Patents by Inventor Lin Pu

Lin Pu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20260088512
    Abstract: The disclosure provides an apparatus and system with an antenna array. The antenna array includes a plurality of microstrip antenna elements. Each microstrip antenna element includes a dielectric substrate, a radiation patch, a metal bottom plate, a feeding probe, and a short-circuit pillar. The radiation patch is located on an upper surface of the dielectric substrate, the metal bottom plate is located on a lower surface of the dielectric substrate, the feeding probe penetrates the dielectric substrate and connects one end of the radiation patch to the metal bottom plate, and the short-circuit pillar penetrates the dielectric substrate and connects the other end of the radiation patch to the metal bottom plate. The short-circuit pillar is disposed on the radiation patch, and a first-order mode and a second-order mode are simultaneously excited.
    Type: Application
    Filed: December 4, 2025
    Publication date: March 26, 2026
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Mingchun Tang, Kejin Chen, Mei Li, Lin Pu, Jianing Yang, Yi Tan, Hai Xin, Zhi Yang
  • Patent number: 12113306
    Abstract: The present disclosure relates to a dual-band antenna array with fan beam and pencil beam. The antenna comprises a substrate and an antenna array arranged on the surface of the substrate, a first antenna element and a second antenna element are cascaded in an x-axis direction by a filter phase-shift line so as to form a subarray. A pair of T-shaped monopoles are symmetrically placed along the x axis at a certain distance above and below each of the first and second antenna elements, respectively, and a rectangular slot is embedded in the upper edge of the second antenna element to achieve good impedance matching. The second antenna element generates a fan beam at one frequency point or frequency band to have the performance of a wide beam, and generates a pencil beam at another frequency point or frequency band to have the performance of a narrow beam.
    Type: Grant
    Filed: December 2, 2022
    Date of Patent: October 8, 2024
    Assignee: CHONGQING UNIVERSITY
    Inventors: Mei Li, Lin Pu, Ming-Chun Tang, Lei Zhu
  • Publication number: 20230178897
    Abstract: The present disclosure relates to a dual-band antenna array with fan beam and pencil beam. The antenna comprises a substrate and an antenna array arranged on the surface of the substrate, a first antenna element and a second antenna element are cascaded in an x-axis direction by a filter phase-shift line so as to form a subarray. A pair of T-shaped monopoles are symmetrically placed along the x axis at a certain distance above and below each of the first and second antenna elements, respectively, and a rectangular slot is embedded in the upper edge of the second antenna element to achieve good impedance matching. The second antenna element generates a fan beam at one frequency point or frequency band to have the performance of a wide beam, and generates a pencil beam at another frequency point or frequency band to have the performance of a narrow beam.
    Type: Application
    Filed: December 2, 2022
    Publication date: June 8, 2023
    Applicant: Chongqing University
    Inventors: Mei LI, Lin PU, Ming-Chun TANG, Lei ZHU
  • Patent number: 10928430
    Abstract: The invention disclosed a high precision decade capacitor standard box. It comprises 6 sets of physical capacitors, 6 changeover switches, and output ports. Each set of physical capacitors include 4 physical capacitors, at least one capacitor has single-unit capacitance. The changeover switch implements the decade encoding of all the combinations of 4 physical capacitors. The changeover switch has input terminals that connect to two electrodes of physical capacitors, and output terminals that connect to the output ports of capacitor standard box to provide the selected capacitance. The capacitance values can be selected any integer from 0 to 10 times of single-unit capacitance. The decade encoding of all the combinations of 4 capacitors can reduce the number of required capacitors and wires for connecting capacitors. The open and short compensation are adopted in this decade capacitor standard, which minimizes error, improve accuracy, and is convenient for measurement, transport, and field application.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: February 23, 2021
    Assignee: Chengdu Kaipu Electronic Science and Technologies Co. Ltd.
    Inventors: Guiying Li, Pan Jin, Yanjun Xu, Lin Pu, Dian Jin
  • Patent number: 8604409
    Abstract: The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface.
    Type: Grant
    Filed: February 10, 2010
    Date of Patent: December 10, 2013
    Assignees: Nanjing University
    Inventors: Feng Yan, Rong Zhang, Yi Shi, Lin Pu, Yue Xu, Fuwei Wu, Xiaofeng Bo, Haoguang Xia
  • Publication number: 20110215227
    Abstract: The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface.
    Type: Application
    Filed: February 10, 2010
    Publication date: September 8, 2011
    Applicants: NANJING UNIVERSITY
    Inventors: Feng Yan, Rong Zhang, Yi Shi, Lin Pu, Yue Xu, Fuwei Wu, Xiaofeng Bo, Haoguang Xia
  • Patent number: 6020452
    Abstract: A chiral biphenyl compound includes a hindered 2,2'-substituted-1,1'-biphenyl subunit and has the following formula: ##STR1## The chiral biphenyl compounds have been shown to be useful as catalysts in asymmetric reactions. For example, an organozinc species can be formed by reacting the chiral biphenyl compound with an organozinc compound, R.sup.14 R.sup.15 Zn and then used as a catalyst for the asymmetric alkylation of an aldehyde by an organozinc compound.
    Type: Grant
    Filed: August 26, 1997
    Date of Patent: February 1, 2000
    Assignee: North Dakota State University
    Inventors: Lin Pu, Wei-Sheng Huang, Qiao-Sheng Hu
  • Patent number: 5889134
    Abstract: An organozinc species, useful in the reactions of aldehydes and ketones, is a reaction product of a) a biphenyl compound having one or more hindered 2,2'-substituted biphenyl subunits and b) an organozinc compound, such as diethylzinc. The organozinc species catalyzes the reduction of a ketone by a borane, as well as the epoxidation of .alpha.,.beta.-unsaturated compounds by an oxidizing agent, such as O.sub.2 or an alkyl hydroperoxide. The biphenyl compound may be chiral and may catalyze the formation of optically active reaction products.
    Type: Grant
    Filed: August 26, 1997
    Date of Patent: March 30, 1999
    Assignee: North Dakota State University
    Inventors: Lin Pu, Wei-Sheng Huang, Qiao-Sheng Hu