Abstract: A walking power control system for wolfberry picking, including a frame, a turntable, rotating rods, first gears, second gear, gear racks, supporting rods, hydraulic motors, a front traveling wheel, a left traveling wheel and a right traveling wheel. Hydraulic motors rotate to drives three traveling wheels to rotate, thereby driving the frame to move, when it is necessary to turn, a turntable is rotated, the turntable rotates to drive two first gears to rotate, and the two first gears rotate to drive the supporting rods to rotate, thereby driving the left traveling wheel and the right traveling wheel to rotate, so that the traveling direction of the frame is changed.

Abstract: A locating method and apparatus for a robot, and a computer-readable storage medium. The locating method includes: determining current possible pose information of the robot according to current ranging data collected by a ranging unit; determining, according to first current image data collected by an image collection unit, first historical image data matching with the first current image data, the first historical image data being collected by the image collection unit at a historical moment; obtaining first historical pose information of the robot at a moment when the first historical image data is collected; and in response to quantity of the current possible pose information being at least two pieces, matching the first historical pose information with each piece of the current possible pose information, and using matched current possible pose information as current target pose information.

Abstract: This invention provides a preparation method of a catalyst for preferential oxidization of CO in a hydrogen-enriched atmosphere, and a catalyst product obtained from the method and its applications thereof. Particularly, in this invention, a wide-temperature catalyst for preferential oxidization of CO in a hydrogen-enriched atmosphere is obtained by depositing one or more of an iron oxide, cobalt oxide, and nickel oxide as a promoter onto the surface of a supported Pt-group noble metal catalyst precursor via chemical vapor deposition or atomic layer deposition. In the wide-temperature catalyst, the active noble metal component has a content of 0.1 to 10 wt %, and the promoter has a content of 0.1 to 10 wt % in terms of the metal element thereof.

Abstract: This invention provides a preparation method of a catalyst for preferential oxidization of CO in a hydrogen-enriched atmosphere, and a catalyst product obtained from the method and its applications thereof. Particularly, in this invention, a wide-temperature catalyst for preferential oxidization of CO in a hydrogen-enriched atmosphere is obtained by depositing one or more of an iron oxide, cobalt oxide, and nickel oxide as a promoter onto the surface of a supported Pt-group noble metal catalyst precursor via chemical vapor deposition or atomic layer deposition. In the wide-temperature catalyst, the active noble metal component has a content of 0.1 to 10 wt %, and the promoter has a content of 0.1 to 10 wt % in terms of the metal element thereof.

Abstract: A tunnel field-effect transistor device includes a p-type GaN source layer, an ntype GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. These devices employ polarization engineering in GaN/InN heterojunctions to achieve appreciable interband tunneling current densities. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InxGa1-xN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration. In one example, the tunnel field-effect transistor device includes a nanowire cylindrical gate-all-around geometry to achieve a high degree of gate electrostatic control.

Abstract: A tunnel field-effect transistor device includes a p-type GaN source layer, an ntype GaN drain layer, and an interlayer interfaced between the source-layer and the drain layer. These devices employ polarization engineering in GaN/InN heterojunctions to achieve appreciable interband tunneling current densities. In one example, the interlayer includes an Indium Nitride (InN) layer. In one example, the interlayer includes a graded Indium gallium nitride layer and an InN layer. In one example, the interlayer may include a graded Indium gallium nitride (InxGa1-xN) layer and an Indium gallium nitride (InGaN) layer. In one example, the tunnel field-effect transistor device includes an in-line configuration. In one example, the tunnel field-effect transistor device includes a side-wall configuration. In one example, the tunnel field-effect transistor device includes a nanowire cylindrical gate-all-around geometry to achieve a high degree of gate electrostatic control.

Abstract: An apparatus has an input surface configured to receive energy emitted from an energy source in a first mode. A mode order converter is configured to convert the energy from the first mode to a second mode. The waveguide of the apparatus has an input end disposed proximate the input surface and configured to receive the energy in the first mode. The waveguide has an output end disposed proximate a media-facing surface and configured to deliver energy in the second mode. The output end is at an oblique angle to a cross-track line at an intersection of the media-facing surface and a substrate-parallel plane.

Abstract: An apparatus has an input surface configured to receive energy emitted from an energy source in a first mode. A mode order converter is configured to convert the energy from the first mode to a second mode. The waveguide of the apparatus has an input end disposed proximate the input surface and configured to receive the energy in the first mode. The waveguide has an output end disposed proximate a media-facing surface and configured to deliver energy in the second mode. The output end is at an oblique angle to a cross-track line at an intersection of the media-facing surface and a substrate-parallel plane.

Abstract: Disclosed are plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The disclosed plasmonic near-field transducers have an enlarged region and a flared region. In some embodiments the disclosed plasmonic near-field transducer can also include a peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg region of the near-field transducer, thus reducing its temperature. Also disclosed are methods that include delivering light to a magnetic transducer region via a waveguide, receiving the light at a plasmonic near-field transducer having an output end and disposed in proximity to the magnetic transducer region, and delivering a surface plasmon-enhanced near-field radiation pattern proximate the output end of the plasmonic transducer in response to receiving the light.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer includes an aperture surrounded by walls of plasmonic material and a notch protruding within the aperture. The walls are oriented normal to the media-facing surface. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture. A heat sink layer of the plasmonic material is disposed along the back surface and the aperture-facing surface of the write pole. The heat sink layer is thermally and optically coupled to the near-field transducer.

Abstract: A recording head includes a near-field transducer proximate a media-facing surface. The near-field transducer includes an aperture surrounded by walls of plasmonic material and a notch protruding within the aperture. The walls are oriented normal to the media-facing surface. A write pole is proximate the near-field transducer. The write pole has a back surface facing away from the media-facing surface and an aperture-facing surface proximate the aperture. A heat sink layer of the plasmonic material is disposed along the back surface and the aperture-facing surface of the write pole. The heat sink layer is thermally and optically coupled to the near-field transducer.

Abstract: Disclosed are plasmonic near-field transducers that are useful in heat-assisted magnetic recording. The disclosed plasmonic near-field transducers have an enlarged region and a flared region. In some embodiments the disclosed plasmonic near-field transducer can also include a peg region. The flared region can act as a heat sink and can lower the thermal resistance of the peg region of the near-field transducer, thus reducing its temperature.