Patents by Inventor Lindsay Alexander Grant
Lindsay Alexander Grant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11750906Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.Type: GrantFiled: December 21, 2021Date of Patent: September 5, 2023Assignee: OMNIVISION TECHNOLOGIES, INC.Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
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Patent number: 11502120Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.Type: GrantFiled: December 19, 2019Date of Patent: November 15, 2022Assignee: OMNIVISION TECHNOLOGIES, INC.Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Young Woo Jung, Geunsook Park, Lindsay Alexander Grant
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Publication number: 20220116516Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.Type: ApplicationFiled: December 21, 2021Publication date: April 14, 2022Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Gang Chen, Yuanmei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
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Patent number: 11245823Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.Type: GrantFiled: August 13, 2019Date of Patent: February 8, 2022Assignee: OMNIVISION TECHNOLOGIES, INC.Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
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Publication number: 20210193703Abstract: Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Young Woo Jung, Geunsook Park, Lindsay Alexander Grant
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Publication number: 20210051250Abstract: An image sensor includes a substrate. An array of photodiodes is disposed in the substrate. A plurality of spacers is arranged in a spacer pattern. At least one spacer of the plurality of spacers has an aspect ratio of 18:1 or greater. A buffer layer is disposed between the substrate and the spacer pattern. An array of color filters is disposed in the spacer pattern.Type: ApplicationFiled: August 13, 2019Publication date: February 18, 2021Applicant: OMNIVISION TECHNOLOGIES, INC.Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
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Patent number: 10204951Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.Type: GrantFiled: January 29, 2018Date of Patent: February 12, 2019Assignee: OmniVision Technologies, Inc.Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Hsin-Chih Tai, Lindsay Alexander Grant
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Patent number: 10116889Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.Type: GrantFiled: February 27, 2017Date of Patent: October 30, 2018Assignee: OmniVision Technologies, Inc.Inventors: Gang Chen, Qin Wang, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant
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Publication number: 20180286897Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.Type: ApplicationFiled: January 29, 2018Publication date: October 4, 2018Applicant: OmniVision Technologies, Inc.Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Hsin-Chih Tai, Lindsay Alexander Grant
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Publication number: 20180249105Abstract: An image sensor includes an array of split dual photodiode (DPD) pairs. First groupings of the array of split DPD pairs consist entirely of either first-dimension split DPD pairs or entirely of second-dimension split DPD pairs. Each first grouping of the array of split DPD pairs consisting of the first-dimension split DPD pairs is adjacent to an other first grouping of the array of split DPD pairs consisting of the second-dimension split DPD pairs. The first-dimension is orthogonal to the second-dimension. A plurality of floating diffusion (FD) regions is arranged in each first grouping of the split DPD pairs. Each one of a plurality of transfer transistors is coupled to a respective photodiode of a respective split DPD pair, and is coupled between the respective photodiode and a respective one of the plurality of FD regions.Type: ApplicationFiled: February 27, 2017Publication date: August 30, 2018Inventors: Gang Chen, Qin Wang, Duli Mao, Dyson H. Tai, Lindsay Alexander Grant