Abstract: A port listening request dynamically generated by an application process hosted in a container can be identified. Whether the application process hosted in the container is trusted can be determined. Responsive to determining that the application process hosted in the container is trusted, a first port to be used as an external port for the application process can be dynamically selected, and a port assignment can be communicated to a container engine, the port assignment indicating the first port is assigned to the application process. The first port can be mapped to a second port assigned as an internal port for the application process. The first port can be opened for the application process.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is a semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the band gap of the first capping layer is larger than that of the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.

Abstract: A nitride-based light-emitting diode (LED) device includes an n-type nitride semiconductor layer, an active layer that is disposed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer disposed on the active layer, and a defect control unit disposed between the n-type nitride semiconductor layer and the active layer. The defect control unit includes first, second and third defect control layers that are sequentially disposed on the active layer in such order, and that have different doping concentrations. The third defect control layer includes one of Al-containing ternary nitride, Al-containing quaternary nitride, and a combination thereof.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first capping layer, a second capping layer, and an electron barrier layer stacked in order. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is a semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the band gap of the first capping layer is larger than that of the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.

Abstract: Disclosed is a multi-quantum well structure including a stress relief layer, an electron-collecting layer disposed on the stress relief layer, and an active layer including a first active layer unit that is disposed on the electron-collecting layer. The first active layer unit includes potential barrier sub-layers and potential well sub-layers being alternately stacked, in which at least one of the potential barrier sub-layers has a GaN/Alx1Iny1Ga(1-x1-y1)N/GaN stack, where 0<x1?1 and 0?y1<1, and for the remainder of the potential barrier sub-layers, each of the potential barrier sub-layers is a GaN layer. An LED device including the multi-quantum well structure is also disclosed.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first potential barrier layer, a first capping layer, a second capping layer, and an electron barrier layer stacked in order on a growth substrate. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is an undoped semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.

Abstract: A port listening request dynamically generated by an application process hosted in a container can be identified. Whether the application process hosted in the container is trusted can be determined. Responsive to determining that the application process hosted in the container is trusted, a first port to be used as an external port for the application process can be dynamically selected, and a port assignment can be communicated to a container engine, the port assignment indicating the first port is assigned to the application process. The first port can be mapped to a second port assigned as an internal port for the application process. The first port can be opened for the application process.

Abstract: A semiconductor light emitting device includes a multi-quantum-well structure, a first potential barrier layer, a first capping layer, a second capping layer, and an electron barrier layer stacked in order on a growth substrate. The multi-quantum-well structure includes a plurality of alternately-stacked second potential barrier layers and potential well layers. The first capping layer is an undoped semiconductor layer and the second capping layer is a p-doped semiconductor layer. Each of the first and second capping layers has a band gap larger than that of each of the second potential barrier layers and the electron barrier layer. A method of preparing the semiconductor light emitting device is also provided.

Abstract: A port listening request dynamically generated by an application process hosted in a container can be identified. Whether the application process hosted in the container is trusted can be determined. Responsive to determining that the application process hosted in the container is trusted, a first port to be used as an external port for the application process can be dynamically selected, and a port assignment can be communicated to a container engine, the port assignment indicating the first port is assigned to the application process. The first port can be mapped to a second port assigned as an internal port for the application process. The first port can be opened for the application process.

Abstract: One or more processors acquire dependency metadata, where the dependency metadata is used for representing dependency on data among at least two components of an application. The processor(s) acquire error information and data output, where the error information is used for describing errors that occur while running the application, and where the data output includes data output by the at least two components while running the application. The processor(s) analyze, based on the error information, dependency metadata and data output relevant to the error information, where the analyzing includes determining, based on a null pointer exception in the error information and dependency metadata corresponding to the null pointer exception, that corresponding data has not been output by a component corresponding to the null pointer exception. The processor(s) then use an analysis result to improve the operation of a computer that is running the application.

Abstract: One or more processors acquire dependency metadata, where the dependency metadata is used for representing dependency on data among at least two components of an application. The processor(s) acquire error information and data output, where the error information is used for describing errors that occur while running the application, and where the data output includes data output by the at least two components while running the application. The processor(s) analyze, based on the error information, dependency metadata and data output relevant to the error information, where the analyzing includes determining, based on a null pointer exception in the error information and data output of a component corresponding to the null pointer exception, that there is an error in dependency metadata corresponding to the null pointer exception. The processor(s) then provide an analysis result to improve the operation of a computer that is running the application.

