Abstract: A gas extraction device for metal mineral inclusions and a gas extraction method therefor are provided, the device includes a base plate, an annular carrier, sealing covers, a grinding assembly, a vacuum assembly, a gas-gathering assembly and a mass spectrometer. The annular carrier is disposed on the base plate, multiple grinding chambers are defined and evenly distributed in a circular shape on the annular carrier, the sealing covers are disposed at openings of the grinding chambers, the grinding assembly includes grinding hammers, and the grinding hammers penetrate through the sealing covers and extend into the grinding chambers. Side walls of each grinding chamber defines a first through hole and a second through hole. The vacuum assembly is communicated with the grinding chambers through the first through holes. The gas-gathering assembly is communicated with the grinding chambers through the second through holes. The mass spectrometer is communicated with the gas-gathering assembly.

Abstract: The present invention discloses a extra thick hot rolled H section steel and a production method therefor. The extra thick hot rolled H section steel contains, by mass, the following chemical components: 0.04-0.11% of C, 0.10-0.40% of Si, 0.40-1.00% of Mn, 0.40-1.00% of Cr, 0.10-0.40% of Cu, 0.020-0.060% of Nb, 0.040-0.100% of V, 0.010-0.025% of Ti, 0.010-0.030% of Al, 0.0060-0.0120% of N, not more than 0.015% of P, not more than 0.005% of S, not more than 0.0060% of O, and the balance Fe and trace residual elements, wherein 0.090%?Nb+V+Ti?0.170%, 6.5?(V+Ti)/N?10.5, and 0.30%?CEV?0.48%. The extra thick hot rolled H section steel has a flange thickness of 90 mm-150 mm, has excellent comprehensive mechanical properties, and can well meet the needs for heavy supporting structural parts of high-rise buildings, large squares, bridge structures, etc.

Abstract: An electronic-grade glass fiber composition includes the following components with corresponding amounts by weight percentages 51.0-57.5% SiO2, 11.0-17.0% Al2O3, >4.5% and ?6.4% B2O3, 19.5-24.8% CaO, 0.1-1.9% MgO, 0.05-1.2% R2O=Na2O+K2O+Li2O, 0.05-0.8% Fe2O3, 0.01-1.0% TiO2, and 0.01-1.0% F2. A weight percentage ratio C1=SiO2/B2O3 is 8.1-12.7, a weight percentage ratio C2=B2O3/(R2O+MgO) is 1.7-6.3, and a total weight percentage of the above components is greater than or equal to 99%.

Abstract: In a battery monitoring system included in a secondary battery, high-accuracy charge control is enabled at low cost. A semiconductor device includes: a drive unit which drives a transistor for controlling the charge current of a secondary battery and which is configured to be capable of selecting one of plural different voltages as a drive voltage (VGC) for turning on the transistor; and a data processing control unit which performs program processing. The data processing control unit generates condition information including information about the battery level of the secondary battery based on measured values of the secondary battery voltage and current and adjusts the charge current of the secondary battery by changing the drive voltage selection.

Abstract: In a battery monitoring system included in a secondary battery, high-accuracy charge control is enabled at low cost. A semiconductor device includes: a drive unit which drives a transistor for controlling the charge current of a secondary battery and which is configured to be capable of selecting one of plural different voltages as a drive voltage (VGC) for turning on the transistor; and a data processing control unit which performs program processing. The data processing control unit generates condition information including information about the battery level of the secondary battery based on measured values of the secondary battery voltage and current and adjusts the charge current of the secondary battery by changing the drive voltage selection.

Abstract: In a battery monitoring system included in a secondary battery, high-accuracy charge control is enabled at low cost. A semiconductor device includes: a drive unit which drives a transistor for controlling the charge current of a secondary battery and which is configured to be capable of selecting one of plural different voltages as a drive voltage (VGC) for turning on the transistor; and a data processing control unit which performs program processing. The data processing control unit generates condition information including information about the battery level of the secondary battery based on measured values of the secondary battery voltage and current and adjusts the charge current of the secondary battery by changing the drive voltage selection.