Patents by Inventor Ling-Yen Yeh

Ling-Yen Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210226005
    Abstract: The disclosed technique forms epitaxy layers locally within a trench having angled recesses stacked in the sidewall of the trench. The sizes of the recesses are controlled to control the thickness of the epitaxy layers to be formed within the trench. The recesses are covered by cap layers and exposed one by one sequentially beginning from the lowest recess. The epitaxy layers are formed one by one within the trench with the facet edge portion thereof aligned into the respective recess, which is the recess sequentially exposed for the epitaxy layer.
    Type: Application
    Filed: April 6, 2021
    Publication date: July 22, 2021
    Inventors: Ling-Yen Yeh, Meng-Hsuan Hsiao, Yuan-Chen Sun
  • Patent number: 11063128
    Abstract: A semiconductor device includes a fin having a first semiconductor material, the fin having a source/drain (S/D) region and a channel region, the S/D region providing a top surface and two sidewall surfaces; an isolation structure surrounding a bottom portion of the fin, wherein the S/D region of the fin above the isolation structure has a step profile in each of the two sidewall surfaces; a semiconductor film over the S/D region and having a doped second semiconductor material, the semiconductor film providing a top surface and two sidewall surfaces over the top and two sidewall surfaces of the fin respectively, wherein the doped second semiconductor material is different from the first semiconductor material; and a metal contact over the top and two sidewall surfaces of the semiconductor film and operable to electrically communicate with the S/D region.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: July 13, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yee-Chia Yeo, Carlos H. Diaz, Chih-Hao Wang, Ling-Yen Yeh, Yuan-Chen Sun
  • Patent number: 11043556
    Abstract: The disclosed technique forms epitaxy layers locally within a trench having angled recesses stacked in the sidewall of the trench. The sizes of the recesses are controlled to control the thickness of the epitaxy layers to be formed within the trench. The recesses are covered by cap layers and exposed one by one sequentially beginning from the lowest recess. The epitaxy layers are formed one by one within the trench with the facet edge portion thereof aligned into the respective recess, which is the recess sequentially exposed for the epitaxy layer.
    Type: Grant
    Filed: May 7, 2019
    Date of Patent: June 22, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ling-Yen Yeh, Meng-Hsuan Hsiao, Yuan-Chen Sun
  • Patent number: 11043489
    Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.
    Type: Grant
    Filed: July 30, 2018
    Date of Patent: June 22, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Wen Chang, Hong-Nien Lin, Chien-Hsing Lee, Chih-Sheng Chang, Ling-Yen Yeh, Wilman Tsai, Yee-Chia Yeo
  • Publication number: 20210183708
    Abstract: In a method of manufacturing a circuit including a MOSFET disposed in a MOSFET region and a negative capacitance FET (NCFET) disposed in a NCFET region, a dielectric layer is formed over a channel layer in the MOSFET region and the NCFET region. A first metallic layer is formed over the dielectric layer in the MOSFET region and the NCFET region. After the first metallic layer is formed, an annealing operation is performed only in the NCFET region. After the annealing operation, the first metallic layer is removed from the MOSFET region and the NCFET region. The annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region with an energy beam.
    Type: Application
    Filed: December 21, 2020
    Publication date: June 17, 2021
    Inventors: Ling-Yen YEH, Carlos H. DIAZ, Wilman TSAI
  • Publication number: 20210175342
    Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase.
    Type: Application
    Filed: February 19, 2021
    Publication date: June 10, 2021
    Inventors: Chun-Chieh LU, Cheng-Yi PENG, Chien-Hsing LEE, Ling-Yen YEH, Chih-Sheng CHANG, Carlos H. DIAZ
  • Patent number: 10998430
    Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed over a substrate. The fin structure is sculpted to have a plurality of non-etched portions and a plurality of etched portions having a narrower width than the plurality of non-etched portions. The sculpted fin structure is oxidized so that a plurality of nanowires are formed in the plurality of non-etched portions, respectively, and the plurality of etched portions are oxidized to form oxides. The plurality of nanowires are released by removing the oxides.
