Abstract: A semiconductor laser is provided, and a method of producing 600-1100 laser light, and a method of making a semiconductor laser is provided. The semiconductor laser includes a quantum well layer with a spectral profile of peak wavelength ?g, a laser gain region, a window region and an optical feedback region. The laser gain region is configured to accept a current injected into the quantum well layer. The window region includes a light emitting facet, wherein the window region is not configured to receive current-injection into the quantum well layer. The optical feedback region has a spectral profile of peak wavelength ?of, and ?of>?g.