Patents by Inventor Lin TZU HSIANG

Lin TZU HSIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and the manufacturing method thereof
    Patent number: 11948884
    Abstract: A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a second edge opposite to the first edge and connecting the second side surface; a first modified trace formed on the first side surface; and a semiconductor stack formed on the upper surface, including a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge; wherein a shortest distance between the first edge and the fifth edge is S1 ?m, and a shortest distance between the second edge and the sixth edge is S2 ?m; wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of ?1 with the vertical direction, the second side surface forms a second acute angle with a degree of ?2 with the vertical dire
    Type: Grant
    Filed: August 24, 2021
    Date of Patent: April 2, 2024
    Assignee: EPISTAR CORPORATION
    Inventors: Lin Tzu Hsiang, Chen Chih Hao, Wu Wei Che, Chen Ying Chieh
  • SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD THEREOF
    Publication number: 20220068792
    Abstract: A semiconductor device includes: a substrate, including an upper surface and a first to a fourth side surfaces; wherein the upper surface includes a first edge connecting the first side surface and a second edge opposite to the first edge and connecting the second side surface; a first modified trace formed on the first side surface; and a semiconductor stack formed on the upper surface, including a lower surface connecting the upper surface of the substrate, and the lower surface comprises a fifth edge adjacent to the first edge and a sixth edge opposite to the fifth edge and adjacent to the second edge; wherein a shortest distance between the first edge and the fifth edge is S1 ?m, and a shortest distance between the second edge and the sixth edge is S2 ?m; wherein in a lateral view viewing from the third side surface, the first side surface forms a first acute angle with a degree of ?1 with the vertical direction, the second side surface forms a second acute angle with a degree of ?2 with the vertical dire
    Type: Application
    Filed: August 24, 2021
    Publication date: March 3, 2022
    Inventors: Lin TZU HSIANG, Chen CHIH HAO, Wu WEI CHE, Chen YING CHIEH