Patents by Inventor Lin Xu
Lin Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250246413Abstract: An apparatus for processing a substrate is provided. A capacitively coupled plasma electrode is within a capacitively coupled plasma processing chamber. A plasma confinement component is within the capacitively coupled plasma processing chamber, wherein at least one of the capacitively coupled plasma electrode and plasma confinement component comprises a metal component body with a plasma facing surface and a plasma spray coating over the plasma facing surface.Type: ApplicationFiled: September 29, 2022Publication date: July 31, 2025Inventors: Lin XU, Satish SRINIVASAN, David Joseph WETZEL, Scott BRIGGS, Andrew D. BAILEY, III, Yiwei SONG, Michael Julius KINSLER, John Michael KERNS, Lei LIU, Robin KOSHY
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Publication number: 20250234601Abstract: An improved silicon carbide (SiC) super junction (SJ) MOSFET having at least two buried P-shield (BPS) regions facing each other for gate oxide electric-field and saturation current reductions is disclosed. The two BPS regions are spaced apart from a body region and formed either adjoining sidewalls or below a bottom of a P column region. Moreover, a saturation current pitching (SCP) structure formed in a Junction Field Effect Transistor (JFET) region sandwiched between the two BPS regions limits saturation current of the device in a forward conduction stage for the short-circuit capability improvement.Type: ApplicationFiled: January 17, 2024Publication date: July 17, 2025Applicant: Nami MOS CO., LTD.Inventors: FU-YUAN HSIEH, LIN XU
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Patent number: 12354766Abstract: A large-tonnage disc-shaped suspension ceramic insulator includes a ceramic insulator body, and a metal pin and a metal cap coaxially assembled with the ceramic insulator body through adhesive material, assembly interfaces of the ceramic insulator body, the metal cap, and the metal pin are coated with a primer; the adhesive material includes an expansion agent; and the expansion agent is configured to make the adhesive material expand after hardening so as to create a prestress between the ceramic insulator body and the metal pin as well as the metal cap. The present disclosure achieves overall compressive prestress distribution of the ceramic insulator product, mitigating thermal stress caused by temperature changes and improving the tensile strength of the large-tonnage disc-shaped suspension ceramic insulator assembly. By treating the assembly interfaces with the primer, the present disclosure significantly improves the assembly strength of the ceramic insulator/metal assembly.Type: GrantFiled: January 12, 2025Date of Patent: July 8, 2025Assignees: CHAOHU UNIVERSITY, PINGXIANG BEST INSULATOR GROUP CO., LTDInventors: Xiaoyong Xu, Jiasheng Liu, Hui Wei, Fenping Chen, Lin Xu, Linmin Xu, Zhiying Zhou, Jianguo Deng, Minghua Liu
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Publication number: 20250206807Abstract: The present application discloses a recombinant humanized type III collagen microsphere with innovative spatial structure, and its design, preparation process, and use. The gene sequence of humanized type III collagen is designed and constructed, and cut by a cutting enzyme and then cyclized by cyclase, obtaining the recombinant humanized type III collagen microspheres with an innovative spatial structure, without introducing any foreign insertion gene or modification gene. The collagen microsphere of the present application exhibits a long degradation time and good stability and durability and can exert its various biological effects for a long time, which can better adapt to applications in the pharmaceutical and cosmetics industries.Type: ApplicationFiled: December 17, 2024Publication date: June 26, 2025Inventors: Yu Jin, Lin Xu, Nianqin Xu, Jinbiao Lu, Dongwu Zhang, Songquan Xu, Kaijin Chang, Mouzhi Liu, Yuan Jiang
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Publication number: 20250191893Abstract: An apparatus for plasma processing a wafer at cryogenic temperatures is provided. A wafer support is adapted to support a wafer within a plasma processing chamber. A gas source provides gas to the plasma processing chamber. A cooling system provides cooling the wafer support. A component comprises a spark plasma sintered body comprising a sintering powder comprising at least one of a doped silicon carbide powder, wherein a dopant is at least one of aluminum (Al), yttrium (Y), tungsten (W), tantalum (Ta), tungsten carbide (WC), tantalum carbide (TaC), and aluminum-silicon carbide (AlSiC), or a doped carbide, wherein the carbide is at least one of boron carbide (B4C), WC, or TaC and wherein a dopant is at least one of B, W, molybdenum (Mo), Al, and Ta, or pure B4C, WC, TaC, W, or Mo.Type: ApplicationFiled: March 21, 2023Publication date: June 12, 2025Inventors: Lin XU, Satish SRINIVASAN, Harmeet SINGH, John DAUGHERTY, Pankaj HAZARIKA
