Patents by Inventor Lingcong LE

Lingcong LE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230369422
    Abstract: This application provides a transistor, including a channel, a source, a drain, a gate, an isolation area disposed on two sides of the channel, and a source field plate located on a side of the gate away from the channel. The source field plate is electrically connected to the source. The source field plate includes a primary field plate and a secondary field plate. The primary field plate partially overlaps the gate. A side part of the primary field plate crosses the gate and extends to the drain along the channel. A first end of the primary field plate crosses the channel along a direction perpendicular to the channel and enters the isolation area. The secondary field plate is located at a boundary between the channel and the isolation area, and extends from the primary field plate to a direction of the source along the channel.
    Type: Application
    Filed: July 28, 2023
    Publication date: November 16, 2023
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Lingcong LE, Shujun DAI, Xiaogang LI, Huilan HU, Hao JIANG, Chang ZENG
  • Publication number: 20230299022
    Abstract: A semiconductor device includes a substrate, a gate, a second dielectric layer, and a field plate. The substrate has a first dielectric layer, and a thickness of the first dielectric layer in a first area is greater than a thickness of the first dielectric layer in a second area outside the first area. The gate is located on the substrate and in the first area, the gate includes a first gate structure and a second gate structure, and the second gate structure is formed on a side of the first dielectric layer that is away from the substrate and covers a part of the first dielectric layer. The second dielectric layer covers the gate and the first dielectric layer. The field plate is located on the second dielectric layer and is disposed in both the first area and the second area.
    Type: Application
    Filed: May 25, 2023
    Publication date: September 21, 2023
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Cen TANG, Jin RAO, Tao LIU, Haijun LI, Wei LU, Lingcong LE, Juncai MA, Zhili ZHANG