Patents by Inventor Lindsay Grant

Lindsay Grant has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11029397
    Abstract: A time-of-flight (TOF) sensor includes a light source structured to emit light and a plurality of avalanche photodiodes. The TOF sensor also includes a plurality of pulse generators, where individual pulse generators are coupled to individual avalanche photodiodes in the plurality of avalanche photodiodes. Control circuitry is coupled to the light source, the plurality of avalanche photodiodes, and the plurality of pulse generators, to perform operations. Operations may include emitting the light from the light source, and receiving the light reflected from an object with the plurality of avalanche photodiodes. In response to receiving the light with the plurality of avalanche photodiodes, a plurality of pulses may be output from the individual pulse generators corresponding to the individual photodiodes that received the light. And, in response to outputting the plurality of pulses, a timing signal may be output when the plurality of pulses overlap temporally.
    Type: Grant
    Filed: April 20, 2018
    Date of Patent: June 8, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Olivier Bulteel, Eric A. G. Webster, Lindsay Grant
  • Patent number: 10964738
    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
    Type: Grant
    Filed: October 2, 2018
    Date of Patent: March 30, 2021
    Assignee: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson Tai, Lindsay Grant, Eric Webster, Sing-Chung Hu
  • Publication number: 20210029322
    Abstract: An image sensor has an array of pixel blocks, and each pixel block having associated shutter transistors with each coupled to transfer an image signal comprising a charge dependent on light exposure of a selected pixel onto an image storage capacitor of a plurality of image storage capacitors associated with the pixel block, the image storage capacitors of the pixel block configured to be read through a differential amplifier into an analog to digital converter. The differential amplifier of each pixel block receives a second input from a single reset-sampling capacitor associated with the pixel block. The single reset-sampling capacitor is loaded when the pixels of the pixel block are reset.
    Type: Application
    Filed: July 26, 2019
    Publication date: January 28, 2021
    Inventors: Keiji Mabuchi, Sohei Manabe, Lindsay Grant
  • Publication number: 20210014440
    Abstract: An image sensor has an array of pixels, each pixel having an associated shutter transistor coupled to transfer a charge dependent on light exposure of the pixel onto an image storage capacitor, the image-storage capacitors being configured to be read into an analog to digital converter. The shutter transistors are P-type transistors in N-wells, the wells held at an analog power voltage to reduce sensitivity of pixels to dark current; in an alternative embodiment the shutter transistors are N-type transistors in P-wells, the wells held at an analog ground voltage.
    Type: Application
    Filed: July 9, 2019
    Publication date: January 14, 2021
    Inventors: Keiji Mabuchi, Sohei Manabe, Lindsay Grant
  • Patent number: 10848697
    Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.
    Type: Grant
    Filed: August 14, 2018
    Date of Patent: November 24, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Dyson Tai, Lindsay Grant
  • Patent number: 10734434
    Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
    Type: Grant
    Filed: May 18, 2018
    Date of Patent: August 4, 2020
    Assignee: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson Tai, Lindsay Grant
  • Publication number: 20200235158
    Abstract: A sensor includes a photodiode disposed in a semiconductor material to receive light and convert the light into charge, and a first floating diffusion coupled to the photodiode to receive the charge. A second floating diffusion is coupled to the photodiode to receive the charge, and a first transfer transistor is coupled to transfer the charge from the photodiode into the first floating diffusion. A second transfer transistor is coupled to transfer the charge from the photodiode into the second floating diffusion, and an inductor is coupled between a first gate terminal of the first transfer transistor and a second gate terminal of the second transfer transistor. The inductor, the first gate terminal, and the second gate terminal form a resonant circuit.
    Type: Application
    Filed: January 23, 2019
    Publication date: July 23, 2020
    Inventors: Xianmin Yi, Jingming Yao, Philip Cizdziel, Eric Webster, Duli Mao, Zhiqiang Lin, Jens Landgraf, Keiji Mabuchi, Kevin Johnson, Sohei Manabe, Dyson H. Tai, Lindsay Grant, Boyd Fowler
  • Publication number: 20200105807
    Abstract: An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.
    Type: Application
    Filed: October 2, 2018
    Publication date: April 2, 2020
    Inventors: Gang Chen, Yuanwei Zheng, Qin Wang, Cunyu Yang, Guannan Chen, Duli Mao, Dyson Tai, Lindsay Grant, Eric Webster, Sing-Chung Hu
  • Publication number: 20200099878
    Abstract: An image sensor pixel comprises a first charge storage node configured to have a first charge storage electric potential; a second charge storage node configured to have a second charge storage electric potential and receive charge from the first charge storage node, wherein the second charge storage electric potential is greater than the first charge storage electric potential; and a transfer circuit coupled between the first and the second charge storage nodes, wherein the transfer circuit comprises at least three transfer regions, wherein: a first transfer region is proximate to the first charge storage node and configured to have a first transfer electric potential greater than the first charge storage electric potential and lower than the second charge storage electric potential; a second transfer region is coupled between the first and a third transfer region and configured to have a second transfer electric potential greater than the first charge storage electric potential and lower than the second cha
    Type: Application
    Filed: September 25, 2018
    Publication date: March 26, 2020
    Applicant: OmniVision Technologies, Inc.
