Abstract: An in-situ replaceable LED car headlight and a design method, comprising a lamp body shell, a light source assembly provided with LED lamps, a driving assembly, and a fan, wherein the light source assembly is arranged at a head of the lamp body shell, and the driving assembly is arranged at a tail of the lamp body shell; a middle part of the lamp body shell is provided with a central installation part for accommodating the fan, and the fan is installed between the light source assembly and the driving assembly; the driving assembly is electrically connected with the fan by adopting a flexible board connecting wire. A structure in which the fan is arranged in the central position is adopted, so that the fan can be placed in the part with the largest internal space of the lamp body within the range limited by laws and regulations.

Abstract: An information processing method and apparatus, a terminal, and a storage medium. The information processing method comprises: determining first content in response to a first operation event of a first control in a first document (S11); and adding the first content to the first document on the basis of content information and type information of the first content (S12). The type information comprises first type information and/or second type information, the second type information having an association with the first type information. In the described method, first content can be added to a first document according to content information and type information of the first content, so as to distinguish different ways of adding the first content.

Abstract: Embodiments of the present disclosure relate to a permission setting method and apparatus, a device, and a medium. The method includes: displaying a permission customization control, in response to a trigger operation on a permission setting object of task information, the permission setting object including a first information object and/or a second information object, the second information object being subordinate to the first information object; displaying a permission editing interface, in response to a trigger operation on the permission customization control, and receiving customization permission information via the permission editing interface; and displaying the customization permission information corresponding to the permission setting object. Therefore, a hierarchy structure based on the task information satisfies a setting need for content-based permission customization, and improves a permission management efficiency.

Abstract: A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.

Abstract: In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns.

Abstract: In one embodiment, a Schottky diode is formed on a doped region having a thickness less than about eighteen microns.

Abstract: A Schottky diode capable of sustaining a voltage of greater than about 250 volts and a method for its manufacture. An epitaxial layer of N-type conductivity is disposed on a semiconductor substrate of N-type conductivity. A guard ring of P-type conductivity extends into the epitaxial layer from its surface. A stacked structure is formed on a portion of the guard ring and a portion of the epitaxial layer. The stacked structure includes a layer of semi-insulating semiconductor material disposed on a layer of dielectric material. A first metal layer is formed on the portion of the epitaxial layer adjacent a first side of the stacked structure and on a first portion of the stacked structure. A second metal layer is formed on the portion of the epitaxial layer adjacent a second side of the stacked structure and on a second portion of the stacked structure.