    Type: Grant
    Filed: November 28, 2018
    Date of Patent: May 4, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Ling-Yen Yeh
  • Publication number: 20210118997
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate and spanning between a first sidewall of a first shallow trench isolation (STI) feature and a second sidewall of a second STI feature; an anti-punch through (APT) feature of a first type conductivity; and a channel material layer of the first type conductivity, disposed on the APT feature and having a second doping concentration less than the first doping concentration. The APT feature is formed on the fin active region, spans between the first sidewall and the second sidewall, and has a first doping concentration.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Cheng-Yi Peng, Ling-Yen Yeh, Chi-Wen Liu, Chih-Sheng Chang, Yee-Chia Yeo
  • Publication number: 20210074812
    Abstract: A semiconductor device includes a fin structure, a two-dimensional (2D) material channel layer, a ferroelectric layer, and a metal layer. The fin structure extends from a substrate. The 2D material channel layer wraps around at least three sides of the fin structure. The ferroelectric layer wraps around at least three sides of the 2D material channel layer. The metal layer wraps around at least three sides of the ferroelectric layer.
    Type: Application
    Filed: October 30, 2020
    Publication date: March 11, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chieh LU, Meng-Hsuan HSIAO, Tung-Ying LEE, Ling-Yen YEH, Chih-Sheng CHANG, Carlos H. DIAZ
  • Patent number: 10943995
    Abstract: A method includes forming a semiconductor fin, performing a first passivation step on a top surface of the semiconductor fin using a first passivation species, and performing a second passivation step on sidewalls of the semiconductor fin using a second passivation species different from the first passivation species. A gate stack is formed on a middle portion of the semiconductor fin. A source or a drain region is formed on a side of the gate stack, wherein the source or drain region and the gate stack form a Fin Field-Effect Transistor (FinFET).
    Type: Grant
    Filed: December 11, 2018
    Date of Patent: March 9, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Clement Hsingjen Wann, Ling-Yen Yeh, Chi-Yuan Shih, Wei-Chun Tsai
  • Patent number: 10937783
    Abstract: A semiconductor device includes a first channel region disposed over a substrate, and a first gate structure disposed over the first channel region. The first gate structure includes a gate dielectric layer disposed over the channel region, a lower conductive gate layer disposed over the gate dielectric layer, a ferroelectric material layer disposed over the lower conductive gate layer, and an upper conductive gate layer disposed over the ferroelectric material layer. The ferroelectric material layer is in direct contact with the gate dielectric layer and the lower gate conductive layer, and has a U-shape cross section.
    Type: Grant
    Filed: March 31, 2017
    Date of Patent: March 2, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Wen Chang, Hong-Nien Lin, Chien-Hsing Lee, Chih-Sheng Chang, Ling-Yen Yeh, Wilman Tsai, Yee-Chia Yeo
  • Patent number: 10930769
    Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: February 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chieh Lu, Cheng-Yi Peng, Chien-Hsing Lee, Ling-Yen Yeh, Chih-Sheng Chang, Carlos H. Diaz
  • Publication number: 20210050457
    Abstract: A method for forming a gate-all-around structure is provided. The method includes forming a plurality of a first type of semiconductor layers and a plurality of a second type of semiconductor layers alternately stacked over a fin. The first type of semiconductor layers includes a first semiconductor layer and a second semiconductor layer, and the first semiconductor layer has a thickness greater than that of the second semiconductor layer. The method also includes removing the second type of semiconductor layers. In addition, the method includes forming a gate to wrap around the first type of semiconductor layers.
    Type: Application
    Filed: November 2, 2020
    Publication date: February 18, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Hsuan HSIAO, Wei-Sheng YUN, Winnie Victoria Wei-Ning CHEN, Tung Ying LEE, Ling-Yen YEH
  • Publication number: 20210005734
    Abstract: In a method of manufacturing a negative capacitance structure, a dielectric layer is formed over a substrate. A first metallic layer is formed over the dielectric layer. After the first metallic layer is formed, an annealing operation is performed, followed by a cooling operation. A second metallic layer is formed. After the cooling operation, the dielectric layer becomes a ferroelectric dielectric layer including an orthorhombic crystal phase. The first metallic film includes a oriented crystalline layer.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 7, 2021
    Inventors: Chun-Chieh LU, Carlos H. DIAZ, Chih-Sheng CHANG, Cheng-Yi PENG, Ling-Yen YEH
  • Patent number: 10879394
    Abstract: A stack is formed on a substrate. The stack includes plural first epitaxial layers and plural second epitaxial layers alternatingly stacked over each other. The first epitaxial layers include sulfur, phosphorous, selenium, arsenic, or combinations thereof. A first etching process is performed on the stack to form a fin. A dielectric layer is formed over the fin. A channel region of the fin is exposed. A second etching process is performed on a first portion of each of the first epitaxial layers in the channel region of the fin using a hydrocarbon etch chemistry. The second etching process etches the first epitaxial layers at a higher etch rate than the second etching process etches the second epitaxial layers. A gate structure is formed around a first portion of each of the second epitaxial layers in the channel region of the fin.