    Inventors: Gang Chen, Duli Mao, Dyson Tai, Lindsay Grant
  • Publication number: 20200059618
    Abstract: An image sensor pixel array comprises a center region and two parallel edge regions, wherein the center region is between the two parallel edge regions. The center region comprises a plurality of image pixels disposed along first sub-array of rows and columns, wherein each of the plurality of image pixels comprises a first micro-lens (ML) formed at an offset position above a first light receiving element as a countermeasure for shortening of exit pupil distance of the image pixel in the center region, and each of the two parallel edge regions comprises a plurality of phase detection auto-focus (PDAF) pixels disposed along second sub-array of rows and columns, wherein each of the plurality of PDAF pixels comprises a second micro-lens (ML) formed at an alignment position above a second light receiving element; and at least one of the PDAF pixels is located at a distance away from center of the edge region to receive incident light along an injection tilt angle.
    Type: Application
    Filed: August 14, 2018
    Publication date: February 20, 2020
    Applicant: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Vincent Venezia, Dyson Tai, Lindsay Grant
  • Patent number: 10566380
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: February 18, 2020
    Assignee: OmniVision Technologies, Inc.
    Inventors: Young Woo Jung, Lindsay Grant, Dyson Tai, Vincent Venezia, Wei Zheng
  • Publication number: 20200045223
    Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.
    Type: Application
    Filed: October 10, 2019
    Publication date: February 6, 2020
    Applicant: OmniVision Technologies, Inc.
    Inventors: Chin Poh Pang, Chen-Wei Lu, Shao-Fan Kao, Chun-Yung Ai, Yin Qian, Dyson Tai, Qingwei Shan, Lindsay Grant
  • Publication number: 20190388334
    Abstract: The present invention provides oral care compositions. The compositions may be provided in a solid form, such as a film. The compositions can comprise one or more film forming polymers, one or more bioadhesive agents, one or more plasticizers, benzocaine (and optionally one or more further active ingredients), one or more polymeric solvents, and an aqueous solvent. The oral care composition can be a solid or semi-solid composition up to a temperature of at least 40° C. Methods of providing such an oral care compositions are also provided herein.
    Type: Application
    Filed: June 20, 2019
    Publication date: December 26, 2019
    Applicant: Church & Dwight Co., Inc.
    Inventors: Sarah Lindsay Grant, Dominic Gregory Walsh, Mark Alexander Livingstone
  • Publication number: 20190355778
    Abstract: An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.
    Type: Application
    Filed: May 18, 2018
    Publication date: November 21, 2019
    Inventors: Yuanwei Zheng, Gang Chen, Duli Mao, Dyson Tai, Lindsay Grant
  • Publication number: 20190324126
    Abstract: A time-of-flight (TOF) sensor includes a light source structured to emit light and a plurality of avalanche photodiodes. The TOF sensor also includes a plurality of pulse generators, where individual pulse generators are coupled to individual avalanche photodiodes in the plurality of avalanche photodiodes. Control circuitry is coupled to the light source, the plurality of avalanche photodiodes, and the plurality of pulse generators, to perform operations. Operations may include emitting the light from the light source, and receiving the light reflected from an object with the plurality of avalanche photodiodes. In response to receiving the light with the plurality of avalanche photodiodes, a plurality of pulses may be output from the individual pulse generators corresponding to the individual photodiodes that received the light. And, in response to outputting the plurality of pulses, a timing signal may be output when the plurality of pulses overlap temporally.
    Type: Application
    Filed: April 20, 2018
    Publication date: October 24, 2019
    Inventors: Olivier Bulteel, Eric A. G. Webster, Lindsay Grant
  • Patent number: 10418408
    Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: September 17, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Yuanwei Zheng, Chia-Chun Miao, Gang Chen, Yin Qian, Duli Mao, Dyson H. Tai, Lindsay Grant
  • Publication number: 20190165016
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
    Type: Application
    Filed: November 30, 2017
    Publication date: May 30, 2019
    Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
  • Patent number: 10304882
    Abstract: An image sensor includes a photodiode disposed in a semiconductor material to generate image charge in response to incident light, and a floating diffusion disposed in the semiconductor material proximate to the photodiode. A transfer transistor is coupled to the photodiode to transfer the image charge from the photodiode into the floating diffusion in response to a transfer signal applied to a transfer gate of the transfer transistor. A source follower transistor is coupled to the floating diffusion to amplify a charge on the floating diffusion. The source follower transistor includes a gate electrode including a semiconductor material having a first dopant type; a source electrode, having a second dopant type, disposed in the semiconductor material; a drain electrode, having the second dopant type, disposed in the semiconductor material; and a channel, having the second dopant type, disposed between the source electrode and the drain electrode.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: May 28, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Young Woo Jung, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant
  • Publication number: 20190115388
    Abstract: An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.
    Type: Application
    Filed: October 18, 2017
    Publication date: April 18, 2019
    Inventors: Young Woo Jung, Lindsay Grant, Dyson Tai, Vincent Venezia, Wei Zheng
  • Patent number: 10181490
    Abstract: A multi-color HDR image sensor includes at least a first combination color pixel with a first color filter and an adjacent second combination color pixel with a second color filter which is different from the first color filter, wherein each combination color pixel includes at least two sub-pixels having at least two adjacent photodiodes. Within each combination color pixel, there is a dielectric deep trench isolation (d-DTI) structure to isolate the two adjacent photodiodes of the two adjacent sub-pixels with same color filters in order to prevent the electrical cross talk. Between two adjacent combination color pixels with different color filters, there is a hybrid deep trench isolation (h-DTI) structure to isolate two adjacent photodiodes of two adjacent sub-pixels with different color filters in order to prevent both optical and electrical cross talk. Each combination color pixel is enclosed on all sides by the hybrid deep trench isolation (h-DTI) structure.
    Type: Grant
    Filed: April 3, 2017
    Date of Patent: January 15, 2019
    Assignee: OmniVision Technologies, Inc.
    Inventors: Kazufumi Watanabe, Chih-Wei Hsiung, Dyson Tai, Lindsay Grant