Patents by Inventor Linda K. Sun

Linda K. Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10944256
    Abstract: Some embodiments include apparatuses having an electrostatic discharge (ESD) protection circuit coupled to a node, and first, second, and third circuits coupled to the node. The first circuit includes a first charge pump to cause a voltage at the node during activation of the first circuit to change from a first voltage value to a second voltage value within first multiple periods of a clock signal, the second voltage value being less than the first voltage value. The second includes a second charge pump to cause a voltage at the node during activation of the second circuit to change from a third voltage value to a fourth voltage value during second multiple periods of the clock signal, the fourth voltage value being greater than the third voltage value. The third circuit generates information based on the values of the voltage at the node during activation of the first and second circuits. The apparatuses optionally include a fourth circuit to generate an additional voltage at an additional node.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: March 9, 2021
    Assignee: Intel Corporation
    Inventors: Harry Muljono, Horaira Abu, Linda K. Sun
  • Patent number: 10812075
    Abstract: An apparatus includes a terminal, a first device coupled to the terminal via a first node, the first device to drive a signal on the terminal via the first node, and a second device coupled to the terminal via a second node, wherein the second device comprises a dynamic on-die termination (ODT) circuit coupled to the second node. The dynamic ODT circuit includes: a bus holder circuit to receive the signal from the first device at the second node and select a termination voltage based on the signal, a response delay circuit coupled to the bus holder circuit, the response delay circuit to delay application of the termination voltage to the second node, and a time blanking delay circuit coupled to the bus holder circuit and the response delay circuit to prevent the termination voltage from changing before a threshold period of time elapses.
    Type: Grant
    Filed: May 20, 2019
    Date of Patent: October 20, 2020
    Assignee: Intel Corporation
    Inventors: Harry Muljono, Linda K. Sun, Maria Jose Garcia Garcia de Leon, Raul Enriquez Shibayama, Abraham Isidoro Munoz, Carlos Eduardo Lozoya Lopez
  • Publication number: 20190305549
    Abstract: Some embodiments include apparatuses having an electrostatic discharge (ESD) protection circuit coupled to a node, and first, second, and third circuits coupled to the node. The first circuit includes a first charge pump to cause a voltage at the node during activation of the first circuit to change from a first voltage value to a second voltage value within first multiple periods of a clock signal, the second voltage value being less than the first voltage value. The second includes a second charge pump to cause a voltage at the node during activation of the second circuit to change from a third voltage value to a fourth voltage value during second multiple periods of the clock signal, the fourth voltage value being greater than the third voltage value. The third circuit generates information based on the values of the voltage at the node during activation of the first and second circuits. The apparatuses optionally include a fourth circuit to generate an additional voltage at an additional node.
    Type: Application
    Filed: March 29, 2018
    Publication date: October 3, 2019
    Inventors: Harry Muljono, Horaira Abu, Linda K. Sun
  • Publication number: 20190280691
    Abstract: An apparatus includes a terminal, a first device coupled to the terminal via a first node, the first device to drive a signal on the terminal via the first node, and a second device coupled to the terminal via a second node, wherein the second device comprises a dynamic on-die termination (ODT) circuit coupled to the second node. The dynamic ODT circuit includes: a bus holder circuit to receive the signal from the first device at the second node and select a termination voltage based on the signal, a response delay circuit coupled to the bus holder circuit, the response delay circuit to delay application of the termination voltage to the second node, and a time blanking delay circuit coupled to the bus holder circuit and the response delay circuit to prevent the termination voltage from changing before a threshold period of time elapses.
    Type: Application
    Filed: May 20, 2019
    Publication date: September 12, 2019
    Applicant: Intel Corporation
    Inventors: Harry Muljono, Linda K. Sun, Maria Jose Garcia Garcia de Leon, Raul Enriquez Shibayama, Abraham Isidoro Munoz, Carlos Eduardo Lozoya Lopez
  • Patent number: 10324124
    Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.
    Type: Grant
    Filed: June 16, 2015
    Date of Patent: June 18, 2019
    Assignee: Intel Corporation
    Inventors: Linda K. Sun, Harry Muljono
  • Patent number: 9910484
    Abstract: Embodiments including systems, methods, and apparatuses associated with increasing the power efficiency of one or more components of a computing system. Specifically, the system may include a processor chip which may include an on-die voltage regulator (VR) configured to supply a voltage to a component of the processor chip. The processor chip may be coupled with a dynamic random access memory (DRAM). The system may further include an external VR coupled with the DRAM. A BIOS may be configured to regulate the voltage output of one or both of the on-die VR and/or the external VR. Other embodiments may be described or claimed.
    Type: Grant
    Filed: November 26, 2013
    Date of Patent: March 6, 2018
    Assignee: Intel Corporation
    Inventors: Harry Muljono, Linda K. Sun
  • Patent number: 9335933
    Abstract: Described are systems and apparatuses to mitigate the timing margin loss caused by inter-symbol interference (ISI) in high speed input/output (I/O) interfaces. Data dependent jitter (DDJ) compensation techniques that may be utilized in the transmission or receiving circuitry of the I/O interface, including capturing bit data values of a data signal prior to an identified data transition, and delaying/advancing the transmission/reception the data signal or a corresponding clock signal based on these bit data values.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: May 10, 2016
    Assignee: Intel Corporation
    Inventors: Harry Muljono, Charlie Lin, Kai Xiao, Linda K. Sun
  • Publication number: 20150276857
    Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.
    Type: Application
    Filed: June 16, 2015
    Publication date: October 1, 2015
    Inventors: Linda K. Sun, Harry Muljono
  • Patent number: 9093412
    Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: July 28, 2015
    Assignee: Intel Corporation
    Inventors: Linda K. Sun, Harry Muljono
  • Publication number: 20150188732
    Abstract: Described are systems and apparatuses to mitigate the timing margin loss caused by inter-symbol interference (ISI) in high speed input/output (I/O) interfaces. Data dependent jitter (DDJ) compensation techniques that may be utilized in the transmission or receiving circuitry of the I/O interface, including capturing bit data values of a data signal prior to an identified data transition, and delaying/advancing the transmission/reception the data signal or a corresponding clock signal based on these bit data values.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 2, 2015
    Inventors: Harry MULJONO, Charlie LIN, Kai XIAO, Linda K. SUN
  • Publication number: 20150149796
    Abstract: Embodiments including systems, methods, and apparatuses associated with increasing the power efficiency of one or more components of a computing system. Specifically, the system may include a processor chip which may include an on-die voltage regulator (VR) configured to supply a voltage to a component of the processor chip. The processor chip may be coupled with a dynamic random access memory (DRAM). The system may further include an external VR coupled with the DRAM. A BIOS may be configured to regulate the voltage output of one or both of the on-die VR and/or the external VR. Other embodiments may be described or claimed.
    Type: Application
    Filed: November 26, 2013
    Publication date: May 28, 2015
    Inventors: Harry Muljono, Linda K. Sun
  • Publication number: 20130154677
    Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.
    Type: Application
    Filed: December 20, 2011
    Publication date: June 20, 2013
    Inventors: Linda K. Sun, Harry Muljono