Abstract: A semiconductor memory device includes a substrate having a memory area and a logic circuit area thereon, a first interlayer dielectric layer on the substrate, and a second interlayer dielectric layer on the substrate. An embedded memory cell structure is disposed within the memory area between the first interlayer dielectric layer and the second interlayer dielectric layer. The second interlayer dielectric layer includes a first portion covering the embedded memory cell structure within the memory area and a second portion covering the logic circuit area. A top surface of the first portion is coplanar with a top surface of the second portion.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.

Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a metal interconnection in the IMD layer, forming a magnetic tunneling junction (MTJ) on the metal interconnection, and performing a trimming process to shape the MTJ. Preferably, the MTJ includes a first slope and a second slope and the first slope is less than the second slope.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A semiconductor structure includes a semiconductor substrate, a gate electrode, a first spacer, and a first contact etch stop layer (CESL). The semiconductor substrate includes a fin structure. The gate electrode is over the fin structure. The first spacer is over the fin structure and on a lateral side of the gate electrode, wherein a top surface of the first spacer is inclined towards the gate electrode. The first CESL is over the fin structure and contacting the first spacer, wherein an angle between the top surface of the first spacer and a sidewall of the first CESL is less than about 140°.

Abstract: A data processing method, applied to an applet, includes: sending a plug-in service request to a platform server, the plug-in service request comprising a plug-in identifier configured for the platform server to establish a usage association between a plug-in corresponding to the plug-in identifier and the applet, wherein the plug-in has an independent data server; receiving an applet access request, determining whether the applet access request and a service corresponding to the plug-in meet a preset correspondence, and if it is determined that the applet access request and the service corresponding to the plug-in meet the preset correspondence, loading the plug-in according to the usage association; and sending the applet access request to the plug-in, so that the plug-in completes a task corresponding to the applet access request by accessing the data server of the plug-in.

Abstract: A data processing method, applied to an applet, includes: sending a plug-in service request to a platform server, the plug-in service request comprising a plug-in identifier configured for the platform server to establish a usage association between a plug-in corresponding to the plug-in identifier and the applet, wherein the plug-in has an independent data server; receiving an applet access request, determining whether the applet access request and a service corresponding to the plug-in meet a preset correspondence, and if it is determined that the applet access request and the service corresponding to the plug-in meet the preset correspondence, loading the plug-in according to the usage association; and sending the applet access request to the plug-in, so that the plug-in completes a task corresponding to the applet access request by accessing the data server of the plug-in.

Abstract: A dynamic toolbox that is capable of being disassembled has two pull-out side tool racks and two pop-out lift-racks. The toolbox is configured with multiple triangular apertures that provide sufficient supporting strength but eliminate unnecessary material weight.

Abstract: A dynamic toolbox that is capable of being disassembled has two pull-out side tool racks and two pop-out lift-racks. The toolbox is configured with multiple triangular apertures that provide sufficient supporting strength but eliminate unnecessary material weight.

Abstract: A multifunctional complex power supply device has an anti-countercurrent and voltage-regulation circuit with a rechargeable battery connected in conjunction with a solar battery, a generator and a microphone. A first switch is mounted between the solar battery and the anti-countercurrent and voltage-regulation circuit, a second switch is between the generator and the anti-countercurrent and voltage-regulation circuit, and a third switch is between the microphone and the anti-countercurrent and voltage-regulation circuit. When using the power supply device, one of the switches is selected and the solar battery, generator or sound sounds input into the microphone can charge the rechargeable battery.

Abstract: A multifunctional complex power supply device has an anti-countercurrent and voltage-regulation circuit with a rechargeable battery connected in conjunction with a solar battery, a generator and a microphone. A first switch is mounted between the solar battery and the anti-countercurrent and voltage-regulation circuit, a second switch is between the generator and the anti-countercurrent and voltage-regulation circuit, and a third switch is between the microphone and the anti-countercurrent and voltage-regulation circuit. When using the power supply device, one of the switches is selected and the solar battery, generator or sound sounds input into the microphone can charge the rechargeable battery.

Abstract: This invention discloses a MOSFET power device supported on a substrate. The MOSFET power device includes a plurality metal-polysilicon gate segments disposed over a gate oxide layer and a plurality of source/drain metal segments each disposed over a corresponding drain or source region in the substrate. The MOSFET power device further includes a plurality of insulating oxide blocks each disposed between a corresponding gap between the source/drain metal segment and the metal-polysilicon gate segment Each of the metal-polysilicon gate segments includes a metal layer disposed above a polysilicon layer wherein a thickness TM of the metal layer is greater than or equal to half of the width WG of the metal-polysilicon gate, i.e., TM≧0.5(WG). And, each of the insulating oxide blocks having a thickness TO greater than or equal to half of the width of the oxide block WO, i.e., TO≧0.5(WO).

Abstract: The present invention discloses a method for fabricating a MOSFET device supported on a substrate.

Abstract: A light source with appropriate optics focusses light on the wafer surface during deposition, while a nearby collector is biased to collect photoemitted electrons from the growing surface. A pico ammeter can be used to convert the small oscillatory current detected to a substantial voltage signal which can be recorded or processed by computer or other sutiable device. The light must contain wavelengths at energies close to or greater than the energy of the photoemission threshold. The detected photoemitted electron signal has an oscillatory component occurring due to the growth of epitaxial layers. This oscillation has frequency 1/.tau., where .tau. is the monolayer accumulation time.