Abstract: The present disclosure provides a fusion protein comprising a fucosidase or a truncated fragment or a mutant thereof fuses with either N-terminal end or C-terminal end of the endoglycosidase or a truncated fragment of mutant thereof. The present disclosure also provides a nucleic acid molecule expressing the fusion protein and a method for remodeling a glycan of an antibody Fc region.

Abstract: The present disclosure provides a fusion protein comprising a fucosidase or a truncated fragment or a mutant thereof fuses with either N-terminal end or C-terminal end of the endoglycosidase or a truncated fragment of mutant thereof. The present disclosure also provides a nucleic acid molecule expressing the fusion protein and a method for remodeling a glycan of an antibody Fc region.

Abstract: A mutant of EndoS2 includes one or more mutations in the sequence of a wild-type EndoS2 (SEQ ID NO:1), wherein the one or more mutations are in a peptide region located within residues 133-143, residues 177-182, residues 184-189, residues 221-231, and/or residues 227-237, wherein the mutant of EndoS2 has a low hydrolyzing activity and a high tranglycosylation activity, as compared to those of the wild-type EndoS2. A method for preparing an engineered glycoprotein using the mutant of EndoS2 includes coupling an activated oligosaccharide to a glycoprotein acceptor. The activated oligosaccharide is a glycan oxazoline.

Abstract: A mutant of Endos2 includes one or more mutations in the sequence of a wild-type EndoS2 (SEQ ID NO:1), wherein the one or more mutations are in a peptide region located within residues 133-143, residues 177-182, residues 184-189, residues 221-231, and/or residues 227-237, wherein the mutant of EndoS2 has a low hydrolyzing activity and a high tranglycosylation activity, as compared to those of the wild-type EndoS2. A method for preparing an engineered glycoprotein using the mutant of EndoS2 includes coupling an activated oligosaccharide to a glycoprotein acceptor. The activated oligosaccharide is a glycan oxazoline.

Abstract: A mutant of EndoS2 includes one or more mutations in the sequence of a wild-type EndoS2 (SEQ ID NO: 1), wherein the one or more mutations are in a peptide region located within residues 133-143, residues 177-182, residues 184-189, residues 221-231, and/or residues 227-237, wherein the mutant of EndoS2 has a low hydrolyzing activity and a high tranglycosylation activity, as compared to those of the wild-type EndoS2. A method for preparing an engineered glycoprotein using the mutant of EndoS2 includes coupling an activated oligosaccharide to a glycoprotein acceptor. The activated oligosaccharide is a glycan oxazoline.

Abstract: A mutant of EndoS2 includes one or more mutations in the sequence of a wild-type EndoS2 (SEQ ID NO: 1), wherein the one or more mutations are in a peptide region located within residues 133-143, residues 177-182, residues 184-189, residues 221-231, and/or residues 227-237, wherein the mutant of EndoS2 has a low hydrolyzing activity and a high tranglycosylation activity, as compared to those of the wild-type EndoS2. A method for preparing an engineered glycoprotein using the mutant of EndoS2 includes coupling an activated oligosaccharide to a glycoprotein acceptor. The activated oligosaccharide is a glycan oxazoline.

Abstract: The present disclosure relates to a method to form a plurality of openings within a substrate with a single photo exposure and a single etch process. A photoresist layer is disposed over a substrate and aligned with a photomask, wherein the photomask comprises a transparent area, a grayscale area, and an opaque area. The photomask and substrate are exposed to radiation comprising a single illumination step to form a first 3-dimensional pattern within the photoresist layer. The 3-dimensional pattern comprises a first opening comprising a first thickness formed by transmitting the radiation through the transparent area with full intensity, and a second opening comprising a second thickness formed by transmitting the radiation through the grayscale area with partial intensity. The 3-dimensional pattern is transferred to form a plurality of openings of varying depths within the substrate through a single etch step.

Abstract: The present disclosure relates to a method to form a plurality of openings within a substrate with a single photo exposure and a single etch process. A photoresist layer is disposed over a substrate and aligned with a photomask, wherein the photomask comprises a transparent area, a grayscale area, and an opaque area. The photomask and substrate are exposed to radiation comprising a single illumination step to form a first 3-dimensional pattern within the photoresist layer. The 3-dimensional pattern comprises a first opening comprising a first thickness formed by transmitting the radiation through the transparent area with full intensity, and a second opening comprising a second thickness formed by transmitting the radiation through the grayscale area with partial intensity. The 3-dimensional pattern is transferred to form a plurality of openings of varying depths within the substrate through a single etch step.

Abstract: A method, and an apparatus formed thereby, to construct shallow recessed wells on top of exposed conductive vias on the surface of a semiconductor. The shallow recessed wells are subsequently filled with a conductive cap layer, such as a tantalum nitride (TaN) layer, to prevent or reduce oxidation which may otherwise occur naturally when exposed to air, or possibly occur during an under-bump metallization process.

Abstract: A method, and an apparatus formed thereby, to construct shallow recessed wells on top of exposed conductive vias on the surface of a semiconductor. The shallow recessed wells are subsequently filled with a conductive cap layer, such as a tantalum nitride (TaN) layer, to prevent or reduce oxidation which may otherwise occur naturally when exposed to air, or possibly occur during an under-bump metallization process.