Abstract: An image processing method and an image processing apparatus for video conferencing are provided. In the method, one or more background areas in a shared screen are identified. Whether a size of the one or more background areas conforms to a size of a character representative image is determined. The character representative image is presented in a background area conforming to the size of the character representative image. Therefore, the complete briefing content can be seen.

Abstract: Methods, systems, and devices for wireless communication are described. A network node may transmit a first message using a first transmit power based on a first set of values corresponding to a set of power control parameters. The set of power control parameters may include an accumulated transmit power control parameter. The network node may receive a second message including information indicative of at least one of a second set of values corresponding to the set of power control parameters. The network node may transmit a third message using a second transmit power based on a value corresponding to the accumulated transmit power control parameter. The value may correspond to the accumulated transmit power control parameter, which may be based on a first difference between one or more of the first set of values from before the second message and one or more of the second set of values.

Abstract: Provided are a communication network switching apparatus, a communication network switching system, and a communication network switching method. The apparatus includes a first communication network interface, a second communication network interface, a processor, a communication network switch, and a device access interface. The communication network switch is configured to switch, according to the control signal of the processor, the connection manner with the first communication network interface and the second communication network interface and connect the first communication network or the second communication network to the processor. The processor is connected to the device access interface and is configured to connect a target communication network connected through the communication network switch to a target device connected to the device access interface.

Abstract: Provided are a sound gathering device for voiceprint monitoring and a preparation method. The sound gathering device is a cone structure and includes a front end portion (1) and a rear end portion (2), the front end portion (1) is trumpet-shaped, an inner wall surface of the front end portion (1) is present a pattern array of a microstructure (3), and the microstructure (3) presenting the pattern array is formed through laser etching. A sound wave frequency monitored by the sound gathering device is 50 Hz˜10 kHz, and a sound wave enters the sound gathering device from an entrance of the front end portion (1), is reflected through the pattern array of the microstructure (3) on the inner wall surface of the front end portion (1), and is transmitted from an exit of the rear end portion (2), and a sound pressure of the exit of the rear end portion (2) is 4 times˜8 times a sound pressure of the entrance of the front end portion (1).

Abstract: A film includes an ethylene-?-olefin copolymer. The film is a layer in a multilayer structure. The film has improved peel force and leaves no residue after being peeled off from a substrate.

Abstract: A semiconductor device includes a substrate having fins and trenches in between the fins, a plurality of insulators, a first metal layer, an insulating layer, a second metal layer and an interlayer dielectric. The insulators are disposed within the trenches of the substrate. The first metal layer is disposed on the plurality of insulators and across the fins. The insulating layer is disposed on the first metal layer over the plurality of insulators and across the fins. The second metal layer is disposed on the insulating layer over the plurality of insulators and across the fins. The interlayer dielectric is disposed on the insulators and covering the first metal layer, the insulating layer and the second metal layer.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: Aspects presented herein may enable a base station to perform demodulation reference signal (DMRS)-based channel sounding for a channel between the base station and a UE, such that the base station may configure a more suitable precoding for coherent UL multiple input multiple output (MIMO) transmission(s) of the UE without increasing communication overhead significantly or at all. In one aspect, a base station performs channel sounding for a channel based on a set of physical uplink shared channel (PUSCH) DMRS received from a UE via the channel. The base station selects a precoding to be used by the UE for a subsequent PUSCH transmission via the channel based on the channel sounding. The base station transmits, for the UE via a physical downlink control channel (PDCCH), a transmit precoder matrix indicator (TPMI) indicating the selected precoding, where the PDCCH schedules the subsequent PUSCH transmission for the UE.

Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.

Abstract: A network communication apparatus, includes a dispatch device, a first core group with several parallel core units and a second core group with at least one serial core unit. The dispatch device receives several packets contained in several first packet flows, and configured to dispatch several meta data to the parallel core units through several first data flows, and the meta data contain tunnel parameters of the packets. Furthermore, the at least one serial core unit receives the meta data from the parallel core units through several second data flows.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: Certain aspects of the present disclosure provide techniques for indicating capability of a user equipment (UE) to support multiple sounding reference signals (SRSs) with a single subframe, with at least one of frequency hopping, different bandwidths, or antenna switching for the multiple SRSs in the same subframe.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a network node via a source cell, a medium access control (MAC) control element (MAC-CE) triggering a handover from the source cell to a target cell in an activated cell set configured for Layer 1/Layer 2 (L1/L2) mobility. The UE may transmit, to the network node via the target cell, a physical random access channel (PRACH) to initiate an aperiodic contention-free random access (CFRA) procedure in the target cell in a random access channel (RACH) occasion in a PRACH slot associated with a slot offset indication received from the network node. Numerous other aspects are described.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: Aspects are provided which allow a UE to apply CFO compensation to resolve mismatched RAPIDs caused by uplink Doppler shifts in HST deployments. The UE obtains one or more RARs each including a RAPID, where each of the RARs is responsive to a random access message including a preamble. The UE determines, in each of a threshold number of the one or more RARs, that the RAPID of a corresponding RAR is different than the preamble of a corresponding random access message. The UE then offsets a carrier frequency for each of one or more subsequent random access messages in response to the determination. As a result, mismatched RAPIDs due to uplink Doppler shifts may be avoided and RACH success rates may thereby be improved.

Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.

Abstract: A method of wireless communication at UE is disclosed herein. The method includes transmitting at least one of a first indication including UE capability information indicating that the UE is capable of transmitting in UL during one or more MGs or a second indication including information indicating a first set of slots corresponding to the one or more MGs. The method includes obtaining a configuration to transmit a set of UL transmissions based on at least one of the first indication or the second indication. The method includes transmitting, based on the configuration, the set of UL transmissions in the first set of slots corresponding to the one or more MGs.