    Type: Grant
    Filed: July 3, 2019
    Date of Patent: December 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ling-Yen Yeh, Carlos H. Diaz
  • Publication number: 20200403095
    Abstract: A method for forming a multi-gate semiconductor device includes forming a fin structure including alternating stacked first semiconductor layers and second semiconductor layers over a substrate, forming a dummy gate structure across the fin structure, forming a first spacer alongside the dummy gate structure, removing a first portion of the first spacer to expose the dummy gate structure, forming a second spacer between a second portion of first spacer and the dummy gate structure after removing the first portion of the first spacer, removing the dummy gate structure to expose a sidewall of the second spacer, removing the first semiconductor layers of the fin structure to form a plurality of nanostructures from the second semiconductor layers of the fin structure, and forming a gate conductive structure to wrap around the plurality of nanostructures. The gate conductive structure is in contact with the sidewall of the second spacer.
    Type: Application
    Filed: September 3, 2020
    Publication date: December 24, 2020
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: I-Sheng CHEN, Tzu-Chiang CHEN, Cheng-Hsien WU, Ling-Yen YEH, Carlos H. DIAZ
  • Patent number: 10872822
    Abstract: In a method of manufacturing a circuit including a MOSFET disposed in a MOSFET region and a negative capacitance FET (NCFET) disposed in a NCFET region, a dielectric layer is formed over a channel layer in the MOSFET region and the NCFET region. A first metallic layer is formed over the dielectric layer in the MOSFET region and the NCFET region. After the first metallic layer is formed, an annealing operation is performed only in the NCFET region. After the annealing operation, the first metallic layer is removed from the MOSFET region and the NCFET region. The annealing operation includes irradiating the first metallic layer and the dielectric layer in the NCFET region with an energy beam.
    Type: Grant
    Filed: December 23, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ling-Yen Yeh, Carlos H. Diaz, Wilman Tsai
  • Patent number: 10872955
    Abstract: A semiconductor device includes a fin structure extending along a first direction, a channel layer wrapping around a top surface and opposite sidewalls of the fin structure, a gate stack extending across the channel layer along a second direction perpendicular to the first direction, and a spacer on a top surface of the channel layer and a sidewall of the gate stack when viewed in a cross section taken along the first direction. The channel layer includes a two-dimensional material. The gate stack includes a ferroelectric layer.
    Type: Grant
    Filed: November 22, 2019
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chieh Lu, Meng-Hsuan Hsiao, Tung-Ying Lee, Ling-Yen Yeh, Chih-Sheng Chang, Carlos H. Diaz
  • Patent number: 10868132
    Abstract: A semiconductor device includes a first potential supply line for supplying a first potential, a second potential supply line for supplying a second potential lower than the first potential, a functional circuit, and at least one of a first switch disposed between the first potential supply line and the functional circuit and a second switch disposed between the second potential supply line and the functional circuit. The first switch and the second switch are negative capacitance FET.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien-Hsing Lee, Chih-Sheng Chang, Wilman Tsai, Chia-Wen Chang, Ling-Yen Yeh, Carlos H. Diaz
  • Patent number: 10861937
    Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a fin active region formed on a semiconductor substrate and spanning between a first sidewall of a first shallow trench isolation (STI) feature and a second sidewall of a second STI feature; an anti-punch through (APT) feature of a first type conductivity; and a channel material layer of the first type conductivity, disposed on the APT feature and having a second doping concentration less than the first doping concentration. The APT feature is formed on the fin active region, spans between the first sidewall and the second sidewall, and has a first doping concentration.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Yi Peng, Ling-Yen Yeh, Chi-Wen Liu, Chih-Sheng Chang, Yee-Chia Yeo