Abstract: The application relates to a strongly-polarized molecule of the following general formula: wherein A denotes a group having a polarizability greater than 2 C·m2/V; R1 and R2 are respectively hydrogen, halogen, a hydroxyl group, an amino group, a cyano group, a nitro group, a carboxyl group, a C1-12 alkyl group, a C1-12 alkoxy group, a halogenated C1-12 alkyl group, a halogenated C1-12 alkoxy group, a hydroxyl C1-12 alkyl group, a hydroxyl C1-12 alkoxy group, or a C1-12 alkyl amino group; x1 and x2 denote 0 or an integer no less than 1, respectively; and y1 and y2 denote 0 or an integer no less than 1, respectively. The application further relates to a strongly-polarized molecule-graphene molecule heterojunction, and a single molecule field effect transistor comprising a substrate, a gate, a dielectric layer and the strongly-polarized molecule-graphene molecule heterojunction; and the dielectric layer is located between the gate and the strongly-polarized molecule-graphene molecule heterojunction.

Abstract: The application relates to a strongly-polarized molecule of the following general formula: wherein A denotes a group having a polarizability greater than 2 C·m2/V; R1 and R2 are respectively hydrogen, halogen, a hydroxyl group, an amino group, a cyano group, a nitro group, a carboxyl group, a C1-12 alkyl group, a C1-12 alkoxy group, a halogenated C1-12 alkyl group, a halogenated C1-12 alkoxy group, a hydroxyl C1-12 alkyl group, a hydroxyl C1-12 alkoxy group, or a C1-12 alkyl amino group; x1 and x2 denote 0 or an integer no less than 1, respectively; and y1 and y2 denote 0 or an integer no less than 1, respectively. The application further relates to a strongly-polarized molecule-graphene molecule heterojunction, and a single molecule field effect transistor comprising a substrate, a gate, a dielectric layer and the strongly-polarized molecule-graphene molecule heterojunction; and the dielectric layer is located between the gate and the strongly-polarized molecule-graphene molecule heterojuction.