Abstract: The present application discloses an LED automobile lamp, which comprises a light source component and a driving component, wherein the light source component is driven to be bright or dark by the driving component; the light source component comprises a heat pipe, a first reflector, a second reflector and an LED patch assembly; the first reflector and the second reflector are respectively sleeved outside the heat pipe; the LED patch assembly consists of a plurality of LED patches which are respectively fixed around the outer wall of the heat pipe and arranged between the first reflector and the second reflector. On the one hand, the light intensity distribution can meet the specified requirements of published relevant laws and regulations; on the other hand, compared with the rear lamp light distribution of the traditional halogen lamp, the LED patch assembly has less distortion and can bring better safety and comfort.

Abstract: The present disclosure provides an exception handling system and method for a space environment, and a detection device. The exception handling system includes: a detection device, an interrupt controller, and a to-be-detected storage device, the to-be-detected storage device includes a statistical unit and registers; the statistical unit is configured to read monitoring data from a specified position of the to-be-detected storage device, generate statistical data based on the monitoring data and reference data written into the specified position in advance, and store the statistical data in the registers; the detection device is configured to read the statistical data from the registers, determine an exception detection result, generate an interrupt signal based on the exception detection result, and send the interrupt signal to the interrupt controller; and the interrupt controller is configured to perform an exception handling based on the interrupt signal.

Abstract: The present application discloses an LED automobile lamp, which comprises a light source component and a driving component, wherein the light source component is driven to be bright or dark by the driving component; the light source component comprises a heat pipe, a first reflector, a second reflector and an LED patch assembly; the first reflector and the second reflector are respectively sleeved outside the heat pipe; the LED patch assembly consists of a plurality of LED patches which are respectively fixed around the outer wall of the heat pipe and arranged between the first reflector and the second reflector. On the one hand, the light intensity distribution can meet the specified requirements of published relevant laws and regulations; on the other hand, compared with the rear lamp light distribution of the traditional halogen lamp, the LED patch assembly has less distortion and can bring better safety and comfort.

Abstract: The present invention provides biological function composite porous polyester microspheres, the polyester forming the polyester microspheres being a mixture of polylactic acid (PLA) and poly (lactic-co-glycolic acid) (PLGA); the PLGA comprises one or more of PLGA, end-group modified PLGA and bonded PLGA; the end-group modified PLGA is amino or carboxyl modified PLGA; and the bonded PLGA is end-group modified PLGA which undergoes an amino or carboxyl chemical bonding method to become loaded with one or more of hyaluronic acid (HA), collagen (Col) and cytokines. The microspheres prepared in the present invention are round in shape, have a uniform particle size distribution, have high and adjustable porosity, and simultaneously have high drug loading capacity and encapsulation efficiency.

Abstract: An in-situ replaceable LED car headlight and a design method, comprising a lamp body shell, a light source assembly provided with LED lamps, a driving assembly, and a fan, wherein the light source assembly is arranged at a head of the lamp body shell, and the driving assembly is arranged at a tail of the lamp body shell; a middle part of the lamp body shell is provided with a central installation part for accommodating the fan, and the fan is installed between the light source assembly and the driving assembly; the driving assembly is electrically connected with the fan by adopting a flexible board connecting wire. A structure in which the fan is arranged in the central position is adopted, so that the fan can be placed in the part with the largest internal space of the lamp body within the range limited by laws and regulations.

Abstract: A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.

Abstract: In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns.

Abstract: In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns.

Abstract: A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.