Abstract: One or more processors acquire dependency metadata, where the dependency metadata is used for representing dependency on data among at least two components of an application. The processor(s) acquire error information and data output, where the error information is used for describing errors that occur while running the application, and where the data output includes data output by the at least two components while running the application. The processor(s) analyze, based on the error information, dependency metadata and data output relevant to the error information, where the analyzing includes determining, based on a null pointer exception in the error information and data output of a component corresponding to the null pointer exception, correct dependency metadata corresponding to the null pointer exception. The processor(s) then provide an analysis result to improve the operation of a computer that is running the application.

Abstract: A method, apparatus, and/or computer program product analyzes data processing. Dependency metadata, which is used for representing dependency on data among at least two components of an application, is acquired. Error information, which is used for describing errors that occurred while running the application, and data output, which includes data output by components used to run the application, are acquired. Based on the error information, dependency metadata and data output relevant to the error information are analyzed to provide an analysis result. The analysis result includes at least one of: a prompt for an error correction method, a relevant dependency metadata leading to an occurrence of an error, and relevant data output leading to an occurrence of an error.

Abstract: A nitride light emitting diode includes a substrate and a nitride buffer layer, an n-type layer, a quantum well light emitting layer, and a p-type layer over the substrate. The n-type layer is a superlattice structure formed by alternating undoped AlGaN layers and n-type doped GaN layers. The Al component of the undoped AlGaN layer is controlled to produce first stress that offsets the second stress produced by the n-type doped GaN layer, reducing crystal defects and wrapping caused by impurity doping of the n-type layer. Growth temperature and pressure of the n-type layer are controlled such that thickness of the n-type doped GaN layer is greater than that of the undoped AlGaN layer to improve surface roughness of the undoped AlGaN layer and form an n-type doped GaN layer with a flat surface. Series resistance, crystal defects and wrapping, and optoelectronic properties of the device are therefore improved.

Abstract: Embodiments of the present invention provide methods and systems for simulating variable changes during runtime of a process. The method includes recording variable changes and process context, and filtering sensitive content from the variable changes and process context. The recorded variable changes are recorded into a timeline containing the change in values to the variable changes, which is executed in a simulation environment, in order to debug the process.

Abstract: Embodiments of the present invention provide methods and systems for simulating variable changes during runtime of a process. The method includes recording variable changes and process context, and filtering sensitive content from the variable changes and process context. The recorded variable changes are recorded into a timeline containing the change in values to the variable changes, which is executed in a simulation environment, in order to debug the process.

Abstract: A nitride light-emitting diode (LED) structure includes a substrate, a buffer layer, an N-type layer, a stress release layer, a quantum well light-emitting layer and a P-type layer, wherein, between the N-type layer and the stress release layer, an electric field distribution layer is inserted, which is an n-doped multi-layer GaN structure with growth temperature equaling to or lower than that of the quantum well light-emitting layer; and GaN layers of different doping concentrations are applied to gradually reduce electric field concentration and make uniform spreading of current, thus enhancing electrostatic voltage endurance, reducing failure rate during usage, improving operational reliability and extending service life of the nitride semiconductor component.

Abstract: A computer-implemented method includes monitoring a template registry for changes in the template registry. In response to detecting a new template in the template registry, the method includes analyzing the new template to identify explicit and implicit metadata corresponding to the new template. The method further includes determining one or more possible link dependencies between a container based on the new template and one or more other containers, respectively, based on the identified explicit and implicit metadata. In addition, the method includes providing container setting recommendations to a user based on the one or more possible link dependencies and the identified explicit and implicit metadata.

Abstract: A method, apparatus, and/or computer program product analyzes data processing. Dependency metadata, which is used for representing dependency on data among at least two components of an application, is acquired. Error information, which is used for describing errors that occurred while running the application, and data output, which includes data output by components used to run the application, are acquired. Based on the error information, dependency metadata and data output relevant to the error information are analyzed to provide an analysis result. The analysis result includes at least one of: a prompt for an error correction method, a relevant dependency metadata leading to an occurrence of an error, and relevant data output leading to an occurrence of an error.

Abstract: One or more processors acquire dependency metadata, where the dependency metadata is used for representing dependency on data among at least two components of an application. The processor(s) acquire error information and data output, where the error information is used for describing errors that occur while running the application, and where the data output includes data output by the at least two components while running the application. The processor(s) analyze, based on the error information, dependency metadata and data output relevant to the error information, where the analyzing includes determining, based on a null pointer exception in the error information and data output of a component corresponding to the null pointer exception, that there is an error in dependency metadata corresponding to the null pointer exception. The processor(s) then provide an analysis result to improve the operation of a computer that is running the application.