Abstract: A light-emitting diode includes a semiconductor epitaxial structure which includes a first semiconductor layer, an active layer, and a second semiconductor layer that are stacked in sequence. The second semiconductor layer includes a current spreading layer, which includes a first doped layer doped with a first p-type impurity, a second doped layer doped with the first p-type impurity and a second p-type impurity, and a third doped layer doped with the second p-type impurity. A concentration of the first p-type impurity in the first doped layer is less than or equal to a concentration of the first p-type impurity in the second doped layer. A concentration of the second p-type impurity in the third doped layer is greater than a concentration of the second p-type impurity in the second doped layer. A light-emitting device including the aforesaid light-emitting diode is also provided.

Abstract: A light-emitting device includes a substrate, a semiconductor epitaxial structure, and an etch stop layer. The substrate has a first surface and a second surface opposite to the first surface. The semiconductor epitaxial structure has a side surface that has a roughened structure formed with protrusions, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer disposed on the first surface of the substrate in such order. The etch stop layer is disposed on a surface of the semiconductor epitaxial structure away from the substrate for preventing an etching solution from etching the semiconductor epitaxial structure. A light-emitting package and a light-emitting apparatus are also provided. A method for manufacturing a light-emitting device is also provided.

Abstract: A touch panel and a manufacturing method thereof, and a display device. An insulation layer (4) positioned between a substrate (1) and a polarizer (3) is configured to comprise a silicon nitride layer (41) and a barrier layer (42) positioned at one side of the silicon nitride layer (41) away from the substrate (1). The barrier layer (42) can serve as a covering layer that stops an ammonia gas escaped from the silicon nitride layer (41) from moving to the polarizer (3) so as to prevent fading of the polarizer. The insulation layer (4) is configured to comprise two thin layers, namely a silicon nitride layer (41) and a barrier layer (42).

Abstract: A touch panel and a manufacturing method thereof, and a display device. An insulation layer (4) positioned between a substrate (1) and a polarizer (3) is configured to comprise a silicon nitride layer (41) and a barrier layer (42) positioned at one side of the silicon nitride layer (41) away from the substrate (1). The barrier layer (42) can serve as a covering layer that stops an ammonia gas escaped from the silicon nitride layer (41) from moving to the polarizer (3) so as to prevent fading of the polarizer. The insulation layer (4) is configured to comprise two thin layers, namely a silicon nitride layer (41) and a barrier layer (42).

Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.

Abstract: A method for obtaining a contact resistance of a planar device includes: obtaining a contact resistance of a planar device by using a potential measurement method, in the measurement of the surface potential distribution, the planar device is in a state of current flowing, a certain voltage drop is formed at a junction area of the device; extracting the voltage drop measured through the Kelvin microscope by using a linear fitting method; and dividing the measured voltage drop by the current flowing through the device, thereby accurately calculating the magnitude of the contact resistance at the junction area of the planar device. With the present invention, the contact resistance of the planar device can be precisely measured, which is suitable for the contact resistance measurement experiments of devices such as thin film transistors and diodes.

Abstract: Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see FIG. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making organometallic halide perovskite monocrystalline film, and the like.

Abstract: Embodiments of the present disclosure provide for solar cells including an organometallic halide perovskite monocrystalline film (see FIG. 1.1B), other devices including the organometallic halide perovskite monocrystalline film, methods of making organometallic halide perovskite monocrystalline film, and the like.