Patents by Inventor Linda S. Plano

Linda S. Plano has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5803967
    Abstract: A method of forming devices having textured and highly oriented diamond layers includes the steps of forming a plurality of diamond nucleation sites on a substrate and then growing diamond on the sites so merge and form a continuous diamond layer having {100} and {111} facets. The growing step is performed by repeatedly cycling between first growth parameters, which favor growth of the nucleation sites in a direction normal to the {100} facets relative to growth in a direction normal to the {111} facets, and second growth parameters, which favor growth of the {100} facets relative to growth of the {111} facets, in sequence. This is continued until a diamond layer of desired thickness is obtained having large and substantially coplanar {100} facets. The first growth parameters are selected so that the rate of growth of diamond in a direction normal to the exposed {100} facets of the layer is preferably between about one and one quarter (1.25) times and one and three quarter (1.
    Type: Grant
    Filed: May 31, 1995
    Date of Patent: September 8, 1998
    Assignee: Kobe Steel USA Inc.
    Inventors: Linda S. Plano, Brian R. Stoner
  • Patent number: 5607723
    Abstract: A continuous thin diamond film having a thickness of less than about 2 microns has a low leakage. The thin diamond film may be supported on a supporting grid and may be incorporated into an X-ray window. The film may be formed in a DC assisted CVD process where in a first phase a relatively high concentration of a carbonaceous gas is introduced into the reactor and in a second phase the concentration of the carbonaceous gas is reduced to a lower value.
    Type: Grant
    Filed: May 5, 1994
    Date of Patent: March 4, 1997
    Assignee: Crystallume
    Inventors: Linda S. Plano, Michael G. Peters, Kramadhati V. Ravi, John M. Pinneo
  • Patent number: 5432003
    Abstract: A continuous thin diamond film having a thickness of less than about 2 microns has a permeability to helium lower than about 1.times.10.sup.-6 standard cubic centimeters of helium per second per square millimeter of surface area. The thin diamond film may be supported on a supporting grid and may be incorporated into an x-ray window. The thin diamond film of the present invention may be formed in a two-stage growth process wherein a first stage a carbonaceous gas at a first concentration is introduced in to the reactor and in a second stage the concentration of the carbonaceous gas is reduced to a second lower concentration.
    Type: Grant
    Filed: August 21, 1991
    Date of Patent: July 11, 1995
    Assignee: Crystallume
    Inventors: Linda S. Plano, Michael G. Peters, Kramadhati V. Ravi, John M. Pinneo