Patents by Inventor Linfeng An

Linfeng An has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10322394
    Abstract: The present disclosure provides a Ziegler-Natta catalyst composition comprising a procatalyst, a cocatalyst and a mixed external electron donor comprising a first selectivity control agent, a second selectivity control agent and an activity limiting agent. A polymerization process incorporating the present catalyst composition produces a high-stiffness propylene-based polymer with a melt flow rate greater than about 50 g/10 min. The polymerization process occurs in a single reactor, utilizing standard hydrogen concentration with no visbreaking.
    Type: Grant
    Filed: February 23, 2009
    Date of Patent: June 18, 2019
    Assignee: W. R. Grace & Co.-Conn.
    Inventor: Linfeng Chen
  • Publication number: 20190144682
    Abstract: The present disclosure provides nanocrystals(s) containing silicone capping agent(s). Dispersions containing the nanocrystal(s) and at least one of silicone monomer(s), silicone pre-polymer(s), and silicone polymer(s), and optionally additionally containing a solvent are also described. Cured dispersions, compositions of nanocrystal(s) and LEDs and related structures containing the composition(s) are provided in the present disclosure.
    Type: Application
    Filed: January 10, 2019
    Publication date: May 16, 2019
    Inventors: Wei XU, Xia BAI, Maneesh BAHADUR, Linfeng GOU, Lei ZHENG, James CRINITI, Gregory COOPER, Serpil Gonen WILLIAMS
  • Publication number: 20190131787
    Abstract: Electrical overstress protection via silicon controlled rectifier (SCR) trigger amplification control is provided. In certain configurations, an overstress protection circuit includes a control circuit for detecting presence of an overstress event between a first pad and a second pad of an interface, and a discharge circuit electrically connected between the first pad and the second pad and selectively activated by the control circuit. The interface corresponds to an electronic interface of an integrated circuit (IC), a System on a Chip (SoC), or System in-a-Package (SiP). The discharge circuit includes a first smaller SCR and a second larger SCR. In response to detecting an overstress event, the control circuit activates the smaller SCR, which in turn activates the larger SCR to provide clamping between the first pad and the second pad.
    Type: Application
    Filed: October 26, 2017
    Publication date: May 2, 2019
    Inventors: Linfeng He, Javier Alejandro Salcedo, Srivatsan Parthasarathy
  • Patent number: 10273365
    Abstract: The current disclosure relates to a nanocomposites coating including metal oxide nanocrystals, the nanocomposites further include a mixture of acrylates monomers and oligomers to provide a curable coating that provides high refractive index, high transmittance, and high temperature stability.
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: April 30, 2019
    Assignee: PIXELLIGENT TECHNOLOGIES LLC
    Inventors: Wei Xu, Selina Thomas Monickam, Jin-O Choi, Xia Bai, Linfeng Gou, Zehra Serpil Gonen-Williams, Zhiyun Chen, Gregory D. Cooper
  • Patent number: 10262860
    Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.
    Type: Grant
    Filed: June 30, 2017
    Date of Patent: April 16, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., South China University of TechnoIogy
    Inventors: Liangchen Yan, Xiaoguang Xu, Linfeng Lan, Lei Wang, Junbiao Peng
  • Patent number: 10256874
    Abstract: A data feedback method includes acquiring, by the beamformee, the number of columns from a null data packet announcement (NDPA) message; detecting the number of active first spatial streams; comparing the number of first spatial streams with the number of columns, and taking the smaller value obtained from the comparison as the number of second spatial streams required for feedback; and feeding back the number of second spatial streams and spatial stream measurement information about the second spatial streams to the beamformer.
    Type: Grant
    Filed: December 26, 2017
    Date of Patent: April 9, 2019
    Assignee: Huawei Technologies Co., Ltd.
