Abstract: Aspects of the disclosed technology include a method including extracting, by a processor, a plurality of features from one from among a layout of a circuit, a netlist of the circuit, and the layout and the netlist of the circuit; computing, by the processor, respective lifetime distributions of the plurality of extracted features based on at least one circuit profile; and estimating, by the processor, a lifetime of the circuit by combining the respective lifetime distributions of the plurality of extracted features.

Abstract: Methods and systems have been proposed to estimate the remaining lifetime of an electronic integrated circuit that incorporates error-correcting code memory by using the failed memory bits as an indicator for the remaining lifetime of the circuit. The number of failed memory bits correlates with the remaining lifetime of the circuit, but varies as a function of wearout mechanism and use conditions. The methodology incorporates algorithms and test patterns to diagnose the cause of memory cell failure. By linking the failed bits to the wearout mechanism and by using lifetime simulation, the remaining lifetime of the circuit is estimated.

Abstract: Aspects of the disclosed technology include a method including extracting, by a processor, a plurality of features from one from among a layout of a circuit, a netlist of the circuit, and the layout and the netlist of the circuit; computing, by the processor, respective lifetime distributions of the plurality of extracted features based on at least one circuit profile; and estimating, by the processor, a lifetime of the circuit by combining the respective lifetime distributions of the plurality of extracted features.

Abstract: Methods and systems have been proposed to estimate the remaining lifetime of an electronic integrated circuit that incorporates error-correcting code memory by using the failed memory bits as an indicator for the remaining lifetime of the circuit. The number of failed memory bits correlates with the remaining lifetime of the circuit, but varies as a function of wearout mechanism and use conditions. The methodology incorporates algorithms and test patterns to diagnose the cause of memory cell failure. By linking the failed bits to the wearout mechanism and by using lifetime simulation, the remaining lifetime of the circuit is estimated.

Abstract: A system and method for providing a plurality of interconnects for a microcircuit is disclosed. The microcircuit has a plurality of functional components. The method and system include determining the placement of each of the plurality of functional components and determining a width of each of the plurality of interconnects. The determination of the width is based on a capacitance between each interconnect and a portion of the plurality of interconnects.

Abstract: Defects in integrated circuit wafers (10) are often difficult to diagnose, because patterned wafer inspections can only be done after certain wafer processing steps. Defect simulation is used to understand the relation between defects in the wafer (10) and the resulting wafer profiles. Defects such as particles (50) and bubbles (22) in the photoresist (28), for example, translate into a wide variety of defective profiles. Knowledge of the relation between defects and the defect profiles can assist in yield improvement efforts, since defects may be diagnosed by comparing simulated and observed defect profiles. From the simulated defect profiles, methods can be adapted to fix or correct observed defects.