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Publication number: 20250177391Abstract: Provided herein are compounds, such as compounds of Formulae (I) and (II), and pharmaceutically acceptable salts, hydrates, solvates, polymorphs, co-crystals, tautomers, stereoisomers, isotopically labeled derivatives, and prodrugs thereof, and compositions, methods, uses, and kits thereof. The compounds provided herein are DDR1, DDR2, or p38 MAPK (e.g., p38-alpha) inhibitors and are therefore useful for the treatment and/or prevention of various diseases and conditions (e.g., inflammatory diseases, joint diseases, proliferative diseases, fibrosis, or pain).Type: ApplicationFiled: February 22, 2023Publication date: June 5, 2025Applicant: President and Fellows of Harvard CollegeInventors: Yefu Li, Lin Xu
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Publication number: 20250163282Abstract: The invention relates to a preparation process of a modified polyamide wax for coatings and a formed coating. The coating includes 0.5-5 parts by weight of modified polyamide wax; the preparation process of the modified polyamide wax for coating includes the following steps: S1, ratio of raw materials:raw materials include water-based polyamide wax, water-based polyurethane, polyoxyethylene monostearate, the first composite modifier, organic amine, organic solvent, the second composite modifier, deionized water; S2, prepare the first complex; S3, add organic amine, organic solvent and the second composite modifier is evenly mixed, and the temperature is raised to 100-120° C. until the water-based polyamide wax is completely dissolved to obtain the first intermediate modifier; S4, deionized water is heated up and slowly added to the first intermediate modifier in the process. The coating system prepared by the invention has good leveling, stability and sag resistance.Type: ApplicationFiled: January 2, 2025Publication date: May 22, 2025Applicant: ZHEJIANG FENGHONG NEW MATERIALS CO., LTDInventors: Jun LUO, Jinling LIU, Tianyu JIANG, Qi HUA, Guokai CUI, Lin XU, Pengjun ZHANG, Chengfeng LI, Jingjing LI, Hong SUN, Zexiong ZHOU
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Publication number: 20250149207Abstract: A large-tonnage disc-shaped suspension ceramic insulator includes a ceramic insulator body, and a metal pin and a metal cap coaxially assembled with the ceramic insulator body through adhesive material, assembly interfaces of the ceramic insulator body, the metal cap, and the metal pin are coated with a primer; the adhesive material includes an expansion agent; and the expansion agent is configured to make the adhesive material expand after hardening so as to create a prestress between the ceramic insulator body and the metal pin as well as the metal cap. The present disclosure achieves overall compressive prestress distribution of the ceramic insulator product, mitigating thermal stress caused by temperature changes and improving the tensile strength of the large-tonnage disc-shaped suspension ceramic insulator assembly. By treating the assembly interfaces with the primer, the present disclosure significantly improves the assembly strength of the ceramic insulator/metal assembly.Type: ApplicationFiled: January 12, 2025Publication date: May 8, 2025Applicants: CHAOHU UNIVERSITY, PINGXIANG BEST INSULATOR GROUP CO., LTDInventors: Xiaoyong XU, Jiasheng LIU, Hui WEI, Fenping CHEN, Lin XU, Linmin XU, Zhiying ZHOU, Jianguo DENG, Minghua LIU
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Publication number: 20250142959Abstract: The present application provides a semiconductor device, a method for manufacturing a semiconductor device, and an electronic device. Two semiconductor layers having different carrier mobilities are provided, the semiconductor layer having a lower carrier mobility covers the semiconductor layer having a higher carrier mobility, and the semiconductor layer having a higher carrier mobility is located within the coverage area of a first electrode.Type: ApplicationFiled: January 2, 2025Publication date: May 1, 2025Applicants: Yungu (Gu’an) Technology Co., Ltd., Hefei Visionox Technology Co., Ltd.Inventors: Lidong DING, Lin XU, Xiaoqi SUN, Guowen YAN, Dejian WANG, Fa-Hsyang CHEN
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Publication number: 20250140528Abstract: A component of a plasma processing chamber is provided. A yttria coating is formed on a surface of a component body, wherein the yttria coating is deposited by aerosol deposition and is annealed, wherein the yttria coating is at least 95% pure yttria by weight.Type: ApplicationFiled: May 17, 2023Publication date: May 1, 2025Inventors: Jeremiah Michael DEDERICK, Satish SRINIVASAN, Lin XU, John DAUGHERTY
