Abstract: A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is at least disposed on a second portion of the outer side wall and is located in the gap between the first protection layer and the substrate. A height of the second protection layer on the substrate is less than or equal to a height of the micro light-emitting diode on the substrate.

Abstract: A micro light emitting device display apparatus including a circuit substrate, a plurality of micro light emitting devices, a first common electrode layer, and a second common electrode layer is provided. The micro light emitting devices are disposed on the circuit substrate and individually include an epitaxial structure and a first-type electrode and a second-type electrode respectively disposed on two side surfaces of the epitaxial structure opposite to each other. The first common electrode layer is disposed on the circuit substrate and directly covers the plurality of first-type electrodes of the micro light emitting devices. The second common electrode layer is disposed between the micro light emitting devices. The first common electrode layer is electrically connected to the second common electrode layer.

Abstract: A micro light-emitting diode device includes a substrate, a micro light-emitting diode, a first protection layer and a second protection layer. The micro light-emitting diode is adapted to be disposed on the substrate. The first protection layer is disposed on a first portion of an outer side wall of the micro light-emitting diode and has a gap from the substrate. The second protection layer is disposed on a second portion of the outer side wall of the micro light-emitting diode. The second protection layer is located in the gap between the first protection layer and the substrate and covers a part of the first protection layer. A maximum thickness of the first protection layer on the outer side wall is less than a maximum thickness of the second protection layer on the outer side wall.

Abstract: An atomization device includes a liquid storing member that stores a liquid therein, a carrier detachably assembled to the liquid storing member, an opener disposed on at least one of the liquid storing member and the carrier, and an atomizing module that is assembled to at least one of the liquid storing member and the carrier. The opener is configured to form an opening on the liquid storing member. The atomization device has a buffering chamber arranged between the atomizing module and the opening of the liquid storing member, and a volume of the buffering chamber is less than a volume of the liquid. The liquid storing member can be pressed to change an inner pressure thereof, such that a part of the liquid is driven to flow from the opening into the buffering chamber for an atomizing process of the atomizing module.

Abstract: A micro light emitting diode including an epitaxial structure and two electrodes is provided. The epitaxial structure includes a first surface, a second surface and a side surface. The first surface is opposite to the second surface, and the side surface is connected to the first surface and the second surface. The side surface includes a first portion and a second portion. The first portion is connected to the second portion to form a turning position. A width of the epitaxial structure gradually increases from the first surface to the turning position and gradually decreases from the turning position to the second surface. The two electrodes are disposed on the epitaxial structure and are electrically connected to the epitaxial structure. A micro light emitting diode device substrate adopting the micro light emitting diode is also provided.

Abstract: A method of fabricating a micro light emitting diode (LED) panel is provided. The method includes forming a semiconductor material substrate, forming a plurality of transistor devices, transferring and bonding the transistor devices onto a circuit substrate, and transferring a plurality of micro LED devices from a micro LED device substrate to the circuit substrate. The semiconductor material substrate includes a carrier, a release layer, an inorganic insulation layer, and a semiconductor material layer. The release layer is located between the carrier and the inorganic insulation layer. The semiconductor material layer is bonded to the release layer through the inorganic insulation layer. Electron mobility of the semiconductor material layer is greater than 20 cm2/V·s. The transistor devices are disposed on the release layer and are electrically connected to the circuit substrate. The micro LED devices are electrically connected to the transistor devices. A micro LED panel is also provided.

Abstract: A micro light emitting device display apparatus including a substrate, a plurality of micro light emitting devices, an isolation layer, and an air gap is provided. The micro light emitting devices are discretely disposed on the substrate. The isolation layer is disposed between the micro light emitting devices. The air gap is disposed between the micro light emitting devices, the isolation layer, and the substrate.

Abstract: A micro device includes an epitaxial structure, an insulating layer, and a light-transmissive layer. The epitaxial structure has a top surface and a bottom surface opposite to each other and a peripheral surface connected to the top surface and the bottom surface. The insulating layer covers the peripheral surface and the bottom surface of the epitaxial structure and exposes a portion of the peripheral surface. The light-transmissive layer covers the top surface of the epitaxial structure and is extended over at least a portion of the portion of the peripheral surface.

Abstract: A semiconductor structure includes a substrate, a plurality of micro semiconductor devices and a fixing structure. The micro semiconductor devices are disposed on the substrate. The fixing structure is disposed between the substrate and the micro semiconductor devices. The fixing structure includes a plurality of conductive layers and a plurality of supporting layers. The conductive layers are disposed on the lower surfaces of the micro semiconductor devices. The supporting layers are connected to the conductive layers and the substrate. The material of each of the conductive layers is different from the material of each of the supporting layers.

Abstract: An antenna structure with wide radiation bandwidth includes a first radiation portion, a ground portion, a connection portion, a second radiation portion, and a feed portion. The ground portion is positioned at a plane perpendicular to plane of the first radiation portion. The ground portion is grounded. The connection portion connects to one side of the first radiation portion. The second radiation portion connects to one side of the connection portion away from the first radiation portion. The feed portion is electrically connected to the connection portion and the second radiation portion for feeding current and signals to the antenna structure.

