Patents by Inventor Lingling Pu
Lingling Pu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240062362Abstract: An improved systems and methods for generating a synthetic defect image are disclosed. An improved method for generating a synthetic defect image comprises acquiring a machine learning-based generator model; providing a defect-free inspection image and a defect attribute combination as inputs to the generator model; and generating by the generator model, based on the defect-free inspection image, a predicted synthetic defect image with a predicted defect that accords with the defect attribute combination.Type: ApplicationFiled: December 8, 2021Publication date: February 22, 2024Applicant: ASML Netherlands B.V.Inventors: Zhe WANG, Liangjiang YU, Lingling PU
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Publication number: 20240046620Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.Type: ApplicationFiled: August 3, 2023Publication date: February 8, 2024Inventors: Wentian ZHOU, Liangjiang YU, Teng WANG, Lingling PU, Wei FANG
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Patent number: 11842420Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.Type: GrantFiled: April 15, 2022Date of Patent: December 12, 2023Assignee: ASML Netherlands B.V.Inventors: Wei Fang, Lingling Pu
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Patent number: 11769317Abstract: Disclosed herein is a method of automatically obtaining training images to train a machine learning model that improves image quality. The method may comprise analyzing a plurality of patterns of data relating to a layout of a product to identify a plurality of training locations on a sample of the product to use in relation to training the machine learning model. The method may comprise obtaining a first image having a first quality for each of the plurality of training locations, and obtaining a second image having a second quality for each of the plurality of training locations, the second quality being higher than the first quality. The method may comprise using the first image and the second image to train the machine learning model.Type: GrantFiled: December 18, 2019Date of Patent: September 26, 2023Assignee: ASML Netherlands B.V.Inventors: Wentian Zhou, Liangjiang Yu, Teng Wang, Lingling Pu, Wei Fang
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Patent number: 11756187Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.Type: GrantFiled: January 3, 2022Date of Patent: September 12, 2023Assignee: ASML Netherlands B.V.Inventors: Lingling Pu, Wei Fang, Nan Zhao, Wentian Zhou, Teng Wang, Ming Xu
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Patent number: 11694312Abstract: An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a first image and a second image of multiple stacked layers of a sample that are taken with a first focal point and a second focal point, respectively, associating a first segment of the first image with a first layer among the multiple stacked layers and associating a second segment of the second image with a second layer among the multiple stacked layers, updating the first segment based on a first reference image corresponding to the first layer and updating the second segment based on a second reference image corresponding to the second layer, and combining the updated first segment and the updated second segment to generate a combined image including the first layer and the second layer.Type: GrantFiled: May 5, 2021Date of Patent: July 4, 2023Assignee: ASML Netherlands B.V.Inventors: Wei Fang, Ruochong Fei, Lingling Pu, Wentian Zhou, Liangjiang Yu, Bo Wang
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Publication number: 20230117237Abstract: An improved apparatus and method for extracting pattern contour information from an inspection image in a multiple charged-particle beam inspection system are disclosed. An improved method for extracting pattern contour information from an inspection image comprises identifying, from an inspection image obtained from a charged-particle beam inspection system, a first pattern and a second pattern that partially overlap in the inspection image. The method also comprises generating a first separation image by removing an image area corresponding to the second pattern from the inspection image. The first separation image includes the first pattern of which a first part is removed when removing the image area corresponding to the second pattern. The method also comprises updating the first separation image to include image data representing the removed first part of the first pattern based on a first reference image corresponding to the first pattern.Type: ApplicationFiled: January 27, 2021Publication date: April 20, 2023Applicant: ASML Netherlands B.V.Inventors: Lingling PU, Wei FANG
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Publication number: 20230076943Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to he added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.Type: ApplicationFiled: November 10, 2022Publication date: March 9, 2023Applicant: ASML Netherlands B.V.Inventors: Lingling PU, Wei FANG, Zhong-wei CHEN
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Publication number: 20230012946Abstract: A system and method for defect inspection using voltage contrast in a charged particle system are provided. Some embodiments of the system and method include positioning the stage at a first position to enable a first beam of the plurality of beams to scan a first surface area of the wafer at a first time to generate a first image associated with the first surface area; positioning the stage at a second position to enable a second beam of the plurality of beams to scan the first surface area at a second time to generate a second image associated with the first surface area; and comparing the first image with the second image to enable detecting whether a defect is identified in the first surface area of the wafer.Type: ApplicationFiled: December 17, 2020Publication date: January 19, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Wei FANG, Zhengwei ZHOU, Lingling PU
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Publication number: 20220404712Abstract: A method for training a machine learning model to generate a predicted measured image, the method including obtaining (a) an input target image associated with a reference design pattern, and (b) a reference measured image associated with a specified design pattern printed on a substrate, wherein the input target image and the reference measured image are non-aligned images; and training, by a hardware computer system and using the input target image, the machine learning model to generate a predicted measured image.Type: ApplicationFiled: October 1, 2020Publication date: December 22, 2022Applicant: ASML NETHERLANDS B.VInventors: Qiang ZHANG, Yunbo GUO, Yu CAO, Jen-Shiang WANG, Yen-Wen LU, Danwu CHEN, Pengcheng YANG, Haoyi LIANG, Zhichao CHEN, Lingling PU
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Patent number: 11527405Abstract: Systems and methods for in-die metrology using target design patterns are provided. These systems and methods include selecting a target design pattern based on design data representing the design of an integrated circuit, providing design data indicative of the target design pattern to enable design data derived from the target design pattern to be added to second design data, wherein the second design data is based on the first design data. Systems and methods can further include causing structures derived from the second design data to be printed on a wafer, inspecting the structures on the wafer using a charged-particle beam tool, and identifying metrology data or process defects based on the inspection. In some embodiments the systems and methods further include causing the charged-particle beam tool, the second design data, a scanner, or photolithography equipment to be adjusted based on the identified metrology data or process defects.Type: GrantFiled: December 30, 2019Date of Patent: December 13, 2022Assignee: ASML Netherlands B.V.Inventors: Lingling Pu, Wei Fang, Zhong-wei Chen
