Patents by Inventor Linda K. Sun
Linda K. Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10944256Abstract: Some embodiments include apparatuses having an electrostatic discharge (ESD) protection circuit coupled to a node, and first, second, and third circuits coupled to the node. The first circuit includes a first charge pump to cause a voltage at the node during activation of the first circuit to change from a first voltage value to a second voltage value within first multiple periods of a clock signal, the second voltage value being less than the first voltage value. The second includes a second charge pump to cause a voltage at the node during activation of the second circuit to change from a third voltage value to a fourth voltage value during second multiple periods of the clock signal, the fourth voltage value being greater than the third voltage value. The third circuit generates information based on the values of the voltage at the node during activation of the first and second circuits. The apparatuses optionally include a fourth circuit to generate an additional voltage at an additional node.Type: GrantFiled: March 29, 2018Date of Patent: March 9, 2021Assignee: Intel CorporationInventors: Harry Muljono, Horaira Abu, Linda K. Sun
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Patent number: 10812075Abstract: An apparatus includes a terminal, a first device coupled to the terminal via a first node, the first device to drive a signal on the terminal via the first node, and a second device coupled to the terminal via a second node, wherein the second device comprises a dynamic on-die termination (ODT) circuit coupled to the second node. The dynamic ODT circuit includes: a bus holder circuit to receive the signal from the first device at the second node and select a termination voltage based on the signal, a response delay circuit coupled to the bus holder circuit, the response delay circuit to delay application of the termination voltage to the second node, and a time blanking delay circuit coupled to the bus holder circuit and the response delay circuit to prevent the termination voltage from changing before a threshold period of time elapses.Type: GrantFiled: May 20, 2019Date of Patent: October 20, 2020Assignee: Intel CorporationInventors: Harry Muljono, Linda K. Sun, Maria Jose Garcia Garcia de Leon, Raul Enriquez Shibayama, Abraham Isidoro Munoz, Carlos Eduardo Lozoya Lopez
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Publication number: 20190305549Abstract: Some embodiments include apparatuses having an electrostatic discharge (ESD) protection circuit coupled to a node, and first, second, and third circuits coupled to the node. The first circuit includes a first charge pump to cause a voltage at the node during activation of the first circuit to change from a first voltage value to a second voltage value within first multiple periods of a clock signal, the second voltage value being less than the first voltage value. The second includes a second charge pump to cause a voltage at the node during activation of the second circuit to change from a third voltage value to a fourth voltage value during second multiple periods of the clock signal, the fourth voltage value being greater than the third voltage value. The third circuit generates information based on the values of the voltage at the node during activation of the first and second circuits. The apparatuses optionally include a fourth circuit to generate an additional voltage at an additional node.Type: ApplicationFiled: March 29, 2018Publication date: October 3, 2019Inventors: Harry Muljono, Horaira Abu, Linda K. Sun
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Publication number: 20190280691Abstract: An apparatus includes a terminal, a first device coupled to the terminal via a first node, the first device to drive a signal on the terminal via the first node, and a second device coupled to the terminal via a second node, wherein the second device comprises a dynamic on-die termination (ODT) circuit coupled to the second node. The dynamic ODT circuit includes: a bus holder circuit to receive the signal from the first device at the second node and select a termination voltage based on the signal, a response delay circuit coupled to the bus holder circuit, the response delay circuit to delay application of the termination voltage to the second node, and a time blanking delay circuit coupled to the bus holder circuit and the response delay circuit to prevent the termination voltage from changing before a threshold period of time elapses.Type: ApplicationFiled: May 20, 2019Publication date: September 12, 2019Applicant: Intel CorporationInventors: Harry Muljono, Linda K. Sun, Maria Jose Garcia Garcia de Leon, Raul Enriquez Shibayama, Abraham Isidoro Munoz, Carlos Eduardo Lozoya Lopez
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Patent number: 10324124Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.Type: GrantFiled: June 16, 2015Date of Patent: June 18, 2019Assignee: Intel CorporationInventors: Linda K. Sun, Harry Muljono
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Patent number: 9910484Abstract: Embodiments including systems, methods, and apparatuses associated with increasing the power efficiency of one or more components of a computing system. Specifically, the system may include a processor chip which may include an on-die voltage regulator (VR) configured to supply a voltage to a component of the processor chip. The processor chip may be coupled with a dynamic random access memory (DRAM). The system may further include an external VR coupled with the DRAM. A BIOS may be configured to regulate the voltage output of one or both of the on-die VR and/or the external VR. Other embodiments may be described or claimed.Type: GrantFiled: November 26, 2013Date of Patent: March 6, 2018Assignee: Intel CorporationInventors: Harry Muljono, Linda K. Sun
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Patent number: 9335933Abstract: Described are systems and apparatuses to mitigate the timing margin loss caused by inter-symbol interference (ISI) in high speed input/output (I/O) interfaces. Data dependent jitter (DDJ) compensation techniques that may be utilized in the transmission or receiving circuitry of the I/O interface, including capturing bit data values of a data signal prior to an identified data transition, and delaying/advancing the transmission/reception the data signal or a corresponding clock signal based on these bit data values.Type: GrantFiled: December 27, 2013Date of Patent: May 10, 2016Assignee: Intel CorporationInventors: Harry Muljono, Charlie Lin, Kai Xiao, Linda K. Sun
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Publication number: 20150276857Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.Type: ApplicationFiled: June 16, 2015Publication date: October 1, 2015Inventors: Linda K. Sun, Harry Muljono
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Patent number: 9093412Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.Type: GrantFiled: December 20, 2011Date of Patent: July 28, 2015Assignee: Intel CorporationInventors: Linda K. Sun, Harry Muljono
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Publication number: 20150188732Abstract: Described are systems and apparatuses to mitigate the timing margin loss caused by inter-symbol interference (ISI) in high speed input/output (I/O) interfaces. Data dependent jitter (DDJ) compensation techniques that may be utilized in the transmission or receiving circuitry of the I/O interface, including capturing bit data values of a data signal prior to an identified data transition, and delaying/advancing the transmission/reception the data signal or a corresponding clock signal based on these bit data values.Type: ApplicationFiled: December 27, 2013Publication date: July 2, 2015Inventors: Harry MULJONO, Charlie LIN, Kai XIAO, Linda K. SUN
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Publication number: 20150149796Abstract: Embodiments including systems, methods, and apparatuses associated with increasing the power efficiency of one or more components of a computing system. Specifically, the system may include a processor chip which may include an on-die voltage regulator (VR) configured to supply a voltage to a component of the processor chip. The processor chip may be coupled with a dynamic random access memory (DRAM). The system may further include an external VR coupled with the DRAM. A BIOS may be configured to regulate the voltage output of one or both of the on-die VR and/or the external VR. Other embodiments may be described or claimed.Type: ApplicationFiled: November 26, 2013Publication date: May 28, 2015Inventors: Harry Muljono, Linda K. Sun
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Publication number: 20130154677Abstract: A pad capacitance test circuit may be coupled to one or more pads of an electronic circuit, such as a processor. The pad capacitance test circuit may be located on a die including the electronic circuit. The pad capacitance test circuit may reset a pad voltage of one or more of the pads to zero, and then couple the pad to a supply voltage through a pullup resistor for a time period. The final pad voltage at or near the end of the period of time may be measured. The pad capacitance may be determined from the measured value of the final pad voltage and known values of the supply voltage, the time period, and resistance of the pullup resistor.Type: ApplicationFiled: December 20, 2011Publication date: June 20, 2013Inventors: Linda K. Sun, Harry Muljono