Abstract: Provided herein are compounds and pharmaceutical compositions comprising said compounds that are useful for treating cancers. Specific cancers include those that are mediated by YAP/TAZ or those that are modulated by the interaction between YAP/TAZ and TEAD.

Abstract: A device comprising: at least one first layer, such as a graphene layer, at least one second layer of transition metal dichalcogenide, wherein the at least one first layer and the at least one second layer of transition metal dichalcogenide form at least one heterojunction. The first and second layers are laterally displaced but may overlap over a length of 0 nm to 500 nm. A low-resistance contact is formed. The device can be a transistor including a field effect transistor. The layers can be formed by chemical vapor deposition. The graphene can be heavily p-doped. Transistor performance data are described.

Abstract: An application of a GSK3 inhibitor in preparation of a drug for treating Niemann-Pick disease type C. The GSK3 inhibitor can significantly improve the self-renewal and differentiation capacities of NPC1 KD or NPC1 KO hematopoietic and neural stem cells.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.

Abstract: A semiconductor device includes a substrate, a first source/drain (S/D) region, a second S/D region, and a semiconductor sheet. The first S/D region is disposed on the substrate. The second S/D region is disposed above the first S/D region. The semiconductor sheet interconnects the first and second S/D regions and includes a plurality of turns. A method for fabricating the semiconductor device is also disclosed.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.

Abstract: A method for performing pedestrian detection with aid of light detection and ranging (LIDAR) is provided. The method includes: obtaining 3-dimensional (3D) point cloud data through the LIDAR; performing ground separation processing on the 3D point cloud data to remove ground information; performing object extraction processing on the 3D point cloud data to obtain 3D point cloud chart that includes pedestrian candidate point cloud group; performing 2-dimensional (2D) mapping processing on the 3D point cloud chart to obtain 2D chart; and extracting 3D feature and 2D feature from the 3D point cloud chart and the 2D chart, respectively, and utilizing the 3D feature and the 2D feature to determine location of the pedestrian. According to the method, image data obtained by the LIDAR may be enhanced, the method may distinguish between pedestrian far away and environment blocks, and pedestrian recognition in nighttime or in bad weather may be improved.

Abstract: The present disclosure relates to the technical field of semiconductors, and discloses a semiconductor device and a manufacturing method therefor. The manufacturing method includes: providing a semiconductor structure, where the semiconductor structure includes an active region and a gate structure located in the active region, the gate structure at least including a gate electrode, and the active region exposing an upper surface of the gate electrode; forming a surface insulator layer on the upper surface of the gate electrode; forming a patterned interlayer dielectric layer on the semiconductor structure, where the interlayer dielectric layer covers the surface insulator layer, and has a first through hole exposing a portion of the active region; and forming a conductive contact layer passing through the first through hole and contacting with the active region.

Abstract: Zirconia dental ceramics exhibiting opalescence and having a grain size in the range of 10 nm to 300 nm, a density of at least 99.5% of theoretical density, a visible light transmittance at or higher than 45% at 560 nm, and a strength of at least 800 MPa.

Abstract: Zirconia dental ceramics exhibiting opalescence and having a grain size in the range of 10 nm to 300 nm, a density of at least 99.5% of theoretical density, a visible light transmittance at or higher than 45% at 560 nm, and a strength of at least 800 MPa.

Abstract: The present specification discloses methods for scanning objects for the presence of lithium batteries. Normalized transmission X-ray data is used to generate organic, effective Z, and attenuation-based images. These images are then segmented using a combination of thresholding and region growing techniques to identify regions of interest. The regions are classified as lithium batteries or other objects, based on characteristics such as area of the region, its organic intensity, Zeff number, shape, spatial arrangement and texture.

Abstract: A vertical transistor includes a source-channel-drain structure, a gate and a gate dielectric layer. The source-channel-drain structure includes a source, a drain over the source and a channel between the source and the drain. The gate surrounds a portion of the channel. The gate is configured to provide compressive strain substantially along an extending direction of the channel when the vertical transistor is an n-channel vertical transistor, or the gate is configured to provide tensile strain substantially along the extending direction of the channel when the vertical transistor is a p-channel vertical transistor. In some embodiments, the vertical transistor further includes an ILD configured to provide tensile strain substantially along an extending direction of the channel when the vertical transistor is an n-channel vertical transistor, or configured to provide compressive strain substantially along an extending direction of the channel when the vertical transistor is a p-channel vertical transistor.

Abstract: A semiconductor device includes a substrate, a first source/drain (S/D) region, a second S/D region, and a semiconductor sheet. The first S/D region is disposed on the substrate. The second S/D region is disposed above the first S/D region. The semiconductor sheet interconnects the first and second S/D regions and includes a plurality of turns. A method for fabricating the semiconductor device is also disclosed.

Abstract: The present specification discloses methods for scanning objects for the presence of lithium batteries. Normalized transmission X-ray data is used to generate organic, effective Z, and attenuation-based images. These images are then segmented using a combination of thresholding and region growing techniques to identify regions of interest. The regions are classified as lithium batteries or other objects, based on characteristics such as area of the region, its organic intensity, Zeff number, shape, spatial arrangement and texture.

Abstract: A semiconductor device includes a substrate, a first source/drain (S/D) region, a second S/D region, and a semiconductor sheet. The first S/D region is disposed on the substrate. The second S/D region is disposed above the first S/D region. The semiconductor sheet interconnects the first and second S/D regions and includes a plurality of turns. A method for fabricating the semiconductor device is also disclosed.

Abstract: A stereo display including a display panel and a light shieldable element is provided. The display panel has at least two sub-pixel regions. Each sub-pixel region is configured with at least a first pixel electrode to define a first sub-region. The light shieldable element is disposed in front of the sub-pixel regions. Each first pixel electrode has a first shieldable region shielded by the light shieldable element and a first non-shielding region exposed by the light shieldable element. The first shieldable region is closer to the scan line than the first non-shielding region. A horizontal direction is defined as a connection line of two eyes of a user watching the stereo display. A total length A of each sub-pixel region and a length B of the first shieldable region in a predetermined direction intersected to the horizontal direction comply with a relationship that (B/A)×100% is substantially from 1.61% to 47.9%.

Abstract: Some embodiments of the present disclosure provide a method that includes compiling, for each of a plurality of individuals, health-related data in a plurality of categories, determining that a given individual has a particular type of health-related data in a particular set of one or more categories, and based on the determination that the given individual has the particular type of health-related data in the particular set of one or more categories, transmitting from a server device to a client device associated with the given individual, over a communication network, a first instruction configured to cause the client device to present a first incentive designed to cause a change in the given individual's health-related data. The first incentive may make use of a first type of motivational foundation. The method may also include determining whether the first incentive was effective or ineffective.

Abstract: Zirconia dental ceramics exhibiting opalescence and having a grain size in the range of 10 nm to 300 nm, a density of at least 99.5% of theoretical density, a visible light transmittance at or higher than 45% at 560 nm, and a strength of at least 800 MPa.

Abstract: The present specification discloses methods for scanning objects for the presence of lithium batteries. Normalized transmission X-ray data is used to generate organic, effective Z, and attenuation-based images. These images are then segmented using a combination of thresholding and region growing techniques to identify regions of interest. The regions are classified as lithium batteries or other objects, based on characteristics such as area of the region, its organic intensity, Zeff number, shape, spatial arrangement and texture.