Abstract: A stretchable strain sensor based on vertical graphene having a stretch ratio of more than 50% and is capable of recognizing timbre with frequency greater than f hertz, f being 100, 800 or 2500, and having a sensitivity factor greater than 100 at 50% stretch, wherein the vertical graphene comprises a bottom plane layer and a vertical layer and contains high-density reticular cracks, wherein the directions of the cracks can be transverse, vertical and oblique directions, wherein the reticular cracks divide the vertical graphene into a plurality of small blocks, and adjacent small blocks are electrically connected through the vertical layer in stretched state, the cracks widen, but still can be bridged by the vertical layer, the two sides of the cracks still remain electrically connected, the sensor remains effective, wherein average diameter range of the plane of each small block is between 5 and 20 microns.

Abstract: A first torque estimator determines a first torque estimation value according to a cross product method, and a second torque estimator determines a second torque estimation value according to an energy method. A torque weight adjuster adjusts, using a weighting coefficient calculated in accordance with a predetermined condition, weightings respectively applied to these two types of torque estimation values, and outputs a torque estimation value.

Abstract: A control device includes: an angular velocity detection unit that detects an angular velocity of a motor; a vibration component removal unit that removes a vibration component in a predetermined band from the angular velocity detected by the angular velocity detection unit by filtering; and a current command calculation unit that calculates a current command value of a drive current for driving the motor according to a torque command value and the angular velocity from which the vibration component has been removed by the vibration component removal unit.

Abstract: A metal oxide semiconductor material includes a semiconductor base material and at least one kind of rare earth compound doped in the semiconductor base material, Each kind of rare earth compound has a general formula represented as (MFD)aAb, where in s the general formula (MFD)aAb, MFD is an element selected from rare earth elements capable of undergoing f-d transition and/or charge transfer transition, A is selected from elements capable of stretching a wavelength range of an absorption spectrum of MFD capable of undergoing the f-d transition and/or the charge transfer transition towards red light into a visible light range, a is a number of the element MFD in the general formula (MFD)aAb, and b is a number of the element A in the general formula (MFD)aAb.

Abstract: A command generation device according to an exemplary embodiment of the present invention includes a command receiving unit that receives a high-level command value related to motion of a motor from a host device, and an internal target generation unit that generates an internal target value of the motor, including a position target value and a rotational speed target value, based on the high-level command value. The internal target generation unit includes a feedback calculator that generates the internal target value corrected based on a difference between the high-level command value and the internal target value, and generates the internal target value corrected in a cycle shorter than a cycle of receiving the high-level command value with the command receiving unit.

Abstract: A first torque estimator determines a first torque estimation value according to a cross product method, and a second torque estimator determines a second torque estimation value according to an energy method.

Abstract: In a DC/DC converter, a voltage input from a power source is converted into a predetermined voltage, a harmonic component generated by a harmonic signal generator is superimposed on the converted voltage, and a result is output to the inverter as power to drive an electric motor. As a result, the electric motor can be driven by the signal on which the harmonic components are superimposed without being limited to the upper limit of the switching frequency of the inverter.

Abstract: A torque control of an in-vehicle motor is performed in consideration of a slip prevention control. Filtering processing is performed by a first filter processor on a high-order torque command value from a high-order device, and filtering processing is performed by a second filter processor on an angular velocity detected by an angular velocity detector. A driving torque command value to drive an electric motor is calculated based on filtering processing results. Each of the filter processors changes a time constant of the filtering processing according to a road surface friction coefficient as disturbance information.

Abstract: A control device to perform feedback control based on a current value, and output a first voltage value includes a feedforward controller using an inverse model of a plant; a feedforward voltage corrector to correct a voltage disturbance due to a modeling error between the plant and a model of the plant; a repetitive controller to learn periodic current disturbances; and a switch. The switch is ON when the current response is in a steady state, and the repetitive controller learns the disturbances and corrects a command current value. A feedback controller outputs the first voltage value by performing the feedback control based on a current value from the corrected command current value, and inputs the command current value to the inverse model to generate a second voltage value. The control device outputs a sum of the first and the second voltage value as a command voltage value.

