Patents by Inventor Lindarti Purwaningsih

Lindarti Purwaningsih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Horizontal epitaxy furnace for channel SiGe formation
    Patent number: 9018065
    Abstract: A method and apparatus are provided for recessing a channel region of the PFET and epitaxially growing channel SiGe in the recessed region inside of a horizontally oriented processing furnace. Embodiments include forming an n-channel region and a p-channel region in a front side of a wafer and at least one additional wafer, the n-channel and p-channel regions corresponding to locations for forming an NFET and a PFET, respectively; placing the wafers inside a horizontally oriented furnace having a top surface and a bottom surface, with the wafers oriented vertically between the top and bottom surfaces; recessing the p-channel regions of the wafers inside the furnace; and epitaxially growing cSiGe without hole defects in the recessed p-channel regions inside the furnace.
    Type: Grant
    Filed: May 8, 2012
    Date of Patent: April 28, 2015
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Joanna Wasyluk, Yew Tuck Chow, Stephan Kronholz, Lindarti Purwaningsih, Ines Becker
  • HORIZONTAL EPITAXY FURNACE FOR CHANNEL SIGE FORMATION
    Publication number: 20130302973
    Abstract: A method and apparatus are provided for recessing a channel region of the PFET and epitaxially growing channel SiGe in the recessed region inside of a horizontally oriented processing furnace. Embodiments include forming an n-channel region and a p-channel region in a front side of a wafer and at least one additional wafer, the n-channel and p-channel regions corresponding to locations for forming an NFET and a PFET, respectively; placing the wafers inside a horizontally oriented furnace having a top surface and a bottom surface, with the wafers oriented vertically between the top and bottom surfaces; recessing the p-channel regions of the wafers inside the furnace; and epitaxially growing cSiGe without hole defects in the recessed p-channel regions inside the furnace.
    Type: Application
    Filed: May 8, 2012
    Publication date: November 14, 2013
    Applicant: GLOBALFOUNDRIES Inc.
    Inventors: Joanna Wasyluk, Yew Tuck Chow, Stephan Kronholz, Lindarti Purwaningsih, Ines Becker
  • THREE-DIMENSIONAL METAL-COATED NANOSTRUCTURES ON SUBSTRATE SURFACES, METHOD FOR PRODUCING SAME AND USE THEREOF
    Publication number: 20130236881
    Abstract: The invention relates to a method for producing column-shaped or conical nanostructures, wherein the substrate surface is covered with an arrangement of metal nanoparticles and etched, the nanoparticles acting as an etching mask and the etching parameters being set such that column structures or cone structures are created below the nanoparticles and the nanoparticles are preserved as a structural coating.
    Type: Application
    Filed: May 30, 2011
    Publication date: September 12, 2013
    Applicant: Max-Planck-Gesellschaft zur Foerderung der Wissensdchaften e.V.
    Inventors: Joachim P. Spatz, Claudia Pacholski, Tobias Schoen, Lindarti Purwaningsih, Tobias Wolfram