane, as well as the epoxidation of .alpha.,.beta.-unsaturated compounds by an oxidizing agent, such as O.sub.2 or an alkyl hydroperoxide. The biphenyl compound may be chiral and may catalyze the formation of optically active reaction products.