Patents by Inventor Ling-Yen Yeh
Ling-Yen Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240145582Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure is sculpted to have a plurality of non-etched portions and a plurality of etched portions having a narrower width than the plurality of non-etched portions. The sculpted fin structure is oxidized so that a plurality of nanowires are formed in the plurality of non-etched portions, respectively, and the plurality of etched portions are oxidized to form oxides. The plurality of nanowires are released by removing the oxides.Type: ApplicationFiled: January 4, 2024Publication date: May 2, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventor: Ling-Yen YEH
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Patent number: 11935890Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.Type: GrantFiled: April 11, 2022Date of Patent: March 19, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Yi Peng, Chun-Chieh Lu, Meng-Hsuan Hsiao, Ling-Yen Yeh, Carlos H. Diaz, Tung-Ying Lee
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Patent number: 11894446Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure is sculpted to have a plurality of non-etched portions and a plurality of etched portions having a narrower width than the plurality of non-etched portions. The sculpted fin structure is oxidized so that a plurality of nanowires are formed in the plurality of non-etched portions, respectively, and the plurality of etched portions are oxidized to form oxides. The plurality of nanowires are released by removing the oxides.Type: GrantFiled: May 3, 2021Date of Patent: February 6, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventor: Ling-Yen Yeh
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Patent number: 11855141Abstract: The disclosed technique forms epitaxy layers locally within a trench having angled recesses stacked in the sidewall of the trench. The sizes of the recesses are controlled to control the thickness of the epitaxy layers to be formed within the trench. The recesses are covered by cap layers and exposed one by one sequentially beginning from the lowest recess. The epitaxy layers are formed one by one within the trench with the facet edge portion thereof aligned into the respective recess, which is the recess sequentially exposed for the epitaxy layer.Type: GrantFiled: April 6, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ling-Yen Yeh, Meng-Hsuan Hsiao, Yuan-Chen Sun
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Publication number: 20230369409Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate and spanning between a first sidewall of a first shallow trench isolation (STI) feature and a second sidewall of a second STI feature; an anti-punch through (APT) feature of a first type conductivity; and a channel material layer of the first type conductivity, disposed on the APT feature and having a second doping concentration less than the first doping concentration. The APT feature is formed on the fin active region, spans between the first sidewall and the second sidewall, and has a first doping concentration.Type: ApplicationFiled: July 27, 2023Publication date: November 16, 2023Inventors: Cheng-Yi Peng, Ling-Yen Yeh, Chi-Wen Liu, Chih-Sheng Chang, Yee-Chia Yeo
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Publication number: 20230343781Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.Type: ApplicationFiled: June 27, 2023Publication date: October 26, 2023Inventors: Chia-Wen CHANG, Hong-Nien LIN, Chien-Hsing LEE, Chih-Sheng CHANG, Ling_Yen YEH, Wilman TSAI, Yee-Chia YEO
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Patent number: 11764267Abstract: A semiconductor device includes a fin structure, a two-dimensional (2D) material channel layer, a ferroelectric layer, and a metal layer. The fin structure extends from a substrate. The 2D material channel layer wraps around at least three sides of the fin structure. The ferroelectric layer wraps around at least three sides of the 2D material channel layer. The metal layer wraps around at least three sides of the ferroelectric layer.Type: GrantFiled: October 30, 2020Date of Patent: September 19, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chieh Lu, Meng-Hsuan Hsiao, Tung-Ying Lee, Ling-Yen Yeh, Chih-Sheng Chang, Carlos H. Diaz
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Patent number: 11749720Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate and spanning between a first sidewall of a first shallow trench isolation (STI) feature and a second sidewall of a second STI feature; an anti-punch through (APT) feature of a first type conductivity; and a channel material layer of the first type conductivity, disposed on the APT feature and having a second doping concentration less than the first doping concentration. The APT feature is formed on the fin active region, spans between the first sidewall and the second sidewall, and has a first doping concentration.Type: GrantFiled: December 7, 2020Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Yi Peng, Ling-Yen Yeh, Chi-Wen Liu, Chih-Sheng Chang, Yee-Chia Yeo
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Patent number: 11728332Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.Type: GrantFiled: June 21, 2021Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Wen Chang, Hong-Nien Lin, Chien-Hsing Lee, Chih-Sheng Chang, Ling-Yen Yeh, Wilman Tsai, Yee-Chia Yeo
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Publication number: 20230187552Abstract: A multi-gate semiconductor device includes a plurality of nanostructures vertically stacked over a substrate, a gate dielectric layer wrapping around the plurality of nanostructures, a gate conductive structure over the gate dielectric layer, and a first insulating spacer alongside the gate conductive structure and over the plurality of nanostructures. The first insulating spacer is in direct contact with the gate conductive structure and the gate dielectric layer.Type: ApplicationFiled: February 6, 2023Publication date: June 15, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: I-Sheng CHEN, Tzu-Chiang CHEN, Cheng-Hsien WU, Ling-Yen YEH, Carlos H. DIAZ
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Publication number: 20230154998Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.Type: ApplicationFiled: January 23, 2023Publication date: May 18, 2023Inventors: Chun-Chieh LU, Carlos H. DIAZ, Chih-Sheng CHANG, Cheng-Yi PENG, Ling-Yen YEH
