Abstract: The disclosure relates to a glass and a melt solder for the passivation of semiconductor components, the use of the glass or the melt solder for the passivation of semiconductor components, a passivated semiconductor component and a method for passivating semiconductor components.

Abstract: The disclosure relates to a glass and a melt solder for the passivation of semiconductor components, the use of the glass or the melt solder for the passivation of semiconductor components, a passivated semiconductor component and a method for passivating semiconductor components.

Abstract: The disclosure relates to a glass and a melt solder for the passivation of semiconductor components, the use of the glass or the melt solder for the passivation of semiconductor components, a passivated semiconductor component and a method for passivating semiconductor components.

Abstract: The disclosure relates to a glass and a melt solder for the passivation of semiconductor components, the use of the glass or the melt solder for the passivation of semiconductor components, a passivated semiconductor component and a method for passivating semiconductor components.

Abstract: The present disclosure relates to a bonding glass which has improved water resistance and has a coefficient of thermal expansion ?(25-300) of from 14·10?6K?1 to 17·10?6K?1, comprising, in mol % on an oxide basis, 5-7 of B2O3, 10-14 of Al2O3, 36-43 of P2O5, 15-22 of Na2O, 12.5-20 of K2O, 2-6 of Bi2O3 and >0-6 of R oxide, where R oxide is an oxide selected from the group consisting of MnO2 and SiO2 and SnO2 and Ta2O5 and Nb2O5 and Fe2O3 and GeO2 and CaO. The bonding glass is free of PbO except for, at most, impurities. The bonding glass may have a glass transition temperature Tg of from 390° C. to 430° C. The present disclosure also relates to uses of this bonding glass.

Abstract: The present disclosure relates to a bonding glass which has improved water resistance and has a coefficient of thermal expansion ?(25-300) of from 14·10?6K?1 to 17·10?6K?1, comprising, in mol % on an oxide basis, 5-7 of B2O3, 10-14 of Al2O3, 36-43 of P2O5, 15-22 of Na2O, 12.5-20 of K2O, 2-6 of Bi2O3 and >0-6 of R oxide, where R oxide is an oxide selected from the group consisting of MnO2 and SiO2 and SnO2 and Ta2O5 and Nb2O5 and Fe2O3 and GeO2 and CaO. The bonding glass is free of PbO except for, at most, impurities. The bonding glass may have a glass transition temperature Tg of from 390° C. to 430° C. The present disclosure also relates to uses of this bonding glass.

Abstract: A feed-through, in particular a feed-through which passes through part of a housing, in particular a battery housing, for example made of metal, in particular light metal, for example aluminum, an aluminum alloy, AlSiC, magnesium, an magnesium alloy, titanium, a titanium alloy, steel, stainless steel or high-grade steel. The housing part has at least one opening through which at least one conductor, in particular an essentially pin-shaped conductor, embedded in a glass or glass ceramic material, is guided. The base body is, for example, an essentially annular-shaped base body and is hermetically sealed with the housing part such that the helium leakage rate is smaller than 1*10?8 mbar l/sec.

Abstract: A feed-through, in particular a feed-through which passes through part of a housing, in particular a battery housing, for example made of metal, in particular light metal, for example aluminum, an aluminum alloy, AlSiC, magnesium, an magnesium alloy, titanium, a titanium alloy, steel, stainless steel or high-grade steel. The housing part has at least one opening through which at least one conductor, in particular an essentially pin-shaped conductor, embedded in a glass or glass ceramic material, is guided. The base body is, for example, an essentially annular-shaped base body and is hermetically sealed with the housing part such that the helium leakage rate is smaller than 1*10?8 mbar l/sec.