    Inventors: Zongming Yao, Menghong Liu, Linfeng Xia
  • Patent number: 10249609
    Abstract: An integrated circuit device for protecting circuits from transient electrical events is disclosed. An integrated circuit device includes a first bipolar junction transistor (BJT) and a second BJT cross-coupled with the first BJT to operate as a first semiconductor-controlled rectifier (SCR), where a base of the first BJT is connected to a collector of the second BJT, and a base of the second BJT is connected to an emitter or a collector of the first BJT. The integrated circuit device additionally includes a triggering device comprising a first diode having a cathode electrically connected to the base of the first BJT. The integrated circuit device further includes a third BJT cross-coupled with the second BJT to operate as a second SCR, where the third BJT has a collector connected to the base of the second BJT and a base connected to the collector of the second BJT.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: April 2, 2019
    Assignee: Analog Devices, Inc.
    Inventors: Javier Alejandro Salcedo, Linfeng He
  • Publication number: 20190067609
    Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.
    Type: Application
    Filed: September 18, 2017
    Publication date: February 28, 2019
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Liangchen YAN, Xiaoguang XU, Lei WANG, Junbiao PENG, Linfeng LAN
  • Patent number: 10207238
    Abstract: The present disclosure provides a Ziegler-Natta catalyst composition comprising a procatalyst, a cocatalyst and a mixed external electron donor comprising a first selectivity control agent, a second selectivity control agent, and an activity limiting agent. A polymerization process incorporating the present catalyst composition produces a high-stiffness propylene-based polymer with a melt flow rate greater than about 50 g/10 min. The polymerization process occurs in a single reactor, utilizing standard hydrogen concentration with no visbreaking.
    Type: Grant
    Filed: February 11, 2011
    Date of Patent: February 19, 2019
    Assignee: W. R. Grace & Co.-Conn.
    Inventor: Linfeng Chen
  • Publication number: 20190049782
    Abstract: A naked eye three-dimensional liquid crystal display panel is described and has a back light source, a liquid crystal display panel and a liquid crystal lens array, wherein the liquid crystal display panel has a color filter substrate, an array substrate and a display liquid crystal layer, and the liquid crystal display panel has a plurality of pixel units. The liquid crystal lens array has a first substrate, a second substrate and a lens liquid crystal layer, and the liquid crystal lens array has a plurality of lens units, wherein a black blanket structure is disposed in the lens liquid crystal layer and between the neighboring lens units.
    Type: Application
    Filed: May 3, 2017
    Publication date: February 14, 2019
    Inventor: Linfeng LIU
  • Publication number: 20190051646
    Abstract: An integrated circuit device for protecting circuits from transient electrical events is disclosed. An integrated circuit device includes a first bipolar junction transistor (BJT) and a second BJT cross-coupled with the first BJT to operate as a first semiconductor-controlled rectifier (SCR), where a base of the first BJT is connected to a collector of the second BJT, and a base of the second BJT is connected to an emitter or a collector of the first BJT. The integrated circuit device additionally includes a triggering device comprising a first diode having a cathode electrically connected to the base of the first BJT. The integrated circuit device further includes a third BJT cross-coupled with the second BJT to operate as a second SCR, where the third BJT has a collector connected to the base of the second BJT and a base connected to the collector of the second BJT.
    Type: Application
    Filed: August 10, 2017
    Publication date: February 14, 2019
    Inventors: Javier Alejandro Salcedo, Linfeng He
  • Patent number: 10204922
    Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor.
    Type: Grant
    Filed: January 13, 2016
    Date of Patent: February 12, 2019
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Guangcai Yuan, Liangchen Yan, Xiaoguang Xu, Lei Wang, Junbiao Peng, Linfeng Lan
  • Publication number: 20190033084
    Abstract: A network system dynamically determines a route, including start and end points, for vehicles in a transportation network. The transportation network receives a service request from a user of the transportation network including an origin location for the trip and a destination location for the trip. The transportation network then generates a waypoint plan for one or more vehicles, which includes the requested origin and destination in addition to any previously requested origins and destinations included in the vehicles current route. The network system then determines a directionality for each of the waypoints in the waypoint plan and retrieves candidate start and end points that have an associated directionality within a threshold angle of the directionality of each waypoint and are proximate to the waypoint. The network system evaluates each combination of retrieved candidate points to select a route for the vehicle.