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Publication number: 20250133796Abstract: A SiC trench MOSFET with an embedded junction Schottky barrier diode (JBSD) having P-shield (PS) regions surrounding bottoms of source-body-Schottky contact (SBSC) trenches for gate oxide electric-field and switching loss reductions is disclosed. A source metal connects with the PS regions and the JBSD directly. Sidewall P (SP) regions are formed along a portion of sidewalls of the SBSC trenches to improve a tradeoff between a drain-source leakage current of the SiC trench MOSFET and a forward voltage of the JBSD. The device further comprises an N-type shield region formed below each of gate trenches for gate oxide electric field strength and specific on-resistance reductions.Type: ApplicationFiled: October 24, 2023Publication date: April 24, 2025Applicant: Nami MOS CO., LTD.Inventors: FU-YUAN HSIEH, LIN XU
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Publication number: 20250102663Abstract: A multi-sensor fusion method and system for intelligent driving vehicles are provided, which relate to the technical field of intelligent driving vehicles. The method includes: establishing an extended target tracker based on a GM-PHD algorithm and a rectangular target model of a detected object; processing detection information of a millimeter-wave radar by using the extended target tracker to obtain millimeter-wave radar track information of the detected object; processing detection information of a laser radar by using the established bounding-box detector and a JPDA tracker provided with an IMM-UKF to obtain laser-radar track information of the detected object; processing the millimeter-wave radar track information and the laser-radar track information by performing time-space conversion to obtain a central fusion node; and processing the central fusion node by using an IMF algorithm to obtain global track information.Type: ApplicationFiled: May 26, 2023Publication date: March 27, 2025Applicant: CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONSInventors: Junren SHI, Jun GAO, Changhao PIAO, Lin XU, Weisheng HE, Jianguo MIAO, Kexin LI, Yongkang SU
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Patent number: 12259932Abstract: A website misclassification report is received. A determination is made that a current classification model correctly classifies a website. The current classification model is different from a model that was previously used to classify the website. In response to a determination that the website is correctly classified by the current classification model, a reclassification operation is performed, using the current classification model, on a second website.Type: GrantFiled: August 3, 2021Date of Patent: March 25, 2025Assignee: Palo Alto Networks, Inc.Inventors: Lei Zhang, Lin Xu, Seokkyung Chung, Xunhua Tong
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Publication number: 20250089344Abstract: A thin film transistor and a preparation method thereof, a display panel, and a display device. The thin film transistor includes an active structure and a gate that are stacked and insulated by an interlayer insulating layer, the active structure includes a source region, a drain region, and a channel region, the source region and the drain region are located on two sides of the channel region, and in a thickness direction of the interlayer insulating layer, a projection of the gate overlaps with a projection of the channel region; wherein the channel region includes a metal oxide material, a ratio of a number of indium atoms and a number of zinc atoms in the channel region is a, and a?4.Type: ApplicationFiled: November 25, 2024Publication date: March 13, 2025Applicants: Yungu (Gu’an) Technology Co., Ltd., Hefei Visionox Technology Co., Ltd.Inventors: Xiaoqi SUN, Guowen YAN, Lidong DING, Fa-Hsyang CHEN, Lin XU, Dejian WANG
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Patent number: 12249490Abstract: A component of a plasma processing chamber having at least one plasma facing surface of the component comprises single crystal metal oxide material. The component can be machined from a single crystal metal oxide ingot. Suitable single crystal metal oxides include spinel, yttrium oxide, and yttrium aluminum garnet (YAG). A single crystal metal oxide can be machined to form a gas injector of a plasma processing chamber.Type: GrantFiled: October 21, 2020Date of Patent: March 11, 2025Assignee: Lam Research CorporationInventors: Lin Xu, Douglas Detert, John Daugherty, Pankaj Hazarika, Satish Srinivasan, Nash W. Anderson, John Michael Kerns, Robin Koshy, David Joseph Wetzel, Lei Liu, Eric A. Pape