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Publication number: 20230121202Abstract: A semiconductor structure is provided. The semiconductor structure includes a semiconductor fin. The semiconductor structure also includes a first nanowire vertically overlapping a top surface of the semiconductor fin, a second nanowire vertically overlapping the first nanowire, and a third nanowire vertically overlapping the second nanowire. The semiconductor structure further includes a gate wrapping around the first nanowire, the second nanowire, and the third nanowire. A first portion of the gate vertically sandwiched between the first nanowire and the second nanowire is greater than a second portion of the gate vertically sandwiched between the second nanowire and the third nanowire.Type: ApplicationFiled: December 15, 2022Publication date: April 20, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Meng-Hsuan HSIAO, Wei-Sheng YUN, Winnie Victoria Wei-Ning CHEN, Tung Ying LEE, Ling-Yen YEH
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Patent number: 11631755Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase.Type: GrantFiled: February 19, 2021Date of Patent: April 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chieh Lu, Cheng-Yi Peng, Chien-Hsing Lee, Ling-Yen Yeh, Chih-Sheng Chang, Carlos H. Diaz
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Patent number: 11575046Abstract: A method for forming a multi-gate semiconductor device includes forming a fin structure including alternating stacked first semiconductor layers and second semiconductor layers over a substrate, forming a dummy gate structure across the fin structure, forming a first spacer alongside the dummy gate structure, removing a first portion of the first spacer to expose the dummy gate structure, forming a second spacer between a second portion of first spacer and the dummy gate structure after removing the first portion of the first spacer, removing the dummy gate structure to expose a sidewall of the second spacer, removing the first semiconductor layers of the fin structure to form a plurality of nanostructures from the second semiconductor layers of the fin structure, and forming a gate conductive structure to wrap around the plurality of nanostructures. The gate conductive structure is in contact with the sidewall of the second spacer.Type: GrantFiled: September 3, 2020Date of Patent: February 7, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: I-Sheng Chen, Tzu-Chiang Chen, Cheng-Hsien Wu, Ling-Yen Yeh, Carlos H. Diaz
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Patent number: 11563102Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.Type: GrantFiled: September 21, 2020Date of Patent: January 24, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chun-Chieh Lu, Carlos H. Diaz, Chih-Sheng Chang, Cheng-Yi Peng, Ling-Yen Yeh
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Patent number: 11545582Abstract: A method for forming a gate-all-around structure is provided. The method includes forming a plurality of a first type of semiconductor layers and a plurality of a second type of semiconductor layers alternately stacked over a fin. The first type of semiconductor layers includes a first semiconductor layer and a second semiconductor layer, and the first semiconductor layer has a thickness greater than that of the second semiconductor layer. The method also includes removing the second type of semiconductor layers. In addition, the method includes forming a gate to wrap around the first type of semiconductor layers.Type: GrantFiled: November 2, 2020Date of Patent: January 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Meng-Hsuan Hsiao, Wei-Sheng Yun, Winnie Victoria Wei-Ning Chen, Tung Ying Lee, Ling-Yen Yeh
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Publication number: 20220344330Abstract: A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.Type: ApplicationFiled: July 11, 2022Publication date: October 27, 2022Inventors: Yee-Chia Yeo, Ling-Yen Yeh, Yuan-Chen Sun
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Patent number: 11430699Abstract: In a method of manufacturing a circuit including a MOSFET disposed in a MOSFET region and a negative capacitance FET (NCFET) disposed in a NCFET region, a dielectric layer is formed over a channel layer in the MOSFET region and the NCFET region. A first metallic layer is formed over the dielectric layer in the MOSFET region and the NCFET region. After the first metallic layer is formed, an annealing operation is performed only in the NCFET region. After the annealing operation, the first metallic layer is removed from the MOSFET region and the NCFET region. The annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region with an energy beam.Type: GrantFiled: December 21, 2020Date of Patent: August 30, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ling-Yen Yeh, Carlos H. Diaz, Wilman Tsai
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Patent number: 11410996Abstract: A transistor that is formed with a transition metal dichalcogenide material is provided. The transition metal dichalcogenide material is formed using a direct deposition process and patterned into one or more fins. A gate dielectric and a gate electrode are formed over the one or more fins. Alternatively, the transition metal dichalcogenide material may be formed using a deposition of a non-transition metal dichalcogenide material followed by a treatment to form a transition metal dichalcogenide material. Additionally, fins that utilized the transition metal dichalcogenide material may be formed with sidewalls that are either perpendicular to a substrate or else are sloped relative to the substrate.Type: GrantFiled: September 12, 2019Date of Patent: August 9, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yee-Chia Yeo, Ling-Yen Yeh, Yuan-Chen Sun
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Publication number: 20220238523Abstract: In a method for forming an integrated semiconductor device, a first inter-layer dielectric (ILD) layer is formed over a semiconductor device that includes a first transistor structure, a two-dimensional (2D) material layer is formed over and in contact with the first ILD layer, the 2D material layer is patterned to form a channel layer of a second transistor structure, a source electrode and a drain electrode of the second transistor structure are formed over the patterned 2D material layer and laterally spaced apart from each other, a gate dielectric layer of the second transistor structure is formed over the patterned 2D material layer, the source electrode and the drain electrode, and a gate electrode of the second transistor structure is formed over the gate dielectric layer and laterally between the source electrode and the drain electrode.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Yi PENG, Chun-Chieh LU, Meng-Hsuan HSIAO, Ling-Yen YEH, Carlos H. DIAZ, Tung-Ying LEE