Patents by Inventor Lin-Wei Wang
Lin-Wei Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9735039Abstract: An apparatus for separating a wafer from a carrier includes a platform having an upper surface, a tape feeding unit, a first robot arm, and a controller coupled to the platform. The controller is configured to mount a wafer frame, by using the tape feeding unit, on a wafer of a wafer assembly on the upper surface of the platform. The wafer assembly includes the wafer, a carrier, and a layer of wax between the wafer and the carrier. The controller is also configured to heat the upper surface of the platform to a predetermined temperature and separate, by the first robot arm, the wafer and the wafer frame mounted thereon from the carrier.Type: GrantFiled: August 21, 2014Date of Patent: August 15, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien Ling Hwang, Lin-Wei Wang, Chung-Shi Liu
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Patent number: 9700950Abstract: The present disclosure is directed to an apparatus for the application of soldering flux to a semiconductor workpiece. In some embodiments the apparatus comprises a dipping plate having a reservoir which is adapted to containing different depths of flux material. In some embodiments, the reservoir comprises at least two landing regions having sidewalls which form first and second dipping zones. The disclosed apparatus can allow dipping of the semiconductor workpiece in different depths of soldering flux without the necessity for changing dipping plates.Type: GrantFiled: August 15, 2012Date of Patent: July 11, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bor-Ping Jang, Lin-Wei Wang, Ying-Jui Huang, Yi-Li Hsiao, Chien Ling Hwang, Chung-Shi Liu
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Patent number: 8940618Abstract: A method for cutting a semiconductor wafer into semiconductor chips that reduces defects at the semiconductor chip corners. The method includes a pre-cutting processing step of trimming the semiconductor chip corners so that mechanical stress is reduced at the corners. The method includes dicing channels on a semiconductor wafer thereby defining the geometrical shape of one of the semiconductor chips, modifying the corners of the one of the semiconductor chips, and cutting the semiconductor wafer to separate the one of the semiconductor chips from other semiconductor chips.Type: GrantFiled: March 13, 2012Date of Patent: January 27, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien Ling Hwang, Lin-Wei Wang, Chung-Shi Liu
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Publication number: 20140360671Abstract: An apparatus for separating a wafer from a carrier includes a platform having an upper surface, a tape feeding unit, a first robot arm, and a controller coupled to the platform. The controller is configured to mount a wafer frame, by using the tape feeding unit, on a wafer of a wafer assembly on the upper surface of the platform. The wafer assembly includes the wafer, a carrier, and a layer of wax between the wafer and the carrier. The controller is also configured to heat the upper surface of the platform to a predetermined temperature and separate, by the first robot arm, the wafer and the wafer frame mounted thereon from the carrier.Type: ApplicationFiled: August 21, 2014Publication date: December 11, 2014Inventors: Chien Ling HWANG, Lin-Wei WANG, Chung-Shi LIU
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Patent number: 8834662Abstract: A method of separating a wafer from a carrier includes placing a wafer assembly on a platform. The wafer assembly includes the wafer, the carrier, and a layer of wax between the wafer and the carrier. A wafer frame is mounted on the wafer of the wafer assembly. The layer of wax is softened. The wafer and the wafer frame mounted thereon are separated, by a first robot arm, from the carrier.Type: GrantFiled: March 22, 2012Date of Patent: September 16, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien Ling Hwang, Lin-Wei Wang, Chung-Shi Liu
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Patent number: 8702871Abstract: A method includes generating a solvent-containing vapor that contains a solvent. The solvent-containing vapor is conducted to a package assembly to clean the package assembly. The solvent-containing vapor condenses to form a liquid on a surface of the package assembly, and flows off from the surface of the package assembly.Type: GrantFiled: August 30, 2011Date of Patent: April 22, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Li Hsiao, Bor-Ping Jang, Kuei-Wei Huang, Lin-Wei Wang, Chien Ling Hwang, Chung-Shi Liu
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Publication number: 20140048586Abstract: The present disclosure is directed to an apparatus for the application of soldering flux to a semiconductor workpiece. In some embodiments the apparatus comprises a dipping plate having a reservoir which is adapted to containing different depths of flux material. In some embodiments, the reservoir comprises at least two landing regions having sidewalls which form first and second dipping zones. The disclosed apparatus can allow dipping of the semiconductor workpiece in different depths of soldering flux without the necessity for changing dipping plates.Type: ApplicationFiled: August 15, 2012Publication date: February 20, 2014Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Bor-Ping Jang, Lin-Wei Wang, Ying-Jui Huang, Yi-Li Hsiao, Chien Ling Hwang, Chung-Shi Liu
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Patent number: 8616433Abstract: A method of forming a bump structure includes providing a first work piece including a dielectric layer having a top surface; placing a second work piece facing the first work piece; placing a heating tool contacting the second work piece; and heating the second work piece using the heating tool to perform a reflow process. A first solder bump between the first and the second work pieces is melted to form a second solder bump. Before the second solder bump solidifies, pulling the second work piece away from the first work piece, until an angle formed between a tangent line of the second solder bump and the top surface of the dielectric layer is greater than about 50 degrees, wherein the tangent line is drawn at a point where the second solder bump joins the dielectric layer.Type: GrantFiled: December 28, 2012Date of Patent: December 31, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Wei Huang, Wei-Hung Lin, Lin-Wei Wang, Bor-Ping Jang, Ming-Da Cheng, Chung-Shi Liu