Abstract: A control device includes: an angular velocity detection unit that detects an angular velocity of a motor; a vibration component removal unit that removes a vibration component in a predetermined band from the angular velocity detected by the angular velocity detection unit by filtering; and a current command calculation unit that calculates a current command value of a drive current for driving the motor according to a torque command value and the angular velocity from which the vibration component has been removed by the vibration component removal unit.

Abstract: A control device includes angular velocity detecting circuitry, feedback circuitry, torque command calculation circuitry, a limiter, a drive controller, and correction circuitry. The angular velocity detecting circuitry detects an angular velocity of a motor. The feedback circuitry obtains a feedback value from the angular velocity. The torque command calculation circuitry obtains a torque command value according to a superordinate torque command value supplied from a superordinate device and the feedback value. The limiter limits the torque command value obtained by the torque command calculation circuitry so as not to exceed a preset torque upper limit value. The drive controller performs a drive control of the motor according to the limited torque command value. The correction circuitry corrects the superordinate torque command value or the torque command value according to the feedback value and the superordinate torque command value.

Abstract: A command generation device according to an exemplary embodiment of the present invention includes a command receiving unit that receives a high-level command value related to motion of a motor from a host device, and an internal target generation unit that generates an internal target value of the motor, including a position target value and a rotational speed target value, based on the high-level command value. The internal target generation unit includes a feedback calculator that generates the internal target value corrected based on a difference between the high-level command value and the internal target value, and generates the internal target value corrected in a cycle shorter than a cycle of receiving the high-level command value with the command receiving unit.

Abstract: A control device that outputs a command voltage value includes: a feedback controller to perform feedback control based on a current value, and output a first voltage value; a feedforward controller established by using an inverse model of a plant to be controlled; a feedforward voltage corrector to correct a voltage disturbance that occurs due to a modeling error between a plant model and the actual plant; a repetitive controller to learn periodic current disturbances; and a switch to control input/output to the repetitive controller. The switch is turned ON when the current response is in a steady state, and the repetitive controller learns the current disturbances and corrects a command current value. The feedback controller outputs the first voltage value by performing the feedback control based on a current value that is acquired from the corrected command current value. The feedforward controller inputs the command current value to the inverse model to generate a second voltage value.

Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.

Abstract: A control device includes angular velocity detecting circuitry, feedback circuitry, torque command calculation circuitry, a limiter, a drive controller, and correction circuitry. The angular velocity detecting circuitry detects an angular velocity of a motor. The feedback circuitry obtains a feedback value from the angular velocity. The torque command calculation circuitry obtains a torque command value according to a superordinate torque command value supplied from a superordinate device and the feedback value. The limiter limits the torque command value obtained by the torque command calculation circuitry so as not to exceed a preset torque upper limit value. The drive controller performs a drive control of the motor according to the limited torque command value. The correction circuitry corrects the superordinate torque command value or the torque command value according to the feedback value and the superordinate torque command value.

Abstract: A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.

Abstract: A method for manufacturing a semiconductor thin film includes sequentially forming a first semiconductor layer, an intermediate layer, and a second semiconductor layer over a substrate. The first semiconductor layer and the second semiconductor layer can be one and another of an n-type semiconductor layer and a p-type semiconductor layer. At least one of the first semiconductor layer, the intermediate layer, or the second semiconductor layer is formed via a solution process. The n-type semiconductor layer can include indium oxide. The intermediate layer can include a self-assembly material. The p-type semiconductor layer can include a p-type organic semiconductor material, and can be pentacene. On the basis, a semiconductor thin film manufactured thereby, a semiconductor thin film transistor, and a display apparatus, are also disclosed.

Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor.