Abstract: A process for making a carbon nanotube structure includes forming a composite by depositing or growing carbon nanotubes onto a metal substrate, and infusing the carbon nanotubes. In other aspects, a method of making a wire, includes coating carbon nanotubes on a wire, and electroplating the carbon nanotubes. In still other aspects, a method of making a conductor includes growing or depositing vertically aligned carbon nanotubes on a sheet. Yet still, a method of making a cable includes forming multiple composite wires, each composite wire formed by depositing or growing carbon nanotubes onto a metal substrate, and performing a metal infusion of the carbon nanotubes. The method also comprises combining multiple finished composite wires or objects to make large cables or straps.

Abstract: Provided are microcrack-resistant compositions, apparatuses comprising microcrack-resistant materials, and methods of containing fluids. More specifically, the present disclosure provides microcrack-resistant laminate compositions comprising interdisposed vertically aligned carbon nanotubes. The present disclosure additionally provides microcrack-resistant fluid tanks. Further, the present disclosure provides methods of containing a cryogenic fluid without leaks.

Abstract: A process for making a carbon nanotube structure includes forming a composite by depositing or growing carbon nanotubes onto a metal substrate, and infusing the carbon nanotubes. In other aspects, a method of making a wire, includes coating carbon nanotubes on a wire, and electroplating the carbon nanotubes. In still other aspects, a method of making a conductor includes growing or depositing vertically aligned carbon nanotubes on a sheet. Yet still, a method of making a cable includes forming multiple composite wires, each composite wire formed by depositing or growing carbon nanotubes onto a metal substrate, and performing a metal infusion of the carbon nanotubes. The method also comprises combining multiple finished composite wires or objects to make large cables or straps.

Abstract: A process for making a carbon nanotube structure includes forming a composite by depositing or growing carbon nanotubes onto a metal substrate, and infusing the carbon nanotubes. In other aspects, a method of making a wire, includes coating carbon nanotubes on a wire, and electroplating the carbon nanotubes. In still other aspects, a method of making a conductor includes growing or depositing vertically aligned carbon nanotubes on a sheet. Yet still, a method of making a cable includes forming multiple composite wires, each composite wire formed by depositing or growing carbon nanotubes onto a metal substrate, and performing a metal infusion of the carbon nanotubes. The method also comprises combining multiple finished composite wires or objects to make large cables or straps.

Abstract: Carbon nanotube threads are coated with a coating solution such as dimethylformamide (DMF), ethylene glycol (EG), polyethylene glycol (PEG), PEG200 (PEG with an average molecular weight of approximately 200 grams per mole (g/mol)), PEG400 (PEG with an average molecular weight of approximately 400 g/mol), aminopropyl terminated polydimethylsiloxane (DMS 100 cP),polymide, poly(methylhydrosiloxane), polyalkylene glycol, (3-aminopropyl)trimethoxysilane, hydride functional siloxane O resin, platinum (0) -1,3-divinyl-1,1,3,3-tetramethyl-disiloxane, moisture in air, acetic acid, water, poly(dimethylsiloxane) hydroxy terminated, (3-glycidyloxypropyl)-trimethoxysilane or a combination thereof. The coated carbon nanotubes may be used to stitch in a Z-direction into a composite such as a polymer prepreg to strengthen the composite. The stitching may occur using a sewing machine.

Abstract: Carbon nanotube threads are coated with a coating solution such as dimethylformamide (DMF), ethylene glycol (EG), polyethylene glycol (PEG), PEG200 (PEG with a average molecular weight of approximately 200 grams per mole (g/mol)), PEG400 (PEG with a average molecular weight of approximately 400 g/mol), dimethyl sulfide (DMS 100 cP), HP1632, poly(methylhydrosiloxane), polyalkylene glycol, (3-aminopropyl)trimethoxysilane, hydride functional siloxane 0 resin, platinum (0) -1,3-divinyl-1,1,3,3-tetramethyl-disiloxane, moisture in air, acetic acid, water, poly(dimethylsiloxane) hydroxy terminated, (3-glycidyloxypropyl)-trimethoxysilane or a combination thereof. The coated carbon nanotubes may be used to stitch in a Z-direction into a composite such as a polymer prepreg to strengthen the composite. The stitching may occur using a sewing machine.

Abstract: Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.

Abstract: Methods of growing boron nitride nanotubes and silicon nanowires on carbon substrates formed from carbon fibers. The methods include applying a catalyst solution to the carbon substrate and heating the catalyst coated carbon substrate in a furnace in the presence of chemical vapor deposition reactive species to form the boron nitride nanotubes and silicon nanowires. A mixture of a first vapor deposition precursor formed from boric acid and urea and a second vapor deposition precursor formed from iron nitrate, magnesium nitrate, and D-sorbitol are provided to the furnace to form boron nitride nanotubes. A silicon source including SiH4 is provided to the furnace at atmospheric pressure to form silicon nanowires.

Abstract: An integrated circuit chip includes CMOS integrated circuit cells arranged in a semiconductor layer, each including first and second active regions, having first and second polarities, respectively. A first power rail is routed along boundaries of the CMOS integrated circuit cells proximate to the first active regions. A second power rail is routed over second active regions. Global routing channels are routed over the second active regions such that the second power rail is disposed between the global routing channels and the first power rail. The global routing channels are coupled between the CMOS integrated circuit cells to couple the CMOS integrated circuit cells together globally in the integrated circuit chip.

Abstract: An integrated circuit chip includes CMOS integrated circuit cells arranged in a semiconductor layer, each including first and second active regions, having first and second polarities, respectively. A first power rail is routed along boundaries of the CMOS integrated circuit cells proximate to the first active regions. A second power rail is routed over second active regions. Global routing channels are routed over the second active regions such that the second power rail is disposed between the global routing channels and the first power rail. The global routing channels are coupled between the CMOS integrated circuit cells to couple the CMOS integrated circuit cells together globally in the integrated circuit chip.

Abstract: A method of growing carbon nanomaterials on a substrate wherein the substrate is exposed to an oxidizing gas; a seed material is deposited on the substrate to form a receptor for a catalyst on the surface of said substrate; a catalyst is deposited on the seed material by exposing the receptor on the surface of the substrate to a vapor of the catalyst; and substrate is subjected to chemical vapor deposition in a carbon containing gas to grow carbon nanomaterial on the substrate.

Abstract: A method of growing carbon nanomaterials on a substrate wherein the substrate is exposed to an oxidizing gas; a seed material is deposited on the substrate to form a receptor for a catalyst on the surface of said substrate; a catalyst is deposited on the seed material by exposing the receptor on the surface of the substrate to a vapor of the catalyst; and substrate is subjected to chemical vapor deposition in a carbon containing gas to grow carbon nanomaterial on the substrate.

Abstract: A method of growing carbon nanomaterials such as carbon ?anotubes, carbon nanofibers, and carbon whiskers on a variety of substrates is provided which includes exposing at least a portion of the substrate surface to an oxidizing gas, followed by forming catalysts on the substrate surface, either by immersing the carbon substrate in a catalyst solution or by electrodeposition. The treated substrate is then subjected to chemical vapor deposition to facilitate the growth of carbon nanomaterials on the surface thereof. The carbon nanomaterials may be grown on a variety of substrates including carbon substrates, graphite, metal, metal alloys, intermetallic compounds, glass, fiberglass, and ceramic substrates.