Abstract: The present invention relates to a nucleotide sequence as shown in SEQ ID NO: 1 for encoding a Marburg virus envelope glycoprotein, and to a human replication-deficient recombinant adenovirus capable of expressing the nucleotide sequence and a preparation method therefor, as well as an application thereof in the preparation of a vaccine against Marburg virus disease. The vaccine uses an E1 and E3 deleted replication-deficient human type-5 adenovirus as a vector, and HEK293 cells integrating an adenovirus E1 gene as a packaging cell line, and a protective antigen gene carried is a codon-optimized Marburg virus Angola strain envelope glycoprotein gene. After codon optimization of the envelope glycoprotein gene, significant expression of envelope glycoprotein can be detected in transfected cells.

Abstract: An event driven sensor includes an arrangement of photodiodes including an inner portion laterally surrounded by an outer portion. An outer pixel cell circuit is coupled to generate an outer pixel value in response to photocurrent generated by the outer portion. The outer pixel value is a binned signal representative of an average value of brightness of incident light on the arrangement of photodiodes. An inner pixel cell circuit is coupled to the inner portion to generate an inner pixel value in response to photocurrent generated by from the inner portion. An event driven circuit is coupled to the outer pixel cell circuit and the inner pixel cell circuit. The event driven circuit is coupled to generate an output signal responsive to an inner brightness indicated by the inner pixel value relative to an outer brightness indicated by the outer pixel value.

Abstract: A crane counterweight block alignment detection and control method, a crane counterweight block alignment detection and control device, and a crane. The crane counterweight block alignment detection and control method comprise: a counterweight block being provided with mounting holes for matching with positioning pins on a crane, detecting the center position of the counterweight block, and calculating the relative offset between the center position and the position of the positioning pins; detecting the relative positions of the mounting holes in the counterweight block and the positioning pins, and calculating, according to the positions, a relative rotation angle of the counterweight block for aligning the mounting holes with the positioning pins; and controlling, according to the relative offset and relative rotation angle, the movement of the counterweight block to enable the mounting holes in the counterweight block to be aligned with and installed onto the positioning pins.

Abstract: An event driven sensor includes an arrangement of photodiodes including an inner portion laterally surrounded by an outer portion. An outer pixel cell circuit is coupled to generate an outer pixel value in response to photocurrent generated by the outer portion. The outer pixel value is a binned signal representative of an average value of brightness of incident light on the arrangement of photodiodes. An inner pixel cell circuit is coupled to the inner portion to generate an inner pixel value in response to photocurrent generated by from the inner portion. An event driven circuit is coupled to the outer pixel cell circuit and the inner pixel cell circuit. The event driven circuit is coupled to generate an output signal responsive to an inner brightness indicated by the inner pixel value relative to an outer brightness indicated by the outer pixel value.

Abstract: An optical sensor includes a pixel array of pixel cells. Each pixel cell includes photodiodes to photogenerate charge in response to incident light and a source follower to generate an image data signal in response to the charge photogenerated from the photodiodes. An image readout circuit is coupled to the pixel cells to read out the image data signal generated from the source follower of at least one of the pixel cells of a row of the pixel array. An event driven circuit is coupled to the pixel cells to read out the event data signals generated in response to the charge from the photodiodes of another row of the pixel cells of the pixel array. The image readout circuit is coupled to read out the image data signal and the event driven circuit is coupled to read out the event data signals from pixel array simultaneously.

Abstract: A switch driver circuit includes a plurality of pullup transistors. The plurality of pullup transistors includes a first pullup transistor coupled between a voltage supply and a first output node. A plurality of pulldown transistors includes a first pulldown transistor coupled between the first output node and a ground node. A slope control circuit is coupled to the ground node. A plurality of global connection switches includes a first global connection switch coupled between the first output node and the slope control circuit.

Abstract: Switching techniques for fast voltage settling in image sensors are described. In one embodiment, a transfer gate (TX) driver circuit of an image sensor includes a TX driver configured to provide a TX driver voltage to a plurality of pixels of an image sensor. A power supply (NVDD) is operationally coupled to the TX driver. A first switch (SW1) operationally coupling an outside capacitance (Cext) and the TX driver. A second switch (SW2) operationally coupling the Cext and the NVDD. A third switch (SW3) operationally coupling the NVDD and the TX driver. A falling edge of the TX driver voltage is configured to control a start of data transfer from individual pixels of the plurality of pixels. The SW1 and the SW2 are configured in an open position before the falling edge of the TX driver voltage. The SW3 is configured in a closed position before the falling edge.

Abstract: A switch driver circuit includes a first transistor coupled between a voltage supply and a first output node. A second transistor is coupled between the first output node and a first discharge node. A first slope control circuit is coupled to the first discharge node to discharge the first discharge node at a first slope. A third transistor is coupled between the voltage supply and a second output node. A fourth transistor is coupled between the second output node and a second discharge node. A second slope control circuit coupled to the second discharge node to discharge the second discharge node at a second slope. The first and second slopes are mismatched.

Abstract: A readout circuit for use in an image sensor includes a first sample and hold (SH) circuit coupled to a bitline that is coupled to a pixel array. A second SH circuit is coupled to the bitline. A bypass switch is coupled to the bitline, the first SH circuit, and the second SH circuit. An analog to digital converter (ADC) is coupled to the bypass switch. The bypass switch is configured to provide an image charge value from the pixel array to the ADC through the bitline, or through one of the first SH circuit or the second SH circuit in response to a switch select signal.

Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.

Abstract: A method of manufacturing a device includes exposing at least one of a source/drain contact plug or a gate contact plug to a metal ion source solution during a manufacturing process, wherein a constituent metal of a metal ion in the metal ion source solution and the at least one source/drain contact plug or gate contact plug is the same. If the source/drain contact plug or the gate contact plug is formed of cobalt, the metal ion source solution includes a cobalt ion source solution. If the source/drain contact plug or the gate contact plug is formed of tungsten, the metal ion source solution includes a tungsten ion source solution.

Abstract: A method including: transmitting, by a control device, a first portion of content comprising a first portion of a signal corresponding to a multimedia presentation characteristic of a peripheral device; receiving, when an adjustment of the signal is below an adjustment threshold, a first instance of an input indicating a request to change the multimedia presentation characteristic; in response to receiving the first instance of the input, adjusting a second portion of the signal and transmitting a second portion of the content comprising the adjusted second portion of the signal; receiving, when the adjustment of the signal is at or above the adjustment threshold, a second instance of the input; and transmitting, in response to receiving the second instance of the input, a communication signal to the peripheral device to adjust a peripheral device control of an output of the multimedia presentation characteristic.

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

Abstract: An assessment system includes a storage device and a processing circuit. The processing circuit is coupled to the storage device and configured to execute the instructions stored in the storage device. The storage device is configured for storing instructions of extracting at least one feature parameter corresponding to at least one defect detected on an object respectively; determining at least one feature evaluation according to the at least one feature parameter respectively; weighting the at least one feature evaluation to calculate at least one weighted feature evaluation respectively; summing the at least one weighted feature evaluation to calculate at least one total score corresponding to at least one lesson-learnt case; and ranking the at least one total score corresponding to the at least one lesson-learnt case to find out a suspected root cause corresponding to one of the at least one lesson-learnt case with higher priority.

Abstract: A method including: transmitting, by a control device, a first portion of content comprising a first portion of a signal corresponding to a multimedia presentation characteristic of a peripheral device; receiving, when an adjustment of the signal is below an adjustment threshold, a first instance of an input indicating a request to change the multimedia presentation characteristic; in response to receiving the first instance of the input, adjusting a second portion of the signal and transmitting a second portion of the content comprising the adjusted second portion of the signal; receiving, when the adjustment of the signal is at or above the adjustment threshold, a second instance of the input; and transmitting, in response to receiving the second instance of the input, a communication signal to the peripheral device to adjust a peripheral device control of an output of the multimedia presentation characteristic.

Abstract: A semiconductor cleaning solution for cleaning a surface of a semiconductor device, and a method of use and a method of manufacture of the cleaning solution are disclosed. In an embodiment, a material is polished away from a first surface of the semiconductor device and the first surface is cleaned with the cleaning solution. The cleaning solution may include a host having at least one ring. The host may have a hydrophilic exterior and a hydrophobic interior.

Abstract: A switch driver circuit includes a first transistor coupled between a voltage supply and a first output node. A second transistor is coupled between the first output node and a first discharge node. A first slope control circuit is coupled to the first discharge node to discharge the first discharge node at a first slope. A third transistor is coupled between the voltage supply and a second output node. A fourth transistor is coupled between the second output node and a second discharge node. A second slope control circuit coupled to the second discharge node to discharge the second discharge node at a second slope. The first and second slopes are mismatched.

Abstract: The present invention relates to a nucleotide sequence as shown in SEQ ID NO: 1 for encoding a Marburg virus envelope glycoprotein, and to a human replication-deficient recombinant adenovirus capable of expressing the nucleotide sequence and a preparation method therefor, as well as an application thereof in the preparation of a vaccine against Marburg virus disease. The vaccine uses an E1 and E3 deleted replication-deficient human type-5 adenovirus as a vector, and HEK293 cells integrating an adenovirus E1 gene as a packaging cell line, and a protective antigen gene carried is a codon-optimized Marburg virus Angola strain envelope glycoprotein gene. After codon optimization of the envelope glycoprotein gene, significant expression of envelope glycoprotein can be detected in transfected cells.

Abstract: An image sensor includes pixel circuitry with a photodiode to receive light and output a pixel signal. The image sensor also includes readout circuitry with a first sample and hold transistor coupled to the pixel circuitry, and a first capacitor coupled to the first sample and hold transistor to receive the pixel signal. A second sample and hold transistor is coupled to the pixel circuitry, and a second capacitor is coupled to the second sample and hold transistor to receive the pixel signal. A first output switch is coupled to output the pixel signal from the first capacitor, and a second output switch is coupled to output the pixel signal from the second capacitor. A boost transistor is coupled to connect the first output switch and the second output switch when the boost transistor is turned on.

Abstract: An image sensor includes pixel circuitry with a photodiode to receive light and output a pixel signal. The image sensor also includes readout circuitry with a first sample and hold transistor coupled to the pixel circuitry, and a first capacitor coupled to the first sample and hold transistor to receive the pixel signal. A second sample and hold transistor is coupled to the pixel circuitry, and a second capacitor is coupled to the second sample and hold transistor to receive the pixel signal. A first output switch is coupled to output the pixel signal from the first capacitor, and a second output switch is coupled to output the pixel signal from the second capacitor. A boost transistor is coupled to connect the first output switch and the second output switch when the boost transistor is turned on.