Patents by Inventor Linda M. Wasiczko

Linda M. Wasiczko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of oxidizing strain-compensated superlattice of group III-V semiconductor
    Patent number: 6531414
    Abstract: A method of forming a native oxide from at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one superlattice includes two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. The method entails exposing each at least one superlattice to a water-containing environment and a temperature of at least about 425 degrees Celsius to convert at least a portion of said superlattice to a native oxide. The native oxide thus formed is useful in electrical and optoelectrical devices, such as lasers.
    Type: Grant
    Filed: May 2, 2000
    Date of Patent: March 11, 2003
    Assignee: The United States of America as represented by The National Security Agency
    Inventors: Frederick G. Johnson, Bikash Koley, Linda M. Wasiczko
  • Vertical cavity surface emitting laser with oxidized strain-compensated superlattice of group III-V semiconductor
    Patent number: 6493366
    Abstract: A vertical cavity surface emitting laser that includes a Group III-V semiconductor material substrate; a first Distributed Bragg Reflector mirror, where the first Distributed Bragg Reflector mirror includes at least seven pairs of layers, where each layer has a different index of refraction, where one of the layers is a Group III-V semiconductor material, and where the other layer is a completely oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material; a first Group III-V semiconductor material layer; a first contact; a selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material, where each at least one strain-compensated superlattice of Group III-V semiconductor material includes at least two monolayers of a Group III
    Type: Grant
    Filed: May 2, 2000
    Date of Patent: December 10, 2002
    Assignee: The United States of America as represented by the National Security Agency
    Inventors: Frederick G. Johnson, Bikash Koley, Linda M. Wasiczko
  • Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor
    Patent number: 6407407
    Abstract: A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a Group III-V semiconductor material cap layer; and a contact material. Each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material.
    Type: Grant
    Filed: May 2, 2000
    Date of Patent: June 18, 2002
    Assignee: The United States of America as represented by the Director of the National Security Agency
    Inventors: Frederick G. Johnson, Bikash Koley, Linda M. Wasiczko