    Type: Application
    Filed: July 28, 2017
    Publication date: January 31, 2019
    Inventors: Qi Chen, Casey Lawler, Linfeng Shi, Qing Xu, Miao Yu
  • Patent number: 10179860
    Abstract: The present disclosure provides nanocrystal(s) containing silicone capping agent(s). Dispersions containing the nanocrystal(s) and at least one of silicone monomer(s), silicone pre-polymer(s), and silicone polymer(s), and optionally additionally containing a solvent are also described. Cured dispersions, compositions of nanocrystal(s) and LEDs and related structures containing the composition(s) are provided in the present disclosure.
    Type: Grant
    Filed: September 23, 2014
    Date of Patent: January 15, 2019
    Assignee: PIXELLIGENT TECHNOLOGIES LLC
    Inventors: Wei Xu, Xia Bai, Maneesh Bahadur, Linfeng Gou, Lei Zheng, James Criniti, Gregory Cooper, Serpil Gonen Williams
  • Publication number: 20180352240
    Abstract: Techniques for encoding video with temporal layering are described, comprising predicting a sequence of pictures with a motion prediction reference pattern having a number of virtual temporal layers, and encoding the sequence of pictures into an encoded bitstream with a temporal layering syntax, wherein a number of signaled temporal layers is less than the number of virtual temporal layers. The number of signaled temporal layers may be determined from a target highest frame rate, a target base layer frame rate, and the number of virtual temporal layers.
    Type: Application
    Filed: June 3, 2017
    Publication date: December 6, 2018
    Inventors: Krishnakanth Rapaka, Mukta Gore, Sunder Venkateswaran, Xiaohua Yang, Xiang Fu, Francesco Iacopino, Linfeng Guo
  • Patent number: 10147941
    Abstract: The present invention relates to a method for synthesizing graphene/sulfur composite, involving the steps of mixing graphene oxide (GO) with a hydrogen sulfide (H2S)-releasing agent in a sealed vessel, causing the H2S-releasing agent to release hydrogen sulfide, and then allowing the hydrogen sulfide to react with the graphene oxide at an elevated temperature and pressure to form said graphene/sulfur composite.
    Type: Grant
    Filed: March 15, 2016
    Date of Patent: December 4, 2018
    Assignee: THE HONG KONG POLYTECHNIC UNIVERSITY
    Inventors: Linfeng Fei, Yu Wang
  • Patent number: 10141340
    Abstract: In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: November 27, 2018
    Assignees: BOE TECHNOLOGY GROUP CO., LTD., SOUTH CHINA UNVIERSITY OF TECHNOLOGY
    Inventors: Guangcai Yuan, Liangchen Yan, Xiaoguang Xu, Lei Wang, Junbiao Peng, Linfeng Lan
  • Publication number: 20180337201
    Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.
    Type: Application
    Filed: June 30, 2017
    Publication date: November 22, 2018
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., South China University of Technology
    Inventors: Liangchen Yan, Xiaoguang Xu, Linfeng Lan, Lei Wang, Junbiao Peng
  • Publication number: 20180315777
    Abstract: A thin-film transistor (TFT) is provided in this disclosure, which comprises Sn-doped ZrO2. This oxide semiconductor material can be used in a semiconductor layer of a TFT, and a mass percentage of Sn doped in the ZrO2 is about 1%-95%. A semiconductor layer comprising Sn-doped ZrO2 exhibits higher acid tolerance after annealing. This disclosure also provides a method for fabricating a TFT, which comprises: (i) forming a semiconductor layer, wherein the semiconductor layer comprises Sn-doped ZrO2, and (ii) annealing the semiconductor layer.
    Type: Application
    Filed: May 20, 2016
    Publication date: November 1, 2018
    Applicants: BOE TECHNOLOGY GROUP CO., LTD., SOUTH CHINA UNIVERSITY OF TECHNOLOGY
    Inventors: Liangchen YAN, Guangcai YUAN, Xiaoguang XU, Lei WANG, Junbiao PENG, Linfeng LAN
  • Patent number: D832120
    Type: Grant
    Filed: June 5, 2017
    Date of Patent: October 30, 2018
    Inventor: Linfeng Chen