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Publication number: 20220319805Abstract: Systems and methods for image enhancement are disclosed. A method for enhancing an image may include receiving records of a performance metric for beams of the multi-beam system in an imaging process, each record associated with a beam. The method may also include determining whether an abnormality of a beam occurs based on a baseline value determined using a portion of the records. The method may further include providing an abnormality indication in response to the determination that the abnormality has occurred.Type: ApplicationFiled: August 20, 2020Publication date: October 6, 2022Applicant: ASML Netherlands B.V.Inventors: Wei FANG, Lingling PU
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Publication number: 20220301811Abstract: An improved apparatus and method for enhancing an image, and more particularly an apparatus and method for enhancing an image through cross-talk cancellation in a multiple charged-particle beam inspection are disclosed. An improved method for enhancing an image includes acquiring a first image signal of a plurality of image signals from a detector of a multi-beam inspection system. The first image signal corresponds to a detected signal from a first region of the detector on which electrons of a first secondary electron beam and of a second secondary electron beam are incident. The method includes reducing, from the first image signal, cross-talk contamination originating from the second secondary electron beam using a relationship between the first image signal and beam intensities associated with the first secondary electron beam and the second secondary electron beam. The method further includes generating a first image corresponding to first secondary electron beam after reduction.Type: ApplicationFiled: August 20, 2020Publication date: September 22, 2022Inventors: Wei FANG, Lingling PU, Bo WANG, Zhonghua DONG, Yongxin WANG
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Publication number: 20220245840Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.Type: ApplicationFiled: April 15, 2022Publication date: August 4, 2022Inventors: Wei FANG, Lingling PU
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Publication number: 20220237759Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.Type: ApplicationFiled: January 3, 2022Publication date: July 28, 2022Applicant: ASML Netherlands B.V.Inventors: Lingling PU, Wei FANG, Nan ZHAO, Wentian ZHOU, Teng WANG, Ming XU
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Patent number: 11308635Abstract: A method for aligning a wafer image with a reference image, comprising: searching for a targeted reference position on the wafer image for aligning the wafer image with the reference image; and in response to a determination that the targeted reference position does not exist: defining a current lock position and an area that encloses the current lock position on the wafer image; computing an alignment score of the current lock position; comparing the alignment score of the current lock position with stored alignment scores of positions previously selected in relation to aligning the wafer image with the reference image; and aligning the wafer image with the reference image based on the comparison.Type: GrantFiled: October 18, 2019Date of Patent: April 19, 2022Assignee: ASML Netherlands B.V.Inventors: Wei Fang, Lingling Pu
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Publication number: 20220068590Abstract: Systems and methods for irradiating a sample with a charged-particle beam are disclosed. The charged-particle beam system may comprise a stage configured to hold a sample and is movable in at least one of X-Y-Z axes. The charged-particle beam system may further comprise a position sensing system to determine a lateral and vertical displacement of the stage, and a beam deflection controller configured to apply a first signal to deflect a primary charged-particle beam incident on the sample to at least partly compensate for the lateral displacement, and to apply a second signal to adjust a focus of the deflected charged-particle beam incident on the sample to at least partly compensate for the vertical displacement of the stage. The first and second signals may comprise an electrical signal having a high bandwidth in a range of 10 kHz to 50 kHz, and 50 kHz to 200 kHz, respectively.Type: ApplicationFiled: December 19, 2019Publication date: March 3, 2022Inventors: Ying LUO, Zhonghua DONG, Xuehui YIN, Long DI, Nianpei DENG, Wei FANG, Lingling PU, Ruochong FEI, Bohang ZHU, Yu LIU
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Patent number: 11216938Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.Type: GrantFiled: August 28, 2019Date of Patent: January 4, 2022Assignee: ASML Netherlands B.V.Inventors: Lingling Pu, Wei Fang, Nan Zhao, Wentian Zhou, Teng Wang, Ming Xu
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Publication number: 20210350507Abstract: An improved method and apparatus for enhancing an inspection image in a charged-particle beam inspection system. An improved method for enhancing an inspection image comprises acquiring a first image and a second image of multiple stacked layers of a sample that are taken with a first focal point and a second focal point, respectively, associating a first segment of the first image with a first layer among the multiple stacked layers and associating a second segment of the second image with a second layer among the multiple stacked layers, updating the first segment based on a first reference image corresponding to the first layer and updating the second segment based on a second reference image corresponding to the second layer, and combining the updated first segment and the updated second segment to generate a combined image including the first layer and the second layer.Type: ApplicationFiled: May 5, 2021Publication date: November 11, 2021Inventors: Wei FANG, Ruochong FEI, Lingling PU, Wentian ZHOU, Liangjiang YU, Bo WANG
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Patent number: 11126089Abstract: A method for determining corrections to features of a mask. The method includes obtaining (i) a pattern group for a design layout, and (ii) defect inspection data of a substrate imaged using the mask used in the patterning process for the design layout; determining, based on the defect inspection data, a defect map associated with the pattern group, wherein the defect map comprises locations of assist features having a relatively higher probability of being printed on the substrate compared to other patterns of the design layout; and determining, via simulating an optical proximity correction process using data associated with the defect map, corrections to the features of the mask.Type: GrantFiled: April 14, 2020Date of Patent: September 21, 2021Assignee: ASML Netherlands B.V.Inventors: Wei Fang, Lingling Pu, Zhichao Chen, Haili Zhang, Pengcheng Zhang