Patents by Inventor Linchang ZHONG

Linchang ZHONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11489052
    Abstract: The present disclosure provides a thin film transistor, a manufacturing method of the thin film transistor and a display device, configured to improve electrical property of the thin film transistor. The thin film transistor includes: an active layer, including a source and drain contact region and a channel region; a metal barrier layer, covering the source and drain contact region; a first gate insulating layer, at least covering the channel region and exposing the metal barrier layer; a gate, on the first gate insulating layer and covering the channel region; an inner layer dielectric layer, on the gate and having a through hole exposing the metal barrier layer; and a source and drain, on the inner layer dielectric layer and in contact with the metal barrier layer through the through hole.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: November 1, 2022
    Assignees: Mianyang Boe Optoelectronics Technology Co., Ltd., Beijing BOE Technology Development Co., Ltd.
    Inventors: Wenhui Liu, Linchang Zhong
  • Publication number: 20210234011
    Abstract: The present disclosure provides a thin film transistor, a manufacturing method of the thin film transistor and a display device, configured to improve electrical property of the thin film transistor. The thin film transistor includes: an active layer, including a source and drain contact region and a channel region; a metal barrier layer, covering the source and drain contact region; a first gate insulating layer, at least covering the channel region and exposing the metal barrier layer; a gate, on the first gate insulating layer and covering the channel region; an inner layer dielectric layer, on the gate and having a through hole exposing the metal barrier layer; and a source and drain, on the inner layer dielectric layer and in contact with the metal barrier layer through the through hole.
    Type: Application
    Filed: December 17, 2019
    Publication date: July 29, 2021
    Inventors: Wenhui LIU, Linchang ZHONG