Abstract: The present disclosure relates generally to the field of immunology. In particular, the disclosure relates to an immune cell expressing a CAR, wherein the immune cell has been modified such that the expression and/or function of LCK has been reduced or eliminated. The disclosure also relates to methods for treating a disease in a subject.

Abstract: A reclining seatback support device which mainly includes at least one seatback support and a seatback body is revealed. The seatback body and an upper end of the seatback support are provided with pivot bracket portions pivotally connected to each other while a lower part of the seatback body and the seatback support are connected by a swing arm. When a user is sitting and lying down on the back, the seatback body is rotated around the pivot axis where the seatback body is pivotally connected to the upper end of the seatback support and then reclined at a certain angle. By elastic segments of the seatback body and the swing arm between the lower part of the seatback body and the seatback support for pulling and limiting the seatback body, the user can lean on the seatback body comfortably and safely.

Abstract: A micro light-emitting diode display, including at least one first type semiconductor base layer, a plurality of semiconductor light-emitting mesas, and a conducting layer, is provided. The plurality of semiconductor light-emitting mesas are dispersedly disposed on the at least one first type semiconductor base layer. The at least one first type semiconductor base layer has a surface exposed by the semiconductor light-emitting mesas. The conducting layer is disposed on the surface of the at least one first type semiconductor base layer and is in an interlaced distribution configuration with the semiconductor light-emitting mesas. The ratio of the area of the conducting layer in contact with the surface to the area of the surface is greater than or equal to 0.2.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises an interlayer dielectric (ILD) layer disposed over a substrate; a first conductive feature at least partially embedded in the ILD layer; a dielectric layer disposed over and aligned with the ILD layer, wherein a top surface of the dielectric layer is above a top surface of the first conductive feature; an etch stop layer (ESL) disposed over the dielectric layer and over the first conductive feature; and a second conductive feature disposed on the first conductive feature, wherein the second conductive feature includes a first portion having a first bottom surface contacting a top surface of the first conductive feature and a second portion having a second bottom surface contacting a top surface of the dielectric layer.

Abstract: Methods, systems and storage media for limiting access to one or more of devices and applications for a period of time are disclosed. Some examples may include: receiving electronic assignment information indicating that at least one assignment associated with a user is incomplete, identifying a block of time based on the at least one incomplete assignment and assigning a focus time session to the identified block of time, causing at least one of an application or device to become disabled based on a configuration profile applied during the focus time session, receiving an indication that the at least one incomplete assignment associated with the user has been completed and causing the previously disabled at least one of the application or device to become enabled.

Abstract: Embodiments of the present disclosure relate to a method, an electronic device, and a computer program product for managing a storage system. The method includes: if it is determined that a first storage unit of the storage system is faulty, writing a data block stored in the first storage unit into a hidden file of the storage system, wherein the hidden file is distributed across at least a second storage unit and a third storage unit of the storage system, and the second storage unit and the third storage unit are different from the first storage unit. The embodiments of the present disclosure can better protect data in the storage system and improve the performance of the storage system, and are particularly beneficial to improving the performance of a delay-sensitive workflow.

Abstract: A micro light-emitting diode display, including at least one first type semiconductor base layer, a plurality of semiconductor light-emitting mesas, and a conducting layer, is provided. The plurality of semiconductor light-emitting mesas are dispersedly disposed on the at least one first type semiconductor base layer. The at least one first type semiconductor base layer has a surface exposed by the semiconductor light-emitting mesas. The conducting layer is disposed on the surface of the at least one first type semiconductor base layer and is in an interlaced distribution configuration with the semiconductor light-emitting mesas. The ratio of the area of the conducting layer in contact with the surface to the area of the surface is greater than or equal to 0.2.

Abstract: A micro light-emitting diode display includes a first-type semiconductor base layer, a plurality of semiconductor light-emitting mesas dispersedly disposed on the first-type semiconductor base layer, a semiconductor heightening portion disposed on the first-type semiconductor base layer, a first bonding metal layer disposed on the semiconductor heightening portion, and a plurality of second bonding metal layers respectively disposed on the semiconductor light-emitting mesas. A top surface of the semiconductor heightening portion and a plurality of top surfaces of the semiconductor light-emitting mesas facing away from the first-type semiconductor base layer are coplanar. The top surface of the semiconductor heightening portion forms a first bonding surface adjacent to the first bonding metal layer.

Abstract: A method for manufacturing a micro light emitting diode device is provided. A connection layer and a plurality of epitaxial structures are formed on a substrate, wherein the epitaxial structures are separated from each other and relative positions therebetween are fixed via the connection layer. A first pad is formed on each of the epitaxial structures. A plurality of light blocking layers are formed between the epitaxial structures, wherein the light blocking layers and the epitaxial structures are alternately arranged. Each of the epitaxial structures is bonded to a destination substrate after forming the light blocking layers. The substrate is removed to expose the connection layer. A light conversion layer is formed corresponding to each of the epitaxial structures, wherein a width of the light conversion layer is greater than or equal to a distance between any two of the light blocking layers.