Patents by Inventor Lingchuan Li

Lingchuan Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200151541
    Abstract: The present disclosure advantageously provides a system and a method for convolving data in a quantized convolutional neural network (CNN). The method includes selecting a set of complex interpolation points, generating a set of complex transform matrices based, at least in part, on the set of complex interpolation points, receiving an input volume from a preceding layer of the quantized CNN, performing a complex Winograd convolution on the input volume and at least one filter, using the set of complex transform matrices, to generate an output volume, and sending the output volume to a subsequent layer of the quantized CNN.
    Type: Application
    Filed: November 7, 2019
    Publication date: May 14, 2020
    Inventors: Lingchuan Meng, Danny Daysang Loh, Ian Rudolf Bratt, Alexander Eugene Chalfin, Tianmu Li
  • Patent number: 10570541
    Abstract: Carbon nanotube threads are coated with a coating solution such as dimethylformamide (DMF), ethylene glycol (EG), polyethylene glycol (PEG), PEG200 (PEG with an average molecular weight of approximately 200 grams per mole (g/mol)), PEG400 (PEG with an average molecular weight of approximately 400 g/mol), aminopropyl terminated polydimethylsiloxane (DMS 100 cP),polymide, poly(methylhydrosiloxane), polyalkylene glycol, (3-aminopropyl)trimethoxysilane, hydride functional siloxane O resin, platinum (0) -1,3-divinyl-1,1,3,3-tetramethyl-disiloxane, moisture in air, acetic acid, water, poly(dimethylsiloxane) hydroxy terminated, (3-glycidyloxypropyl)-trimethoxysilane or a combination thereof. The coated carbon nanotubes may be used to stitch in a Z-direction into a composite such as a polymer prepreg to strengthen the composite. The stitching may occur using a sewing machine.
    Type: Grant
    Filed: June 28, 2017
    Date of Patent: February 25, 2020
    Assignees: University of Dayton, Nanocomp Technologies, Inc.
    Inventors: Paul Kladitis, Lingchuan Li, Brian Rice, Zongwu Bai, David Gailus
  • Publication number: 20170370039
    Abstract: Carbon nanotube threads are coated with a coating solution such as dimethylformamide (DMF), ethylene glycol (EG), polyethylene glycol (PEG), PEG200 (PEG with a average molecular weight of approximately 200 grams per mole (g/mol)), PEG400 (PEG with a average molecular weight of approximately 400 g/mol), dimethyl sulfide (DMS 100 cP), HP1632, poly(methylhydrosiloxane), polyalkylene glycol, (3-aminopropyl)trimethoxysilane, hydride functional siloxane 0 resin, platinum (0) -1,3-divinyl-1,1,3,3-tetramethyl-disiloxane, moisture in air, acetic acid, water, poly(dimethylsiloxane) hydroxy terminated, (3-glycidyloxypropyl)-trimethoxysilane or a combination thereof. The coated carbon nanotubes may be used to stitch in a Z-direction into a composite such as a polymer prepreg to strengthen the composite. The stitching may occur using a sewing machine.
    Type: Application
    Filed: June 28, 2017
    Publication date: December 28, 2017
    Inventors: Paul Kladitis, Lingchuan Li, Brian Rice, Zongwu Bai, David Gailus
  • Patent number: 9676627
    Abstract: Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: June 13, 2017
    Assignee: University of Dayton
    Inventor: Lingchuan Li
  • Publication number: 20150329360
    Abstract: Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.
    Type: Application
    Filed: May 14, 2015
    Publication date: November 19, 2015
    Inventor: Lingchuan Li
  • Patent number: 9136267
    Abstract: An integrated circuit chip includes CMOS integrated circuit cells arranged in a semiconductor layer, each including first and second active regions, having first and second polarities, respectively. A first power rail is routed along boundaries of the CMOS integrated circuit cells proximate to the first active regions. A second power rail is routed over second active regions. Global routing channels are routed over the second active regions such that the second power rail is disposed between the global routing channels and the first power rail. The global routing channels are coupled between the CMOS integrated circuit cells to couple the CMOS integrated circuit cells together globally in the integrated circuit chip.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: September 15, 2015
    Assignee: OmniVision Technologies, Inc.
    Inventors: Tianjia Sun, Lingchuan Li, Shumin Wu
  • Publication number: 20150228650
    Abstract: An integrated circuit chip includes CMOS integrated circuit cells arranged in a semiconductor layer, each including first and second active regions, having first and second polarities, respectively. A first power rail is routed along boundaries of the CMOS integrated circuit cells proximate to the first active regions. A second power rail is routed over second active regions. Global routing channels are routed over the second active regions such that the second power rail is disposed between the global routing channels and the first power rail. The global routing channels are coupled between the CMOS integrated circuit cells to couple the CMOS integrated circuit cells together globally in the integrated circuit chip.
    Type: Application
    Filed: February 7, 2014
    Publication date: August 13, 2015
    Applicant: OMNIVISION TECHNOLOGIES, INC.
    Inventors: Tianjia Sun, Lingchuan Li, Shumin Wu
  • Patent number: 8895105
    Abstract: A method of growing carbon nanomaterials on a substrate wherein the substrate is exposed to an oxidizing gas; a seed material is deposited on the substrate to form a receptor for a catalyst on the surface of said substrate; a catalyst is deposited on the seed material by exposing the receptor on the surface of the substrate to a vapor of the catalyst; and substrate is subjected to chemical vapor deposition in a carbon containing gas to grow carbon nanomaterial on the substrate.
    Type: Grant
    Filed: June 12, 2012
    Date of Patent: November 25, 2014
    Assignee: University of Dayton
    Inventors: Khalid Lafdi, Lingchuan Li, Matthew C. Boehle, Alexandre Lagounov
  • Publication number: 20120315467
    Abstract: A method of growing carbon nanomaterials on a substrate wherein the substrate is exposed to an oxidizing gas; a seed material is deposited on the substrate to form a receptor for a catalyst on the surface of said substrate; a catalyst is deposited on the seed material by exposing the receptor on the surface of the substrate to a vapor of the catalyst; and substrate is subjected to chemical vapor deposition in a carbon containing gas to grow carbon nanomaterial on the substrate.
    Type: Application
    Filed: June 12, 2012
    Publication date: December 13, 2012
    Applicant: UNIVERSITY OF DAYTON
    Inventors: Khalid Lafdi, Lingchuan Li, Matthew C. Boehle, Alexandre Lagounov
  • Publication number: 20090186214
    Abstract: A method of growing carbon nanomaterials such as carbon ?anotubes, carbon nanofibers, and carbon whiskers on a variety of substrates is provided which includes exposing at least a portion of the substrate surface to an oxidizing gas, followed by forming catalysts on the substrate surface, either by immersing the carbon substrate in a catalyst solution or by electrodeposition. The treated substrate is then subjected to chemical vapor deposition to facilitate the growth of carbon nanomaterials on the surface thereof. The carbon nanomaterials may be grown on a variety of substrates including carbon substrates, graphite, metal, metal alloys, intermetallic compounds, glass, fiberglass, and ceramic substrates.
    Type: Application
    Filed: May 15, 2007
    Publication date: July 23, 2009
    Applicant: UNIVERSITY OF DAYTON
    Inventors: Khalid Lafdi, Lingchuan Li