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Publication number: 20130273717Abstract: The present disclosure is directed to an apparatus for the singulation of a semiconductor substrate or wafer. In some embodiments the singulation apparatus comprises a plurality of cutting devices. The cutting devices are configured to form multiple concurrent cutting lines in parallel on a surface of the semiconductor wafer. In some embodiments, the singulation apparatus comprises at least two dicing saws or laser modules. The disclosed singulation apparatus can dice the semiconductor wafer into individual chips by dicing in a direction across a complete circumferential edge of the wafer, thereby decreasing process time and increasing throughput.Type: ApplicationFiled: April 17, 2012Publication date: October 17, 2013Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien Ling Hwang, Yi-Li Hsiao, Bor-Ping Jang, Hsin-Hung Liao, Lin-Wei Wang, Chung-Shi Liu
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Publication number: 20130248119Abstract: A method of separating a wafer from a carrier includes placing a wafer assembly on a platform. The wafer assembly includes the wafer, the carrier, and a layer of wax between the wafer and the carrier. A wafer frame is mounted on the wafer of the wafer assembly. The layer of wax is softened. The wafer and the wafer frame mounted thereon are separated, by a first robot arm, from the carrier.Type: ApplicationFiled: March 22, 2012Publication date: September 26, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien Ling HWANG, Lin-Wei WANG, Chung-Shi LIU
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Publication number: 20130244403Abstract: A method for cutting a semiconductor wafer into semiconductor chips that reduces defects at the semiconductor chip corners. The method includes a pre-cutting processing step of trimming the semiconductor chip corners so that mechanical stress is reduced at the corners. The method includes dicing channels on a semiconductor wafer thereby defining the geometrical shape of one of the semiconductor chips, modifying the corners of the one of the semiconductor chips, and cutting the semiconductor wafer to separate the one of the semiconductor chips from other semiconductor chips.Type: ApplicationFiled: March 13, 2012Publication date: September 19, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien Ling HWANG, Lin-Wei WANG, Chung-Shi LIU
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Publication number: 20130048027Abstract: A method includes generating a solvent-containing vapor that contains a solvent. The solvent-containing vapor is conducted to a package assembly to clean the package assembly. The solvent-containing vapor condenses to form a liquid on a surface of the package assembly, and flows off from the surface of the package assembly.Type: ApplicationFiled: August 30, 2011Publication date: February 28, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Li Hsiao, Bor-Ping Jang, Kuei-Wei Huang, Lin-Wei Wang, Chien Ling Hwang, Chung-Shi Liu
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Patent number: 8360303Abstract: A method of forming a bump structure includes providing a first work piece including a dielectric layer having a top surface; placing a second work piece facing the first work piece; placing a heating tool contacting the second work piece; and heating the second work piece using the heating tool to perform a reflow process. A first solder bump between the first and the second work pieces is melted to form a second solder bump. Before the second solder bump solidifies, pulling the second work piece away from the first work piece, until an angle formed between a tangent line of the second solder bump and the top surface of the dielectric layer is greater than about 50 degrees, wherein the tangent line is drawn at a point where the second solder bump joins the dielectric layer.Type: GrantFiled: July 22, 2010Date of Patent: January 29, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Wei Huang, Wei-Hung Lin, Lin-Wei Wang, Bor-Ping Jang, Ming-Da Cheng, Chung-Shi Liu
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Publication number: 20120021183Abstract: A method of forming a bump structure includes providing a first work piece including a dielectric layer having a top surface; placing a second work piece facing the first work piece; placing a heating tool contacting the second work piece; and heating the second work piece using the heating tool to perform a reflow process. A first solder bump between the first and the second work pieces is melted to form a second solder bump. Before the second solder bump solidifies, pulling the second work piece away from the first work piece, until an angle formed between a tangent line of the second solder bump and the top surface of the dielectric layer is greater than about 50 degrees, wherein the tangent line is drawn at a point where the second solder bump joins the dielectric layer.Type: ApplicationFiled: July 22, 2010Publication date: January 26, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kuei-Wei Huang, Wei-Hung Lin, Lin-Wei Wang, Bor-Ping Jang, Ming-Da Cheng, Chung-shi Liu
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Publication number: 20050095976Abstract: A load port transfer mechanism having reduced particle contamination is described. The load port transfer mechanism comprises a load port transfer arm over which extends a cover and a means for blowing air past the load port transfer arm. The cover shields the load port transfer arm from particle contamination.Type: ApplicationFiled: October 29, 2003Publication date: May 5, 2005Inventors: Huan-Liang Tzeng, Jung-Hsiang Chang, Lin-Wei Wang