Patents by Inventor Lin Xiu

Lin Xiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090046497
    Abstract: A system and a method for reducing critical current of magnetic random access memory (MRAM) are disclosed. The magnetic device includes at least a pinned layer, a spacer layer and a free layer, and the material of the pinned layer and the free layer is perpendicularly anisotropic ferrimagnetic. The spacer layer is an insulator. By the modified Landau-Lifshitz-Gilbert equations, the varying trend of the critical current can be estimated.
    Type: Application
    Filed: October 15, 2008
    Publication date: February 19, 2009
    Inventors: Te-Ho Wu, Alberto Canizo Cabrera, Lin-Xiu Ye
  • Publication number: 20070215967
    Abstract: A system and a method for reducing critical current of magnetic random access memory (MRAM) are disclosed. The magnetic device includes at least a pinned layer, a spacer layer and a free layer, and the material of the pinned layer and the free layer is perpendicularly anisotropic ferrimagnetic. The spacer layer is an insulator. By the modified Landau-Lifshitz-Gilbert equations, the varying trend of the critical current can be estimated.
    Type: Application
    Filed: December 27, 2006
    Publication date: September 20, 2007
    Inventors: Te-Ho Wu, Alberto Canizo Cabrera, Lin-Xiu Ye
  • Patent number: D1018996
    Type: Grant
    Filed: November 27, 2023
    Date of Patent: March 19, 2024
    Inventor: Lin Xiu
  • Patent number: D1068168
    Type: Grant
    Filed: July 25, 2024
    Date of Patent: March 25, 2025
    Inventor: Lin Xiu