Abstract: A light-emitting diode chip includes a substrate. The substrate has a side surface configured as a serrated surface, which includes a plurality of laser inscribed features disposed along a thickness direction of the substrate and spaced apart from each other. A method for manufacturing the light-emitting diode chip is also disclosed herein.

Abstract: A light-emitting diode and a light-emitting device are provided, relating to the field of semiconductor manufacturing, including a substrate, an epitaxial structure and a Bragg reflective layer. The Bragg reflective layer includes a first film stack and a second film stack alternately and repetitively arranged. The first film stack and the second film stack both include a first material layer with a first refractive index and a second material layer with a second refractive index, the first material layer and the second material layer are alternately stacked repeatedly, and the first refractive index is lower than the second refractive index. In the first film stack, an optical thickness of the first material layer is greater than that of the second material layer. In the second film stack, an optical thickness of the first material layer is less than that of the second material layer.

Abstract: A light-emitting diode and a light-emitting device are provided, the light-emitting diode includes a substrate, an epitaxial structure and a Bragg reflector. The Bragg reflector includes first film stacks and second film stacks repeatedly and alternately stacked. The first film stack includes at least one pair layer consisting of a first material layer and a second material layer, an optical thickness of the first material layer is greater than that of the second material layer in each pair layer. The second film stack includes multiple pair layers consisting of a first material layer and a second material layer; and the second film stack is formed by repeatedly and alternately stacking a pair layer with optical thickness of the first material layer greater than that of the second material layer and a pair layer with optical thickness of the first material layer smaller than that of the second material layer.

Abstract: Methods, apparatuses, and computer-readable medium for SRS are provided. An example UE may receive an SRS configuration and a downlink transmission scheduling an uplink transmission, the uplink transmission being scheduled on a CC, the SRS configuration comprising one or more additional SRS symbols relative to a first set of SRS symbols associated with an aperiodic trigger Type 1 or a periodic trigger Type 0, the one or more additional SRS symbols being scheduled on a destination CC at least one of the one or more additional SRS symbols overlapping at least partially with the uplink transmission. The example UE may drop or delay transmission of at least a part of an SRS in the one or more additional SRS symbols on the destination CC or at least a part of the uplink transmission on the source CC.

Abstract: Methods, systems, and devices for wireless communication are described. A network node may transmit a first message using a first transmit power based on a first set of values corresponding to a set of power control parameters. The set of power control parameters may include an accumulated transmit power control parameter. The network node may receive a second message including information indicative of at least one of a second set of values corresponding to the set of power control parameters. The network node may transmit a third message using a second transmit power based on a value corresponding to the accumulated transmit power control parameter. The value may correspond to the accumulated transmit power control parameter, which may be based on a first difference between one or more of the first set of values from before the second message and one or more of the second set of values.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: Aspects presented herein may enable a base station to perform demodulation reference signal (DMRS)-based channel sounding for a channel between the base station and a UE, such that the base station may configure a more suitable precoding for coherent UL multiple input multiple output (MIMO) transmission(s) of the UE without increasing communication overhead significantly or at all. In one aspect, a base station performs channel sounding for a channel based on a set of physical uplink shared channel (PUSCH) DMRS received from a UE via the channel. The base station selects a precoding to be used by the UE for a subsequent PUSCH transmission via the channel based on the channel sounding. The base station transmits, for the UE via a physical downlink control channel (PDCCH), a transmit precoder matrix indicator (TPMI) indicating the selected precoding, where the PDCCH schedules the subsequent PUSCH transmission for the UE.

Abstract: A light-emitting device includes a semiconductor light-emitting stack, first and second electrodes, an insulating layer, and a passivation layer. Each of the first and second electrodes is disposed on the semiconductor light-emitting stack. The insulating layer at least partially covers the semiconductor light-emitting stack. The passivation layer is disposed on the insulating layer, and covers the semiconductor light-emitting stack and a side surface of each of the first and second electrodes, to expose an upper surface of each of the first and second electrodes. The first electrode and the second electrode are separated by a distance that is greater than 0 ?m and that is not greater than 80 ?m.

Abstract: A network communication apparatus, includes a dispatch device, a first core group with several parallel core units and a second core group with at least one serial core unit. The dispatch device receives several packets contained in several first packet flows, and configured to dispatch several meta data to the parallel core units through several first data flows, and the meta data contain tunnel parameters of the packets. Furthermore, the at least one serial core unit receives the meta data from the parallel core units through several second data flows.

Abstract: A semiconductor device includes a semiconductor layered structure, an electrode unit, and an anti-adsorption layer. The electrode unit is disposed on an electrode connecting region of the semiconductor layered structure, and is a multi-layered structure. The anti-adsorption layer is disposed on a top surface of the electrode unit opposite to the semiconductor layered structure. Also disclosed herein is a light-emitting system including the semiconductor device.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.

Abstract: Certain aspects of the present disclosure provide techniques for indicating capability of a user equipment (UE) to support multiple sounding reference signals (SRSs) with a single subframe, with at least one of frequency hopping, different bandwidths, or antenna switching for the multiple SRSs in the same subframe.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a network node via a source cell, a medium access control (MAC) control element (MAC-CE) triggering a handover from the source cell to a target cell in an activated cell set configured for Layer 1/Layer 2 (L1/L2) mobility. The UE may transmit, to the network node via the target cell, a physical random access channel (PRACH) to initiate an aperiodic contention-free random access (CFRA) procedure in the target cell in a random access channel (RACH) occasion in a PRACH slot associated with a slot offset indication received from the network node. Numerous other aspects are described.

Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.

Abstract: Aspects are provided which allow a UE to apply CFO compensation to resolve mismatched RAPIDs caused by uplink Doppler shifts in HST deployments. The UE obtains one or more RARs each including a RAPID, where each of the RARs is responsive to a random access message including a preamble. The UE determines, in each of a threshold number of the one or more RARs, that the RAPID of a corresponding RAR is different than the preamble of a corresponding random access message. The UE then offsets a carrier frequency for each of one or more subsequent random access messages in response to the determination. As a result, mismatched RAPIDs due to uplink Doppler shifts may be avoided and RACH success rates may thereby be improved.

Abstract: A light-emitting device includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer which are disposed on the upper surface of the substrate in such order. The substrate has a substrate edge region surrounding and exposed from the epitaxial structure. The substrate edge region includes a first substrate edge region and a second substrate edge region which is more proximate to the epitaxial structure than the first substrate edge region. The first substrate edge region has a first uneven toothed surface or an even flat surface. The second substrate edge regions are formed with second uneven toothed surfaces which have a height greater than a height of the first even toothed surface, or the even flat surface.

Abstract: A method of wireless communication at UE is disclosed herein. The method includes transmitting at least one of a first indication including UE capability information indicating that the UE is capable of transmitting in UL during one or more MGs or a second indication including information indicating a first set of slots corresponding to the one or more MGs. The method includes obtaining a configuration to transmit a set of UL transmissions based on at least one of the first indication or the second indication. The method includes transmitting, based on the configuration, the set of UL transmissions in the first set of slots corresponding to the one or more MGs.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a network node associated with a first carrier, a downlink control information (DCI) transmission indicative of synchronization information corresponding to a second carrier, wherein the second carrier comprises a synchronization-signal-block-less (SSB-less) carrier. The UE may communicate via the second carrier based on the synchronization information. Numerous other aspects are described.