Abstract: A system and method for performing in-situ measurements of semiconductor devices during chemical vapor deposition (CVD) includes disposing a chip carrier within a sealed chamber of a reactor for carrying out in-situ monitoring of partially fabricated semiconductor devices. The chip carrier includes a plurality of metallized bonding pads disposed along both peripheral edges on a same surface of the base for making electrical connections to metallized pads or contacts on the semiconductor device through bonding wires. Each of the plurality of metallized bonding pads disposed along both peripheral edges is electrically connected to each other as a pair through electrically connecting to a corresponding pair of ports which are disposed along both peripheral edges of the chip carrier. In-situ monitoring of the partially fabricated semiconductor device is performed through connecting the plurality of ports on the chip carrier to an external source-measure unit through a connector and wire harness.

Abstract: A system and method for performing in-situ measurements of semiconductor devices during chemical vapor deposition (CVD) includes disposing a chip carrier within a sealed chamber of a reactor for carrying out in-situ monitoring of partially fabricated semiconductor devices. The chip carrier includes a plurality of metallized bonding pads disposed along both peripheral edges on a same surface of the base for making electrical connections to metallized pads or contacts on the semiconductor device through bonding wires. Each of the plurality of metallized bonding pads disposed along both peripheral edges is electrically connected to each other as a pair through electrically connecting to a corresponding pair of ports which are disposed along both peripheral edges of the chip carrier. In-situ monitoring of the partially fabricated semiconductor device is performed through connecting the plurality of ports on the chip carrier to an external source-measure unit through a connector and wire harness.

Abstract: In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.

Abstract: In one aspect of the invention, the memristor includes a monolayer film formed of an atomically thin material, where the monolayer film has at least one grain boundary (GB), a first electrode and a second electrode electrically coupled with the monolayer film to define a memristor channel therebetween, such that the at least one GB is located in the memristor channel, and a gate electrode capacitively coupled with the memristor channel.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.

Abstract: The present invention relates generally to sub-microelectronic circuitry, and more particularly to nanometer-scale articles, including nanoscale wires which can be selectively doped at various locations and at various levels. In some cases, the articles may be single crystals. The nanoscale wires can be doped, for example, differentially along their length, or radially, and either in terms of identity of dopant, concentration of dopant, or both. This may be used to provide both n-type and p-type conductivity in a single item, or in different items in close proximity to each other, such as in a crossbar array. The fabrication and growth of such articles is described, and the arrangement of such articles to fabricate electronic, optoelectronic, or spintronic devices and components.