Patents by Inventor Lindsay M. Miller

Lindsay M. Miller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ultra-long silicon nanostructures, and methods of forming and transferring the same
    Patent number: 9691849
    Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.
    Type: Grant
    Filed: April 9, 2015
    Date of Patent: June 27, 2017
    Assignee: Alphabet Energy, Inc.
    Inventors: Jeffrey M. Weisse, John P. Reifenberg, Lindsay M. Miller, Matthew L. Scullin
  • ULTRA-LONG SILICON NANOSTRUCTURES, AND METHODS OF FORMING AND TRANSFERRING THE SAME
    Publication number: 20160035829
    Abstract: Under one aspect, a plurality of silicon nanostructures is provided. Each of the silicon nanostructures includes a length and a cross-section, the cross-section being substantially constant along the length, the length being at least 100 microns. Under another aspect, a method of making nanostructures is provided that includes providing a silicon wafer including a thickness and first and second surfaces separated from one another by the thickness; forming a patterned layer of metal on the first surface of the silicon wafer; generating a current through the thickness of the silicon wafer, the metal oxidizing the silicon wafer in a region beneath the patterned layer of the metal; and exposing the silicon wafer to an etchant in the presence of the current, the etchant removing the oxidized region of the silicon wafer so as to define a plurality of nanostructures. Methods of transferring nanowires also are provided.
    Type: Application
    Filed: April 9, 2015
    Publication date: February 4, 2016
    Inventors: Jeffrey M. Weisse, John P. Reifenberg, Lindsay M. Miller, Matthew L. Scullin