Abstract: Substantially transparent electrodes are formed upon a substrate by forming on the substrate, in order, a high index layer, a metallic conductive layer, and a conductive or semi-conductive top layer; and patterning the top layer and the conductive layer, preferably by laser ablation, to form a plurality of discrete electrodes from the metallic conductive layer. Conductors can be attached directly to the top layer, without requiring removal of this layer to expose the metallic conductive layer. The high index layer, conductive layer and top layer can all be formed by sputtering or similar processes which do not require high temperatures, so that plastic substrates can be used. The electrodes can be used, for example, in flat panel displays and in touch screen displays.

Abstract: An ablatable laminar imaging medium useful in the manufacture of a substantially transparent electrode assembly is disclosed. The laminar imaging medium comprises a substrate, a high-index metal oxide layer, an ablatable metallic conductive layer, a high-index conductive metal oxide layer, and an ablation enhancement layer. The ablation enhancement layer has an IR-absorption greater than the IR-absorption of said high-index conductive metal oxide layer and an IR-reflectivity less than the IR-reflectivity of said high-index conductive metal oxide layer. Presence in the laminar imaging medium of the ablation enhancement layer lowers the exposure threshold of the medium and improves ablation accuracy, both—when occasioned in the manufacture of LCD electrode patterns—resulting collectively and ultimately in a more reliably formed electrical architecture, less susceptible to unwanted “shorting”.

Abstract: An ablatable laminar imaging medium useful in the manufacture of a substantially transparent electrode assembly is disclosed. The laminar imaging medium comprises a substrate, a high-index metal oxide layer, an ablatable metallic conductive layer, a high-index conductive metal oxide layer, and an ablation enhancement layer. The ablation enhancement layer has an IR-absorption greater than the IR-absorption of said high-index conductive metal oxide layer and an IR-reflectivity less than the IR-reflectivity of said high-index conductive metal oxide layer. Presence in the laminar imaging medium of the ablation enhancement layer lowers the exposure threshold of the medium and improves ablation accuracy, both—when occasioned in the manufacture of LCD electrode patterns—resulting collectively and ultimately in a more reliably formed electrical architecture, less susceptible to unwanted “shorting”.

Abstract: An ablatable laminar imaging medium useful in the manufacture of a substantially transparent electrode assembly is disclosed. The laminar imaging medium comprises a substrate, a high-index metal oxide layer, an ablatable metallic conductive layer, a high-index conductive metal oxide layer, and an ablation enhancement layer. The ablation enhancement layer has an IR-absorption greater than the IR-absorption of said high-index conductive metal oxide layer and an IR-reflectivity less than the IR-reflectivity of said high-index conductive metal oxide layer. Presence in the laminar imaging medium of the ablation enhancement layer lowers the exposure threshold of the medium and improves ablation accuracy, both—when occasioned in the manufacture of LCD electrode patterns—resulting collectively and ultimately in a more reliably formed electrical architecture, less susceptible to unwanted “shorting”.

Abstract: Substantially transparent electrodes are formed upon a substrate by forming on the substrate, in order, a high index layer, a metallic conductive layer, and a conductive or semi-conductive top layer; and patterning the top layer and the conductive layer, preferably by laser ablation, to form a plurality of discrete electrodes from the metallic conductive layer. Conductors can be attached directly to the top layer, without requiring removal of this layer to expose the metallic conductive layer. The high index layer, conductive layer and top layer can all be formed by sputtering or similar processes which do not require high temperatures, so that plastic substrates can be used. The electrodes can be used, for example, in flat panel displays and in touch screen displays.

Abstract: Substantially transparent electrodes are formed upon a substrate by forming on the substrate, in order, a high index layer, a metallic conductive layer, and a conductive or semi-conductive top layer; and patterning the top layer and the conductive layer, preferably by laser ablation, to form a plurality of discrete electrodes from the metallic conductive layer. Conductors can be attached directly to the top layer, without requiring removal of this layer to expose the metallic conductive layer. The high index layer, conductive layer and top layer can all be formed by sputtering or similar processes which do not require high temperatures, so that plastic substrates can be used. The electrodes can be used, for example, in flat panel displays and in touch screen displays.

Abstract: Substantially transparent electrodes are formed upon a substrate by forming on the substrate, in order, a high index layer, a metallic conductive layer, and a conductive or semi-conductive top layer; and patterning the top layer and the conductive layer, preferably by laser ablation, to form a plurality of discrete electrodes from the metallic conductive layer. Conductors can be attached directly to the top layer, without requiring removal of this layer to expose the metallic conductive layer. The high index layer, conductive layer and top layer can all be formed by sputtering or similar processes which do not require high temperatures, so that plastic substrates can be used. The electrodes can be used, for example, in flat panel displays and in touch screen displays.

Abstract: A multi-terminal Group III-V semiconductor high electron mobility field effect transistor comprised of a sandwich of molecular beam epitaxially grown layers and including two high mobility charge flow channels in respective two dimensional electron gas regions implemented, for example, by at least one doped layer of aluminum gallium arsenide adjacent an undoped gallium arsenide layer separated by a heterojunction. A pair of opposing two dimensional electron gas (2DEG) regions are generated in the layer of undoped gallium arsenide by the bending of the energy levels of the semiconductor materials. Charge flow occurs in a unidirectional fashion from one channel to the other in the common undoped gallium arsenide layer under the control of an electric field applied transversely through the structure by means of a top gate electrode and a bottom field plate electrode.

Abstract: A thin film of titanium diboride that has been deposited onto a substrate d patterned using photolithography is dry etched in a commercial plasma etcher with either a chloride, or a mixture of a chloride gas with oxygen, or a mixture of a chloride gas with nitrogen, or a mixture of a chloride gas with a noble gas, or a fluoride gas, or a mixture of a fluoride gas with oxygen, or a mixture of a fluoride gas with nitrogen, or a mixture of a fluoride gas with a noble gas.

Abstract: A thin film of zirconium diboride that has been deposited onto a substrate nd patterned using photolithography is dry etched in a commercial plasma etcher with either chloride gas, or a mixture of a chloride gas with oxygen, or a mixture of a chloride gas with nitrogen, or a mixture of chloride gas with a noble gas, or a fluoride gas, or a mixture of a fluoride gas with oxygen, or a mixture of a fluoride gas with nitrogen, or a mixture of a fluoride gas with a noble gas.