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Publication number: 20250081538Abstract: The disclosure relates to the field of display technologies, and in particular, to a thin film transistor, a display panel, and a display apparatus. The thin film transistor includes: an active layer provided on a substrate. The active layer includes a first semiconductor layer, a first barrier layer, and a second semiconductor layer stacked in sequence. The first semiconductor layer is located on a side, away from the substrate, of the second semiconductor layer, and a mobility rate of the first semiconductor layer is less than a mobility rate of the second semiconductor layer. A double channel is formed by providing the first barrier layer provided between the first semiconductor layer and the second semiconductor layer, so as to make a threshold voltage Vth positive and improve the mobility rate of the thin film transistor, so that a greater processing Margin may be accommodated, thereby ensuring stability of a device.Type: ApplicationFiled: November 20, 2024Publication date: March 6, 2025Applicants: Hefei Visionox Technology Co., Ltd., Yungu (Gu’an) Technology Co., Ltd.Inventors: Guowen YAN, Dejian WANG, Xiaoqi SUN, Lin XU, Fa-Hsyang CHEN
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Publication number: 20250063774Abstract: An improved SiC trench MOSFET having N-type and P-type shield zones for gate oxide electric-field reduction is disclosed. The N-type shield zones are formed below a gate electrode and the P-type shield zones adjoin lower surfaces of the body regions. The device further comprises a current spreading region surrounding at least sidewalls of the gate trenches for on-resistance reduction.Type: ApplicationFiled: August 15, 2023Publication date: February 20, 2025Applicants: Nami MOS CO., LTD., Shenzhen Puolop Electronics Co., LtdInventors: FU-YUAN HSIEH, LIN XU
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Patent number: 12217163Abstract: Methods and systems for budgeted and simplified training of deep neural networks (DNNs) are disclosed. In one example, a trainer is to train a DNN using a plurality of training sub-images derived from a down-sampled training image. A tester is to test the trained DNN using a plurality of testing sub-images derived from a down-sampled testing image. In another example, in a recurrent deep Q-network (RDQN) having a local attention mechanism located between a convolutional neural network (CNN) and a long-short time memory (LSTM), a plurality of feature maps are generated by the CNN from an input image. Hard-attention is applied by the local attention mechanism to the generated plurality of feature maps by selecting a subset of the generated feature maps. Soft attention is applied by the local attention mechanism to the selected subset of generated feature maps by providing weights to the selected subset of generated feature maps in obtaining weighted feature maps.Type: GrantFiled: September 22, 2023Date of Patent: February 4, 2025Assignee: Intel CorporationInventors: Yiwen Guo, Yuqing Hou, Anbang Yao, Dongqi Cai, Lin Xu, Ping Hu, Shandong Wang, Wenhua Cheng, Yurong Chen, Libin Wang
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Patent number: 12198902Abstract: An apparatus adapted for use in a plasma processing chamber is provided. An aluminum body with at least one surface is provided. An aluminum oxide containing aerosol deposition coating is disposed over the at least one surface of the aluminum body. An yttrium containing aerosol deposition coating is disposed over the aluminum oxide containing aerosol deposition coating.Type: GrantFiled: March 3, 2020Date of Patent: January 14, 2025Assignee: Lam Research CorporationInventors: Lin Xu, John Daugherty, Satish Srinivasan, David Joseph Wetzel
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Publication number: 20250004506Abstract: An electronic device includes a first body, a second body, and a linkage control assembly. The linkage control assembly includes a rotation shaft, a position-limiting linkage member, and a position-limiting mating member. The rotation shaft is configured to rotatably connect the first body and the second body. The position-limiting linkage member is arranged at the rotation shaft. The position-limiting mating member is arranged at a side of the rotation shaft close to the first body. The position-limiting linkage member is configured to cooperate with the position-limiting mating member to perform position-limiting on the rotation angle of the second body. The position-limiting linkage member rotates based on an extension length and/or a weight increase value along a first direction. The position-limiting linkage member rotates along a second direction based on the retraction length of the second body and/or a weight decrease value.Type: ApplicationFiled: May 22, 2024Publication date: January 2, 2025Inventors: Lin XU, Zhiliang LV, Xiaoxiao WU