Abstract: A process for forming a layer of a metallurgy interconnection system on a substrate. The process involves forming a first electrically insulative layer of an organic polymerized resin material on the substrate, forming a second thin layer on the first layer which is resistant to dry etching conditions which are effective to etch the first layer, depositing a photoresist layer on the second layer, exposing the photoresist to form an inverse pattern of a desired metallurgy pattern and developing the photoresist, reactive ion etching the resultant exposed areas of the first and second layers, depositing a blanket continuous conductive metal layer over the hills and valleys of the pattern resulting from reactive ion etching, applying a planarizing photoresist layer, etching the photoresist to expose high spots of the metal layer, and etching the metal high spots to a depth sufficient to expose the surface of the second layer.