Patents by Inventor Ling-Chiang Chao

Ling-Chiang Chao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080273364
    Abstract: A memory includes a first-type memory; and a second-type memory, formed on the first-type memory, wherein the first-type memory is a nonvolatile memory with a stack of conductor/storage/conductor, and the second-type memory is a nonvolatile memory, a flash memory or another memory with a stack of conductor/storage/conductor. In addition, the nonvolatile memory can include a storage element for each memory cell, including a bottom electrode layer; a memory material layer, disposed over the bottom electrode layer, wherein the memory material has at least two physical states under different electric operation condition; and a top electrode layer, disposed over the memory material layer.
    Type: Application
    Filed: April 2, 2008
    Publication date: November 6, 2008
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventor: Ling-Chiang Chao